Inventor

CATABAY WILBUR G

US64 patents

⚠️ This page may combine multiple inventors who share the name “CATABAY WILBUR G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CATABAY WILBUR G

LSI LOGIC CORP

Method of forming integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines

Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures

Process for treating damaged surfaces of low dielectric constant organo silicon oxide insulation material to inhibit moisture absorption

Process for planarizing upper surface of damascene wiring structure for integrated circuit structures

Process to prevent stress cracking of dielectric films on semiconductor wafers

Plasma clean with hydrogen gas

Etch process selective to cobalt silicide for formation of integrated circuit structures

Multi-step process for forming a barrier film for use in copper layer formation

Process for treating porous low k dielectric material in damascene structure to form a non-porous dielectric diffusion barrier on etched via and trench surfaces in the porous low k dielectric material

Process for forming low K dielectric material between metal lines

Low k dielectric composite layer for intergrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning

Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure

Method of making a barrier layer for via or contact opening of integrated circuit structure

Process for forming improved cobalt silicide layer on integrated circuit structure using two capping layers

Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures

Via and metal line interface capable of reducing the incidence of electro-migration induced voids

Process for forming composite of barrier layers of dielectric material to inhibit migration of copper from copper metal interconnect of integrated circuit structure into adjacent layer of low k dielectric material

Composite low dielectric constant film for integrated circuit structure

Metal-filled via/contact opening with thin barrier layers in integrated circuit structure for fast response, and process for making same

Method for improvement of TiN CVD film quality

Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures

Dual layer barrier film techniques to prevent resist poisoning

Method and structure for forming dielectric layers having reduced dielectric constants

Low dielectric constant silicon oxide-based dielectric layer for integrated circuit structures having improved compatibility with via filler materials, and method of making same

Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning

Process for forming trenches and vias in layers of low dielectric constant carbon-doped silicon oxide dielectric material of an integrated circuit structure

Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps

Method to obtain a low resistivity and conformity chemical vapor deposition titanium film

Method to obtain a low resistivity and conformity chemical vapor deposition titanium film

Anti-reflective coatings for use at 248 nm and 193 nm

Method for eliminating peeling at end of semiconductor substrate in metal organic chemical vapor deposition of titanium nitride

Electro chemical mechanical polishing method

Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for integrated circuit structure

Ultra low dielectric constant thin film

Low k dielectric composite layer for integrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning

Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for intergrated circuit structure

Diamond barrier layer

Process for forming integrated circuit structure comprising layer of low k dielectric material having antireflective properties in an upper surface

Diamond barrier layer

Forming copper interconnects with Sn coatings

Interconnect integration

Method of forming a layer of material on a wafer

Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures

LSI CORP

Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures

Multi-step process for forming a barrier film for use in copper layer formation

Multi-step process for forming a barrier film for use in copper layer formation

Dual layer barrier film techniques to prevent resist poisoning

Electro chemical mechanical polishing method and device for planarizing semiconductor surfaces

Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures

Planarization with reduced dishing