Inventor
HAZBUN RAMSEY
US21 patents
Patents
21 patentsUS12521714B2Jan 13, 2026
Microfluidic channels in a substrate with a surface covered by a layer stack
GLOBALFOUNDRIES US INC0 citations62
US12457823B2Oct 28, 2025
Photodetector structure with air gap and related methods
GLOBALFOUNDRIES US INC0 citations62
US12342626B2Jun 24, 2025
Switches in bulk substrate
GLOBALFOUNDRIES US INC0 citations62
US12310124B2May 20, 2025
Photodiodes
GLOBALFOUNDRIES US INC0 citations62
US11949034B2Apr 2, 2024
Photodetector with dual doped semiconductor material
GLOBALFOUNDRIES US INC1 citations62
US11664470B2May 30, 2023
Photodiode with integrated, self-aligned light focusing element
GLOBALFOUNDRIES US INC0 citations62
US11605649B2Mar 14, 2023
Switches in bulk substrate
GLOBALFOUNDRIES US INC0 citations62
US11424377B2Aug 23, 2022
Photodiode with integrated, light focusing element
GLOBALFOUNDRIES US INC0 citations62
US11374040B1Jun 28, 2022
Pixel arrays including heterogenous photodiode types
GLOBALFOUNDRIES US INC0 citations62
US11322639B2May 3, 2022
Avalanche photodiode
GLOBALFOUNDRIES US INC1 citations62
US11195925B2Dec 7, 2021
Heterojunction bipolar transistors
GLOBALFOUNDRIES US INC0 citations62
US12131904B2Oct 29, 2024
Semiconductor structure with semiconductor-on-insulator region and method
GLOBALFOUNDRIES US INC0 citations61
US12040252B2Jul 16, 2024
Microfluidic channels sealed with directionally-grown plugs
GLOBALFOUNDRIES US INC0 citations61
US11515158B2Nov 29, 2022
Semiconductor structure with semiconductor-on-insulator region and method
GLOBALFOUNDRIES US INC0 citations61
US11195715B2Dec 7, 2021
Epitaxial growth constrained by a template
GLOBALFOUNDRIES US INC1 citations61
US12317562B2May 27, 2025
High electron mobility transistors having barrier liners and integration schemes
GLOBALFOUNDRIES US INC0 citations60
US11842940B2Dec 12, 2023
Semiconductor structure having a thermal shunt below a metallization layer and integration schemes
GLOBALFOUNDRIES US INC0 citations60
US11569170B2Jan 31, 2023
Substrate with a buried conductor under an active region for enhanced thermal conductivity and RF shielding
GLOBALFOUNDRIES US INC0 citations60
US12400927B2Aug 26, 2025
High-mobility-electron transistors having heat dissipating structures
GLOBALFOUNDRIES US INC0 citations59
US12342555B1Jun 24, 2025
Bipolar transistor
GLOBALFOUNDRIES US INC1 citations53
US12362172B2Jul 15, 2025
Integration of compound-semiconductor-based devices and silicon-based devices
GLOBALFOUNDRIES US INC0 citations50