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Inventor
RULLAN JONATHAN
US
2 patents
Patents
2 patents
US7776740B2
Aug 17, 2010
Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
TOKYO ELECTRON LTD
4 citations
58
US7884012B2
Feb 8, 2011
Void-free copper filling of recessed features for semiconductor devices
TOKYO ELECTRON LTD
1 citations
48