Inventor

LAI BO-YU

TW35 patents

⚠️ This page may combine multiple inventors who share the name “LAI BO-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAI BO-YU

TAIWAN SEMICONDUCTOR MFG CO LTD

Self-aligned gate hard mask and method forming same

Self-aligned contact air gap formation

Semiconductor structure and method for forming the same

Conformal transfer doping method for fin-like field effect transistor

Forming transistor by selectively growing gate spacer

Semiconductor structure with fin structure and wire structure and method for forming the same

Self-aligned contact air gap formation

Conformal transfer doping method for fin-like field effect transistor

Air gap formation between gate spacer and epitaxy structure

Air gap formation between gate spacer and epitaxy structure

Low-k gate spacer and methods for forming the same

Low-k gate spacer and methods for forming the same

Structure of fin feature and method of making same

Conformal transfer doping method for Fin-like field effect transistor

Semiconductor device with leakage current suppression and method for forming the same

Fin field effect transistor (FinFET) device structure

Conformal transfer doping method for fin-like field effect transistor

Self-aligned contact air gap formation

Semiconductor device with leakage current suppression and method for forming the same

Transistors with recessed silicon cap and method forming same

Air gap formation between gate spacer and epitaxy structure

Semiconductor device with tunable channel layer usage and methods of fabrication thereof

Low-k gate spacer and methods for forming the same

Transistors with recessed silicon cap and method forming same

Self-aligned gate hard mask and method forming same

Forming transistor by selectively growing gate spacer

Conductive feature of semiconductor device and method of forming same

Conformal transfer doping method for fin-like field effect transistor

Air gap formation between gate spacer and epitaxy structure

Fin field effect transistor (finFET) device structure and method for forming the same

Self-aligned gate hard mask and method forming same

Forming transistor by selectively growing gate spacer

Semiconductor devices with a source/drain barrier layer and methods of manufacture

REALTEK SEMICONDUCTOR CORP

Media docking device and media docking method

Media docking device and media transfer method