Inventor
LEE Kai-Hsuan
TW74 patents
Patents
50 patentsUS10062784B1Aug 28, 2018
Self-aligned gate hard mask and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US9997631B2Jun 12, 2018
Methods for reducing contact resistance in semiconductors manufacturing process
TAIWAN SEMICONDUCTOR MFG CO LTD31 citations94
US11456383B2Sep 27, 2022
Semiconductor device having a contact plug with an air gap spacer
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11189706B2Nov 30, 2021
FinFET structure with airgap and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10985167B2Apr 20, 2021
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10971408B2Apr 6, 2021
Contact air gap formation and structures thereof
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10923565B2Feb 16, 2021
Self-aligned contact air gap formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10529725B2Jan 7, 2020
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10483266B2Nov 19, 2019
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10283624B1May 7, 2019
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10141231B1Nov 27, 2018
FinFET device with wrapped-around epitaxial structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US10037923B1Jul 31, 2018
Forming transistor by selectively growing gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US11901408B2Feb 13, 2024
Self-aligned contact air gap formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11856743B2Dec 26, 2023
Flexible merge scheme for source/drain epitaxy regions
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11855097B2Dec 26, 2023
Air gap formation between gate spacer and epitaxy structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11735641B2Aug 22, 2023
FinFET structure with airgap and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11682675B2Jun 20, 2023
Fin field-effect transistor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11600520B2Mar 7, 2023
Air gaps in memory array structures
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11456295B2Sep 27, 2022
Air gap formation between gate spacer and epitaxy structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11043425B2Jun 22, 2021
Methods of reducing parasitic capacitance in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10833170B2Nov 10, 2020
Low-k gate spacer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10777504B2Sep 15, 2020
Interconnect structure for semiconductor device and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10515896B2Dec 24, 2019
Interconnect structure for semiconductor device and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10490650B2Nov 26, 2019
Low-k gate spacer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10163728B2Dec 25, 2018
Semiconductor device having a stacked fin structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9865595B1Jan 9, 2018
FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9449882B1Sep 20, 2016
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US12598796B2Apr 7, 2026
High aspect ratio gate structure formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12532723B2Jan 20, 2026
Scalable patterning through layer expansion process and resulting structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12484292B2Nov 25, 2025
Methods of reducing parasitic capacitance in semicondutor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12433008B2Sep 30, 2025
FinFET structure with airgap and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12376357B2Jul 29, 2025
Fin field-effect transistor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12165925B2Dec 10, 2024
Fin field effect transistor having airgap and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12119259B2Oct 15, 2024
Transistor gate contacts and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12087621B2Sep 10, 2024
Air gaps in memory array structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12009263B2Jun 11, 2024
Methods of reducing parasitic capacitance in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12002863B2Jun 4, 2024
Semiconductor device with air-gap spacers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11968838B2Apr 23, 2024
Air gaps in memory array structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854868B2Dec 26, 2023
Scalable patterning through layer expansion process and resulting structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854907B2Dec 26, 2023
Contact air gap formation and structures thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11824101B2Nov 21, 2023
High aspect ratio gate structure formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11776855B2Oct 3, 2023
Fin field effect transistor having airgap and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11777004B2Oct 3, 2023
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11610841B2Mar 21, 2023
Interconnect structure for semiconductor device and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11557517B2Jan 17, 2023
Fin field effect transistor having airgap and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11289583B2Mar 29, 2022
High aspect ratio gate structure formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11152486B2Oct 19, 2021
FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11081395B2Aug 3, 2021
Fin field effect transistor having air gap and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12543560B2Feb 3, 2026
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12464774B2Nov 4, 2025
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
Showing the top 50 of 74 patents by PatentIndex Score.