Inventor
DERRICKSON ALEXANDER M
US24 patents
Patents
24 patentsUS11843044B2Dec 12, 2023
Bipolar transistor structure on semiconductor fin and methods to form same
GLOBALFOUNDRIES US INC2 citations73
US12349375B2Jul 1, 2025
Lateral bipolar transistors with gate structure aligned to extrinsic base
GLOBALFOUNDRIES US INC0 citations62
US11949004B2Apr 2, 2024
Lateral bipolar transistors with gate structure aligned to extrinsic base
GLOBALFOUNDRIES US INC0 citations62
US11908898B2Feb 20, 2024
Lateral bipolar transistor structure with base layer of varying horizontal width and methods to form same
GLOBALFOUNDRIES US INC0 citations62
US11862717B2Jan 2, 2024
Lateral bipolar transistor structure with superlattice layer and method to form same
GLOBALFOUNDRIES US INC0 citations62
US11855197B2Dec 26, 2023
Vertical bipolar transistors
GLOBALFOUNDRIES US INC0 citations62
US11837653B2Dec 5, 2023
Lateral bipolar junction transistor including a stress layer and method
GLOBALFOUNDRIES US INC0 citations62
US11837460B2Dec 5, 2023
Lateral bipolar transistor
GLOBALFOUNDRIES US INC0 citations62
US11799021B2Oct 24, 2023
Lateral bipolar transistor structure with marker layer for emitter and collector
GLOBALFOUNDRIES US INC0 citations62
US11804542B2Oct 31, 2023
Annular bipolar transistors
GLOBALFOUNDRIES US INC0 citations61
US11424349B1Aug 23, 2022
Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices
GLOBALFOUNDRIES US INC0 citations61
US11152496B2Oct 19, 2021
IC structure base and inner E/C material on raised insulator, and methods to form same
GLOBALFOUNDRIES US INC1 citations61
US12495623B2Dec 9, 2025
Lateral phototransistor
GLOBALFOUNDRIES US INC0 citations60
US11916109B2Feb 27, 2024
Bipolar transistor structures with base having varying horizontal width and methods to form same
GLOBALFOUNDRIES US INC0 citations60
US11588044B2Feb 21, 2023
Bipolar junction transistor (BJT) structure and related method
GLOBALFOUNDRIES US INC0 citations59
US11575029B2Feb 7, 2023
Lateral bipolar junction transistor and method
GLOBALFOUNDRIES US INC1 citations59
US11888050B2Jan 30, 2024
Lateral bipolar transistor structure with inner and outer spacers and methods to form same
GLOBALFOUNDRIES US INC0 citations57
US12342555B1Jun 24, 2025
Bipolar transistor
GLOBALFOUNDRIES US INC1 citations53
US12176426B2Dec 24, 2024
Bipolar transistor structure on semiconductor fin and methods to form same
GLOBALFOUNDRIES US INC0 citations52
US11881395B2Jan 23, 2024
Bipolar transistor structure on semiconductor fin and methods to form same
GLOBALFOUNDRIES US INC0 citations52
US12408417B2Sep 2, 2025
Forksheet semiconductor structure including at least one bipolar junction transistor and method
GLOBALFOUNDRIES US INC0 citations50
US11990535B2May 21, 2024
Lateral heterojunction bipolar transistor with emitter and/or collector regrown from substrate and method
GLOBALFOUNDRIES US INC0 citations50
US11646361B2May 9, 2023
Electrical isolation structure using reverse dopant implantation from source/drain region in semiconductor fin
GLOBALFOUNDRIES US INC0 citations50
US11462632B2Oct 4, 2022
Lateral bipolar junction transistor device and method of making such a device
GLOBALFOUNDRIES US INC0 citations50