Inventor · disambiguated record
Ronald W. Knepper
Also filed as: KNEPPER RONALD W · KNEPPER RONALD WILLIAM
15 granted patents·367 citations·filing 1974–2001
94Inventor score
Files withIBM15
Top patents by PatentIndex Score
15 records- 0195US4071783AEnhancement/depletion mode field effect transistor driverIBM·Filed 1976·Granted Jan 31, 1978·54 cites·13 claims
- 0288US6426905B1High speed DRAM local bit line sense amplifierIBM·Filed 2001·Granted Jul 30, 2002·50 cites·15 claims
- 0385US4078947AMethod for forming a narrow channel length MOS field effect transistorIBM·Filed 1976·Granted Mar 14, 1978·44 cites·20 claims
- 0481US3961355ASemiconductor device having electrically insulating barriers for surface leakage sensitive devices and method of formingIBM·Filed 1974·Granted Jun 1, 1976·27 cites·6 claims
- 0579US5194397AMethod for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interfaceIBM·Filed 1991·Granted Mar 16, 1993·76 cites·23 claims
- 0677US4093875AField effect transistor (FET) circuit utilizing substrate potential for turning off depletion mode devicesIBM·Filed 1977·Granted Jun 6, 1978·16 cites·18 claims
- 0770US4651302ARead only memory including an isolation network connected between the array of memory cells and the output sense amplifier whereby reading speed is enhancedIBM·Filed 1984·Granted Mar 17, 1987·24 cites·1 claims
- 0867US4350991ANarrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitanceIBM·Filed 1979·Granted Sep 21, 1982·15 cites·4 claims
- 0965US5446312AVertical-gate CMOS compatible lateral bipolar transistorIBM·Filed 1994·Granted Aug 29, 1995·19 cites·4 claims
- 1053US5371022AMethod of forming a novel vertical-gate CMOS compatible lateral bipolar transistorIBM·Filed 1994·Granted Dec 6, 1994·11 cites·6 claims
- 1152US4460984AMemory array with switchable upper and lower word linesIBM·Filed 1981·Granted Jul 17, 1984·9 cites·2 claims
- 1246US3938008ACommon bus driver complementary protect circuitIBM·Filed 1974·Granted Feb 10, 1976·7 cites·6 claims
- 1340US4462091AWord group redundancy schemeIBM·Filed 1982·Granted Jul 24, 1984·5 cites·7 claims
- 1438US4922455AMemory cell with active device for saturation capacitance discharge prior to writingIBM·Filed 1987·Granted May 1, 1990·8 cites·19 claims
- 1532US5341023ANovel vertical-gate CMOS compatible lateral bipolar transistorIBM·Filed 1992·Granted Aug 23, 1994·2 cites·3 claims
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