Inventor

Gandhi Ramanathan

US25 patents

⚠️ This page may combine multiple inventors who share the name “Gandhi Ramanathan”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

Gandhi Ramanathan

MICRON TECHNOLOGY INC

Devices including vertical transistors, and related methods and electronic systems

Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices

Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors

Devices including heterogeneous channels, and related memory devices, electronic systems, and methods

Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors

Memory devices including oxide semiconductor

Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies

Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices

Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies

Assemblies which include ruthenium-containing conductive gates

Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material

Transistors including heterogeneous channels

Methods of forming a semiconductor device

Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies

Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors

Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies

Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material

Device including a vertical transistor having a large band gap channel material and void spaces adjacent gate electrodes, and related methods and systems

Assemblies which include ruthenium-containing conductive gates

Transistors and arrays of elevationally-extending strings of memory cells

Memory cell and method used in forming a memory cells

Memory cell having programmable material comprising at least two regions comprising SiNx

LODESTAR LICENSING GROUP LLC

Assemblies which include ruthenium-containing conductive gates

Transistors and arrays of elevationally-extending strings of memory cells

KARDA KAMAL M

Memory devices including void spaces between transistor features, and related semiconductor devices and electronic systems