P

Inventor

IIDA MAKOTO

JP62 patents
⚠️ This page may combine multiple inventors who share the name “IIDA MAKOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHINETSU HANDOTAI KK

30 patents
US5968264AOct 19, 1999

Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same

SHINETSU HANDOTAI KK106 citations99
US6191009B1Feb 20, 2001

Method for producing silicon single crystal wafer and silicon single crystal wafer

SHINETSU HANDOTAI KK57 citations96
US6843847B1Jan 18, 2005

Silicon single crystal wafer and production method thereof and soi wafer

SHINETSU HANDOTAI KK38 citations93
US6048395AApr 11, 2000

Method for producing a silicon single crystal having few crystal defects

SHINETSU HANDOTAI KK35 citations93
US7258744B2Aug 21, 2007

Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal

SHINETSU HANDOTAI KK24 citations92
US6548035B1Apr 15, 2003

Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same

SHINETSU HANDOTAI KK30 citations92
US6364947B1Apr 2, 2002

Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same

SHINETSU HANDOTAI KK24 citations92
US6334896B1Jan 1, 2002

Single-crystal silicon wafer having few crystal defects and method for manufacturing the same

SHINETSU HANDOTAI KK23 citations92
US6299982B1Oct 9, 2001

Silicon single crystal wafer and method for producing silicon single crystal wafer

SHINETSU HANDOTAI KK25 citations92
US6261361B1Jul 17, 2001

Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it

SHINETSU HANDOTAI KK34 citations92
US6159438ADec 12, 2000

Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same

SHINETSU HANDOTAI KK19 citations92
US6077343AJun 20, 2000

Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it

SHINETSU HANDOTAI KK33 citations92
US6544490B1Apr 8, 2003

Silicon wafer and production method thereof and evaluation method for silicon wafer

SHINETSU HANDOTAI KK20 citations88
US6902618B2Jun 7, 2005

Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300 mm and its production method

SHINETSU HANDOTAI KK15 citations84
US6599360B2Jul 29, 2003

Silicon wafer, method for determining production conditions of silicon single crystal and method for producing silicon wafer

SHINETSU HANDOTAI KK13 citations84
US6197109B1Mar 6, 2001

Method for producing low defect silicon single crystal doped with nitrogen

SHINETSU HANDOTAI KK17 citations84
US6348180B1Feb 19, 2002

Silicon single crystal wafer having few crystal defects

SHINETSU HANDOTAI KK12 citations74
US6120598ASep 19, 2000

Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method

SHINETSU HANDOTAI KK8 citations74
US6120599ASep 19, 2000

Silicon single crystal wafer having few crystal defects, and method for producing the same

SHINETSU HANDOTAI KK13 citations74
US6066306AMay 23, 2000

Silicon single crystal wafer having few crystal defects, and method RFO producing the same

SHINETSU HANDOTAI KK12 citations74
US6027562AFeb 22, 2000

Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method

SHINETSU HANDOTAI KK6 citations74
US5948164ASep 7, 1999

Seed crystal holder

SHINETSU HANDOTAI KK13 citations74
US5882397AMar 16, 1999

Crystal pulling method

SHINETSU HANDOTAI KK16 citations74
US5871578AFeb 16, 1999

Methods for holding and pulling single crystal

SHINETSU HANDOTAI KK13 citations74
US7582159B2Sep 1, 2009

Method for producing a single crystal

SHINETSU HANDOTAI KK3 citations63
US7323048B2Jan 29, 2008

Method for producing a single crystal and a single crystal

SHINETSU HANDOTAI KK4 citations63
US6544332B1Apr 8, 2003

Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer

SHINETSU HANDOTAI KK6 citations63
US6120749ASep 19, 2000

Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same

SHINETSU HANDOTAI KK5 citations63
US6053975AApr 25, 2000

Crystal holding apparatus

SHINETSU HANDOTAI KK6 citations63
US5911821AJun 15, 1999

Method of holding a monocrystal, and method of growing the same

SHINETSU HANDOTAI KK4 citations63

HITACHI LTD

8 patents

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

3 patents

SECURITY PATROLS CO

3 patents

TACHI S CO

1 patent

TOSHIBA SEIKI KABUSHIKI KAISHA

1 patent

ISUZU MOTORS LTD

1 patent

IDEMITSU PETROCHEMICAL CO

1 patent

HITACHI CAR ENG CO LTD

1 patent

SHIN ETSU HANDOTAI LTD

1 patent

Showing the top 50 of 62 patents by PatentIndex Score.