P

Inventor

LEE JUNE

US132 patents
⚠️ This page may combine multiple inventors who share the name “LEE JUNE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

20 patents
US7042770B2May 9, 2006

Memory devices with page buffer having dual registers and method of using the same

SAMSUNG ELECTRONICS CO LTD66 citations98
US6813184B2Nov 2, 2004

NAND flash memory and method of erasing, programming, and copy-back programming thereof

SAMSUNG ELECTRONICS CO LTD116 citations98
US6731540B2May 4, 2004

Non-volatile semiconductor memory device having shared row selection circuit

SAMSUNG ELECTRONICS CO LTD72 citations98
US7064986B2Jun 20, 2006

Non-volatile semiconductor memory device using differential start programming voltage and programming method thereof

SAMSUNG ELECTRONICS CO LTD66 citations97
US6996014B2Feb 7, 2006

Memory devices with page buffer having dual registers and method of using the same

SAMSUNG ELECTRONICS CO LTD58 citations96
US6529413B2Mar 4, 2003

Method for preventing over-erasing of memory cells and flash memory device using the same

SAMSUNG ELECTRONICS CO LTD63 citations96
US6795366B2Sep 21, 2004

Internal voltage converter scheme for controlling the power-up slope of internal supply voltage

SAMSUNG ELECTRONICS CO LTD22 citations93
US6738290B2May 18, 2004

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD22 citations93
US6735727B1May 11, 2004

Flash memory device with a novel redundancy selection circuit and method of using the same

SAMSUNG ELECTRONICS CO LTD44 citations93
US5986918ANov 16, 1999

Synchronous read only memory device

SAMSUNG ELECTRONICS CO LTD40 citations93
US7184308B2Feb 27, 2007

Flash memory devices and methods for programming the same

SAMSUNG ELECTRONICS CO LTD47 citations92
US6967868B2Nov 22, 2005

Semiconductor memory device having flexible column redundancy scheme

SAMSUNG ELECTRONICS CO LTD21 citations92
US6724682B2Apr 20, 2004

Nonvolatile semiconductor memory device having selective multiple-speed operation mode

SAMSUNG ELECTRONICS CO LTD35 citations92
US6018487AJan 25, 2000

Read-only memory device having bit line discharge circuitry and method of reading data from the same

SAMSUNG ELECTRONICS CO LTD39 citations92
US7596026B2Sep 29, 2009

Program method of non-volatile memory device

SAMSUNG ELECTRONICS CO LTD12 citations84
US7184307B2Feb 27, 2007

Flash memory device capable of preventing program disturbance according to partial programming

SAMSUNG ELECTRONICS CO LTD18 citations84
US7180783B2Feb 20, 2007

Non-volatile memory devices that include a programming verification function

SAMSUNG ELECTRONICS CO LTD13 citations84
US6845041B2Jan 18, 2005

Non-volatile semiconductor memory device with accelerated column scanning scheme

SAMSUNG ELECTRONICS CO LTD12 citations84
US6377486B1Apr 23, 2002

Block architecture option circuit for nonvolatile semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD14 citations84
US6888756B2May 3, 2005

Low-voltage non-volatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD14 citations79

MICRON TECHNOLOGY INC

11 patents

SUN MICROSYSTEMS INC

6 patents

SK HYNIX MEMORY SOLUTIONS INC

2 patents

LEE JUNE

2 patents

(unassigned)

1 patent

LIFESCAN INC

1 patent

CHEUNG GEORGE

1 patent

BRISTOL MYERS CO

1 patent

RubberStampede Partnership

1 patent

NAT SEMICONDUCTOR CORPORATION

1 patent

SK HYNIX INC

1 patent

INTEL CORP

1 patent

NOBUNAGA DEAN K

1 patent

Showing the top 50 of 132 patents by PatentIndex Score.