Inventor

HWANG DAVID K

US31 patents

⚠️ This page may combine multiple inventors who share the name “HWANG DAVID K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HWANG DAVID K

MICRON TECHNOLOGY INC

Semiconductor device having reduced sub-threshold leakage

Method of manufacturing a memory device

Critical dimension control for integrated circuits

Critical dimension control for integrated circuits

Semiconductor device having reduced sub-threshold leakage

Methods of forming semiconductor constructions, and methods of recessing materials within openings

Method of manufacturing sidewall spacers on a memory device, and device comprising same

Method of manufacturing sidewall spacers on a memory device, and device comprising same

Memory device

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Methods of forming DRAM memory cells

Semiconductor device having reduced sub-threshold leakage

Method of manufacturing sidewall spacers on a memory device, and device comprising same

Vertical digit lines with alternating epitaxial silicon for horizontal access devices in 3D memory

Multiple, alternating epitaxial silicon for horizontal access devices in vertical three dimensional (3D) memory

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Methods of forming a transistor and methods of forming an array of memory cells

Semiconductor substrates and field effect transistor constructions

Methods of forming field effect transistor gates

Semiconductor constructions of memory devices with different sizes of GateLine trenches

Semiconductor constructions of memory device with different depth gate line trenches

Support pillars with multiple, alternating epitaxial silicon for horizontal access devices in vertical three-dimensional (3D) memory

Fabrication method of a lateral 3D memory device

EMHART GLASS MACH INVEST

Control for glassware forming system including bidirectional network gateway

HWANG DAVID K

Semiconductor device having reduced sub-threshold leakage

EMHART GLASS SA

Aligning fixture for mold opening and closing mechanism

EMHART INC

Control for glass forming machine

BUSCH BRETT W

Methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM

LINDHOLM LARSON D

Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cells