P

Inventor

LIN XI-WEI

US75 patents
⚠️ This page may combine multiple inventors who share the name “LIN XI-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VLSI TECHNOLOGY INC

22 patents
US5854510ADec 29, 1998

Low power programmable fuse structures

VLSI TECHNOLOGY INC114 citations99
US5882998AMar 16, 1999

Low power programmable fuse structures and methods for making the same

VLSI TECHNOLOGY INC99 citations98
US5883011AMar 16, 1999

Method of removing an inorganic antireflective coating from a semiconductor substrate

VLSI TECHNOLOGY INC105 citations97
US6207543B1Mar 27, 2001

Metallization technique for gate electrodes and local interconnects

VLSI TECHNOLOGY INC58 citations96
US5953612ASep 14, 1999

Self-aligned silicidation technique to independently form silicides of different thickness on a semiconductor device

VLSI TECHNOLOGY INC63 citations95
US6218303B1Apr 17, 2001

Via formation using oxide reduction of underlying copper

VLSI TECHNOLOGY INC24 citations93
US6143613ANov 7, 2000

Selective exclusion of silicide formation to make polysilicon resistors

VLSI TECHNOLOGY INC34 citations93
US6093656AJul 25, 2000

Method of minimizing dishing during chemical mechanical polishing of semiconductor metals for making a semiconductor device

VLSI TECHNOLOGY INC35 citations93
US6084464AJul 4, 2000

On-chip decoupling capacitor system with parallel fuse

VLSI TECHNOLOGY INC26 citations93
US6074921AJun 13, 2000

Self-aligned processing of semiconductor device features

VLSI TECHNOLOGY INC37 citations93
US5985749ANov 16, 1999

Method of forming a via hole structure including CVD tungsten silicide barrier layer

VLSI TECHNOLOGY INC31 citations93
US5963784AOct 5, 1999

Methods of determining parameters of a semiconductor device and the width of an insulative spacer of a semiconductor device

VLSI TECHNOLOGY INC30 citations93
US5933739AAug 3, 1999

Self-aligned silicidation structure and method of formation thereof

VLSI TECHNOLOGY INC32 citations93
US5834356ANov 10, 1998

Method of making high resistive structures in salicided process semiconductor devices

VLSI TECHNOLOGY INC42 citations93
US6150266ANov 21, 2000

Local interconnect formed using silicon spacer

VLSI TECHNOLOGY INC27 citations92
US5895245AApr 20, 1999

Plasma ash for silicon surface preparation

VLSI TECHNOLOGY INC20 citations92
US5880006AMar 9, 1999

Method for fabrication of a semiconductor device

VLSI TECHNOLOGY INC24 citations92
US6060376AMay 9, 2000

Integrated etch process for polysilicon/metal gate

VLSI TECHNOLOGY INC16 citations82
US6309937B1Oct 30, 2001

Method of making shallow junction semiconductor devices

VLSI TECHNOLOGY INC10 citations74
US6303504B1Oct 16, 2001

Method of improving process robustness of nickel salicide in semiconductors

VLSI TECHNOLOGY INC9 citations74
US6265252B1Jul 24, 2001

Reducing the formation of electrical leakage pathways during manufacture of an electronic device

VLSI TECHNOLOGY INC9 citations74
US6309948B1Oct 30, 2001

Method for fabrication of a semiconductor device

VLSI TECHNOLOGY INC14 citations73

SYNOPSYS INC

20 patents
US7926018B2Apr 12, 2011

Method and apparatus for generating a layout for a transistor

SYNOPSYS INC108 citations98
US7895548B2Feb 22, 2011

Filler cells for design optimization in a place-and-route system

SYNOPSYS INC128 citations98
US7484198B2Jan 27, 2009

Managing integrated circuit stress using dummy diffusion regions

SYNOPSYS INC48 citations96
US8964453B2Feb 24, 2015

SRAM layouts

SYNOPSYS INC16 citations93
US7897479B2Mar 1, 2011

Managing integrated circuit stress using dummy diffusion regions

SYNOPSYS INC18 citations93
US7681164B2Mar 16, 2010

Method and apparatus for placing an integrated circuit device within an integrated circuit layout

SYNOPSYS INC31 citations93
US7669161B2Feb 23, 2010

Minimizing effects of interconnect variations in integrated circuit designs

SYNOPSYS INC17 citations93
US7600207B2Oct 6, 2009

Stress-managed revision of integrated circuit layouts

SYNOPSYS INC24 citations93
US7542891B2Jun 2, 2009

Method of correlating silicon stress to device instance parameters for circuit simulation

SYNOPSYS INC40 citations93
US9547740B2Jan 17, 2017

Methods for fabricating high-density integrated circuit devices

SYNOPSYS INC17 citations84
US7908573B2Mar 15, 2011

Minimizing effects of interconnect variations in integrated circuit designs

SYNOPSYS INC11 citations84
US7767515B2Aug 3, 2010

Managing integrated circuit stress using stress adjustment trenches

SYNOPSYS INC18 citations84
US10311200B2Jun 4, 2019

Pre-silicon design rule evaluation

SYNOPSYS INC7 citations82
US9147027B2Sep 29, 2015

Chip cross-section identification and rendering during failure analysis

SYNOPSYS INC6 citations82
US11984384B2May 14, 2024

Power routing for 2.5D or 3D integrated circuits including a buried power rail and interposer with power delivery network

SYNOPSYS INC2 citations73
US11742247B2Aug 29, 2023

Epitaxial growth of source and drain materials in a complementary field effect transistor (CFET)

SYNOPSYS INC2 citations73
US9418189B2Aug 16, 2016

SRAM layouts

SYNOPSYS INC4 citations73
US9379018B2Jun 28, 2016

Increasing Ion/Ioff ratio in FinFETs and nano-wires

SYNOPSYS INC3 citations71
US8847324B2Sep 30, 2014

Increasing ION /IOFF ratio in FinFETs and nano-wires

SYNOPSYS INC4 citations71
US12581933B2Mar 17, 2026

Power routing for 2.5D or 3D integrated circuits including a buried power rail and interposer with power delivery network

SYNOPSYS INC0 citations63

MOROZ VICTOR

3 patents

KONINKL PHILIPS ELECTRONICS NV

2 patents

LIN XI-WEI

2 patents

PHILIPS SEMICONDUCTORS INC

1 patent

Showing the top 50 of 75 patents by PatentIndex Score.