Inventor

HILL RICHARD J

US74 patents

⚠️ This page may combine multiple inventors who share the name “HILL RICHARD J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HILL RICHARD J

MICRON TECHNOLOGY INC

Arrays of elevationally-extending strings of memory cells and methods of forming memory arrays

Memory arrays, and methods of forming memory arrays

Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies

Method used in forming integrated circuitry

Electronic devices comprising a dielectric material, and related systems and methods

Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies

Memory arrays

Three-dimensional dynamic random-access memory array

Memory arrays

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Integrated assemblies comprising sense-amplifier-circuitry and wordline-driver-circuitry under memory cells of a memory array

Memory arrays

Capacitance reduction in a semiconductor device

Methods of forming a pattern

Arrays of elevationally-extending strings of memory cells and methods of forming memory arrays

Electronic devices comprising adjoining oxide materials and related systems

Memory arrays, and methods of forming memory arrays

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies

Memory arrays, and methods of forming memory arrays

Methods of forming apparatuses including air gaps between conductive lines and related apparatuses, memory devices, and electronic systems

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies

Memory arrays

Integrated assemblies comprising sense-amplifier-circuitry and wordline-driver-circuitry under memory cells of a memory array

Electronic devices comprising adjoining oxide materials and related systems

Memory arrays, and methods of forming memory arrays

Electronic devices comprising multilevel bitlines, and related methods and systems

Microelectronic devices including isolation structures protruding into upper pillar portions, and related methods and systems

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material

Memory array and a method used in forming a memory array

Integrated assemblies, and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Microelectronic devices including isolation structures protruding into upper pillar portions, and related methods and systems

Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assemblies

Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material

Semiconductor devices comprising conductive patterns of varying dimensions and related systems

LODESTAR LICENSING GROUP LLC

Microelectronic devices including pillars with partially-circular upper portions and circular lower portions, and related methods

Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assemblies

HILL RICHARD J

Styptic composition

GEN ELECTRIC

Method of electroding a poly(vinylidene fluoride) solid