Inventor
LOY DESMOND JIA JUN
SG26 patents
Patents
26 patentsUS10847720B1Nov 24, 2020
Non-volatile memory elements with filament confinement
GLOBALFOUNDRIES SG PTE LTD7 citations84
US11793004B2Oct 17, 2023
Resistive random access memory devices
GLOBALFOUNDRIES SG PTE LTD3 citations73
US11335852B2May 17, 2022
Resistive random access memory devices
GLOBALFOUNDRIES SG PTE LTD2 citations73
US11217747B2Jan 4, 2022
Memory devices and methods of forming memory devices
GLOBALFOUNDRIES SG PTE LTD2 citations73
US11050426B1Jun 29, 2021
Logic gate devices and methods of forming a logic gate device
GLOBALFOUNDRIES SG PTE LTD2 citations73
US12387785B2Aug 12, 2025
Structures for three-terminal memory cells
GLOBALFOUNDRIES SG PTE LTD0 citations62
US12363892B2Jul 15, 2025
Non-volatile memory elements with one-time or multiple-time programmability
GLOBALFOUNDRIES SG PTE LTD0 citations62
US12349608B2Jul 1, 2025
Memory devices and methods of making the same
GLOBALFOUNDRIES SG PTE LTD0 citations62
US12201039B2Jan 14, 2025
Non-volatile memory device with filament confinement
GLOBALFOUNDRIES SG PTE LTD0 citations62
US12101944B2Sep 24, 2024
Semiconductor memory devices
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11844292B2Dec 12, 2023
Memory devices having an electrode with tapered sides
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11502250B2Nov 15, 2022
Memory devices and methods of forming memory devices
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11476303B2Oct 18, 2022
Multi-level cell configurations for non-volatile memory elements in a bitcell
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11462552B2Oct 4, 2022
Semiconductor devices with memory cells
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11444125B2Sep 13, 2022
Memory devices and methods of forming memory devices
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11398525B2Jul 26, 2022
Resistive memory elements having conductive islands embedded within the switching layer
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11393979B2Jul 19, 2022
Non-volatile memory elements with filament confinement
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11302702B2Apr 12, 2022
Non-volatile memory elements with one-time or multiple-time programmability
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11211555B2Dec 28, 2021
Memory device and a method for forming the memory device
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11069743B1Jul 20, 2021
Non-volatile memory elements with a multi-level cell configuration
GLOBALFOUNDRIES SG PTE LTD0 citations62
US12490660B2Dec 2, 2025
Structures for three-terminal memory cells
GLOBALFOUNDRIES SG PTE LTD0 citations52
US12193243B2Jan 7, 2025
Lateral multi-bit memory devices and methods of making the same
GLOBALFOUNDRIES SG PTE LTD0 citations52
US11991938B2May 21, 2024
Memory devices and methods of forming memory devices
GLOBALFOUNDRIES SG PTE LTD0 citations52
US11152380B2Oct 19, 2021
Memory device and a method for forming the memory device
GLOBALFOUNDRIES SG PTE LTD0 citations52
US11349071B2May 31, 2022
Memory device and a method for forming the memory device
GLOBALFOUNDRIES SG PTE LTD0 citations51
US10312442B2Jun 4, 2019
Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers
GLOBALFOUNDRIES SG PTE LTD0 citations50