Inventor
HSU KAI-CHUN
TW17 patents
⚠️ This page may combine multiple inventors who share the name “HSU KAI-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS11222915B2Jan 11, 2022
Pad structure for front side illuminated image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US10833119B2Nov 10, 2020
Pad structure for front side illuminated image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9627326B2Apr 18, 2017
Method for forming alignment marks and structure of same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10074612B2Sep 11, 2018
Method for forming alignment marks and structure of same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11996433B2May 28, 2024
Pad structure for front side illuminated image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11837622B2Dec 5, 2023
Image sensor comprising polysilicon gate electrode and nitride hard mask
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11444116B2Sep 13, 2022
Method for forming image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11322540B2May 3, 2022
Pad structure for front side illuminated image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12557423B2Feb 17, 2026
Image-sensor structure and method of making thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12514009B2Dec 30, 2025
Isolation structure configured to reduce cross talk in image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10103287B2Oct 16, 2018
Semiconductor arrangement and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10879305B2Dec 29, 2020
Image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10204960B2Feb 12, 2019
Method of forming polysilicon gate structure in image sensor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12550473B2Feb 10, 2026
Back-trench isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49