P

Inventor

SHIMANO HIROKI

JP59 patents
⚠️ This page may combine multiple inventors who share the name “SHIMANO HIROKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

31 patents
US6449204B1Sep 10, 2002

Dynamic semiconductor memory device capable of rearranging data storage from a one bit/one cell scheme in a normal mode to a one bit/two cell scheme in a twin-cell mode for lengthening a refresh interval

MITSUBISHI ELECTRIC CORP190 citations99
US6452859B1Sep 17, 2002

Dynamic semiconductor memory device superior in refresh characteristics

MITSUBISHI ELECTRIC CORP122 citations98
US6414890B2Jul 2, 2002

Semiconductor memory device capable of reliably performing burn-in test at wafer level

MITSUBISHI ELECTRIC CORP64 citations96
US6400625B2Jun 4, 2002

Semiconductor integrated circuit device capable of performing operational test for contained memory core at operating frequency higher than that of memory tester

MITSUBISHI ELECTRIC CORP66 citations96
US6388929B1May 14, 2002

Semiconductor memory device performing redundancy repair based on operation test and semiconductor integrated circuit device having the same

MITSUBISHI ELECTRIC CORP71 citations96
US6067260AMay 23, 2000

Synchronous semiconductor memory device having redundant circuit of high repair efficiency and allowing high speed access

MITSUBISHI ELECTRIC CORP69 citations96
US5164806ANov 17, 1992

Element isolating structure of semiconductor device suitable for high density integration

MITSUBISHI ELECTRIC CORP68 citations96
US6646944B2Nov 11, 2003

Semiconductor memory device

MITSUBISHI ELECTRIC CORP28 citations93
US6636454B2Oct 21, 2003

Low-power consumption semiconductor memory device

MITSUBISHI ELECTRIC CORP28 citations93
US6608795B2Aug 19, 2003

Semiconductor device including memory with reduced current consumption

MITSUBISHI ELECTRIC CORP17 citations93
US6545926B2Apr 8, 2003

Antifuse address detecting circuit programmable by applying a high voltage and semiconductor integrated circuit device provided with the same

MITSUBISHI ELECTRIC CORP23 citations93
US6486493B2Nov 26, 2002

Semiconductor integrated circuit device having hierarchical test interface circuit

MITSUBISHI ELECTRIC CORP21 citations93
US6483139B1Nov 19, 2002

Semiconductor memory device formed on semiconductor substrate

MITSUBISHI ELECTRIC CORP21 citations93
US6477108B2Nov 5, 2002

Semiconductor device including memory with reduced current consumption

MITSUBISHI ELECTRIC CORP16 citations93
US6456560B2Sep 24, 2002

Semiconductor integrated circuit device with test interface circuit for performing test on embedded memory from outside

MITSUBISHI ELECTRIC CORP23 citations93
US6418075B2Jul 9, 2002

Semiconductor merged logic and memory capable of preventing an increase in an abnormal current during power-up

MITSUBISHI ELECTRIC CORP58 citations93
US6404684B2Jun 11, 2002

Test interface circuit and semiconductor integrated circuit device including the same

MITSUBISHI ELECTRIC CORP35 citations93
US6331956B1Dec 18, 2001

Synchronous semiconductor memory device having redundant circuit of high repair efficiency and allowing high speed access

MITSUBISHI ELECTRIC CORP23 citations93
US6178122B1Jan 23, 2001

Boosted-voltage drive circuit operable with high reliability and semiconductor memory device employing the same

MITSUBISHI ELECTRIC CORP31 citations93
US6163488ADec 19, 2000

Semiconductor device with antifuse

MITSUBISHI ELECTRIC CORP43 citations93
US6459113B1Oct 1, 2002

Semiconductor integrated circuit device and method of manufacturing the same, and cell size calculation method for DRAM memory cells

MITSUBISHI ELECTRIC CORP39 citations92
US6573613B2Jun 3, 2003

Semiconductor memory device having cell plate electrodes allowing independent power supply for each redundant replacement unit

MITSUBISHI ELECTRIC CORP17 citations84
US6058053AMay 2, 2000

Semiconductor memory device capable of high speed operation and including redundant cells

MITSUBISHI ELECTRIC CORP19 citations84
US6597599B2Jul 22, 2003

Semiconductor memory

MITSUBISHI ELECTRIC CORP10 citations74
US6429495B2Aug 6, 2002

Semiconductor device with address programming circuit

MITSUBISHI ELECTRIC CORP6 citations74
US6377483B1Apr 23, 2002

Semiconductor memory device having improved memory cell and bit line pitch

MITSUBISHI ELECTRIC CORP10 citations74
US6327195B2Dec 4, 2001

Boosted-voltage drive circuit operable with high reliability and semiconductor memory device employing the same

MITSUBISHI ELECTRIC CORP9 citations74
US5268321ADec 7, 1993

Method of making DRAM cell having improved radiation protection

MITSUBISHI ELECTRIC CORP7 citations74
US5249215ASep 28, 1993

X-ray exposure system with curved reflecting mirrors

MITSUBISHI ELECTRIC CORP9 citations74
US4702797AOct 27, 1987

Method of manufacturing semiconductor memory device

MITSUBISHI ELECTRIC CORP16 citations74
US6590511B2Jul 8, 2003

Retrievable memory capable of outputting a piece of data with respect to a plurality of results of retrieve

MITSUBISHI ELECTRIC CORP2 citations63

RENESAS TECH CORP

14 patents

SHIMANO HIROKI

2 patents

RENESAS ELECTRONICS CORP

2 patents

RENESES TECHNOLOGY CORP

1 patent

Showing the top 50 of 59 patents by PatentIndex Score.