Inventor

CHOW TAT-SING PAUL

US6 patents

⚠️ This page may combine multiple inventors who share the name “CHOW TAT-SING PAUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GEN ELECTRIC

1 patent

US5814859ASep 29, 1998

Self-aligned transistor device including a patterned refracting dielectric layer

GEN ELECTRIC133 citations97

RENSSELAER POLYTECH INST

1 patent

US7144797B2Dec 5, 2006

Semiconductor device having multiple-zone junction termination extension, and method for fabricating the same

RENSSELAER POLYTECH INST23 citations85

SUGIMOTO MASAHIRO

1 patent

US8188514B2May 29, 2012

Transistor

SUGIMOTO MASAHIRO6 citations71

FAIRCHILD SEMICONDUCTOR

1 patent

US6656774B1Dec 2, 2003

Method to enhance operating characteristics of FET, IGBT, and MCT structures

FAIRCHILD SEMICONDUCTOR8 citations71

CHOW TAT-SING PAUL

1 patent

US8159024B2Apr 17, 2012

High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance

CHOW TAT-SING PAUL5 citations54

FURUKAWA ELECTRIC CO LTD

1 patent

US8350293B2Jan 8, 2013

Field effect transistor and method of manufacturing the same

FURUKAWA ELECTRIC CO LTD0 citations40

CHOW TAT-SING PAUL

GEN ELECTRIC

Self-aligned transistor device including a patterned refracting dielectric layer

RENSSELAER POLYTECH INST

Semiconductor device having multiple-zone junction termination extension, and method for fabricating the same

SUGIMOTO MASAHIRO

Transistor

FAIRCHILD SEMICONDUCTOR

Method to enhance operating characteristics of FET, IGBT, and MCT structures

CHOW TAT-SING PAUL

High voltage (&gt;100V) lateral trench power MOSFET with low specific-on-resistance

FURUKAWA ELECTRIC CO LTD

Field effect transistor and method of manufacturing the same

High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance