P

Inventor

LEE SANG WOO

KR199 patents
⚠️ This page may combine multiple inventors who share the name “LEE SANG WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

20 patents
US7064365B2Jun 20, 2006

Ferroelectric capacitors including a seed conductive film

SAMSUNG ELECTRONICS CO LTD77 citations98
US6915693B2Jul 12, 2005

MEMS gyroscope having mass vibrating vertically on substrate

SAMSUNG ELECTRONICS CO LTD79 citations98
US6796178B2Sep 28, 2004

Rotation-type decoupled MEMS gyroscope

SAMSUNG ELECTRONICS CO LTD83 citations97
US7081409B2Jul 25, 2006

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

SAMSUNG ELECTRONICS CO LTD50 citations96
US6259613B1Jul 10, 2001

Power factor correction (PFC) circuit

SAMSUNG ELECTRONICS CO LTD64 citations94
US6713310B2Mar 30, 2004

Ferroelectric memory device using via etch-stop layer and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD18 citations93
US6739189B2May 25, 2004

Micro structure for vertical displacement detection and fabricating method thereof

SAMSUNG ELECTRONICS CO LTD22 citations92
US9865597B2Jan 9, 2018

Semiconductor device having fin and dual liner

SAMSUNG ELECTRONICS CO LTD7 citations84
US7994708B2Aug 9, 2011

Organic light emitting device

SAMSUNG ELECTRONICS CO LTD7 citations84
US7833855B2Nov 16, 2010

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

SAMSUNG ELECTRONICS CO LTD10 citations84
US7776641B2Aug 17, 2010

Organic light emitting display device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US7615817B2Nov 10, 2009

Methods of manufacturing semiconductor devices and semiconductor devices manufactured using such a method

SAMSUNG ELECTRONICS CO LTD14 citations84
US7470612B2Dec 30, 2008

Method of forming metal wiring layer of semiconductor device

SAMSUNG ELECTRONICS CO LTD13 citations84
US7452811B2Nov 18, 2008

Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7214559B2May 8, 2007

Method for fabricating vertical offset structure

SAMSUNG ELECTRONICS CO LTD12 citations84
US7178397B2Feb 20, 2007

Apparatus and method for driving MEMS structure and detecting motion of the driven MEMS structure using a single electrode

SAMSUNG ELECTRONICS CO LTD16 citations84
US6909134B2Jun 21, 2005

Ferroelectric memory device using via etch-stop layer and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US10854612B2Dec 1, 2020

Semiconductor device including active region with variable atomic concentration of oxide semiconductor material and method of forming the same

SAMSUNG ELECTRONICS CO LTD10 citations83
US7521357B2Apr 21, 2009

Methods of forming metal wiring in semiconductor devices using etch stop layers

SAMSUNG ELECTRONICS CO LTD7 citations74
US7189641B2Mar 13, 2007

Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers

SAMSUNG ELECTRONICS CO LTD8 citations74

KOREA ELECTRONICS TELECOMM

4 patents

LEE SANG WOO

4 patents

GEN ELECTRIC

3 patents

SAMSUNG DISPLAY CO LTD

3 patents

FAIRCHILD KR SEMICONDUCTOR LTD

2 patents

UNIV MICHIGAN

2 patents

LG ELECTRONICS INC

1 patent

NURIPLAN CO LTD

1 patent

LG CHEMICAL LTD

1 patent

TAE GU CITY GAS CO LTD

1 patent

(unassigned)

1 patent

LG INF & COMM LTD

1 patent

NAJAFI KHALIL

1 patent

SONG JUNG-BAE

1 patent

LEE YUN-KYUNG

1 patent

SHIN CHUNG-HWAN

1 patent

HWANG JUNG YEON

1 patent

LEE SOK JOON

1 patent

Showing the top 50 of 199 patents by PatentIndex Score.