Inventor

ROBERTS MARTIN C

US57 patents

⚠️ This page may combine multiple inventors who share the name “ROBERTS MARTIN C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ROBERTS MARTIN C

MICRON TECHNOLOGY INC

Spacers used to form isolation trenches with improved corners

Method of forming a narrow self-aligned, annular opening in a masking layer

Memory arrays

Passivation of sidewalls of a word line stack

Isolation structure of a shallow semiconductor device trench

Spacers used to form isolation trenches with improved corners

Method for making a fillet for integrated circuit metal plug

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

Method for forming an integrated circuit interconnect using a dual poly process

Method for forming an integrated circuit interconnect using a dual poly process

Method for forming an integrated circuit interconnect using a dual poly process

Method of trench isolation using spacers to form isolation trenches with protected corners

Method of forming buried contact between polysilicon gate and diffusion area

Integrated assemblies and methods of forming integrated assemblies

Memory arrays

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

Integrated structures

Dual poly integrated circuit interconnect

Method of making a resistor

Methods for reducing encroachment of the field oxide into the active area on a silicon integrated circuit

Buried contact between polysilicon gate and diffusion area

Memory arrays

Memory arrays

Memory arrays comprising memory cells

Memory arrays

Integrated assemblies and methods of forming integrated assemblies

Memory arrays, and methods of forming memory arrays

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Integrated structures

Memory arrays

Memory arrays

Memory arrays comprising memory cells

Integrated structures

Integrated structures

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Integrated assemblies and methods of forming integrated assemblies

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Memory arrays, and methods of forming memory arrays

Integrated assemblies and methods of forming integrated assemblies

Memory arrays, and methods of forming memory arrays

Memory arrays

Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor

Integrated assemblies and methods of forming integrated assemblies

MICRON SEMICONDUCTOR INC

Semiconductor device

Semiconductor wafer processing method of forming channel stops and method of forming SRAM circuitry

Method of forming a low resistive current path between a buried contact and a diffusion region

Method of forming electrical contact between a field effect transistor gate and a remote active area

ZAHURAK JOHN K

Circuit structures, memory circuitry, and methods