Inventor
LIN XI-WEI
US75 patents
⚠️ This page may combine multiple inventors who share the name “LIN XI-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
VLSI TECHNOLOGY INC
22 patentsUS5854510ADec 29, 1998
Low power programmable fuse structures
VLSI TECHNOLOGY INC114 citations99
US5882998AMar 16, 1999
Low power programmable fuse structures and methods for making the same
VLSI TECHNOLOGY INC99 citations98
US5883011AMar 16, 1999
Method of removing an inorganic antireflective coating from a semiconductor substrate
VLSI TECHNOLOGY INC105 citations97
US6207543B1Mar 27, 2001
Metallization technique for gate electrodes and local interconnects
VLSI TECHNOLOGY INC58 citations96
US5953612ASep 14, 1999
Self-aligned silicidation technique to independently form silicides of different thickness on a semiconductor device
VLSI TECHNOLOGY INC63 citations95
US6218303B1Apr 17, 2001
Via formation using oxide reduction of underlying copper
VLSI TECHNOLOGY INC24 citations93
US6143613ANov 7, 2000
Selective exclusion of silicide formation to make polysilicon resistors
VLSI TECHNOLOGY INC34 citations93
US6093656AJul 25, 2000
Method of minimizing dishing during chemical mechanical polishing of semiconductor metals for making a semiconductor device
VLSI TECHNOLOGY INC35 citations93
US6084464AJul 4, 2000
On-chip decoupling capacitor system with parallel fuse
VLSI TECHNOLOGY INC26 citations93
US6074921AJun 13, 2000
Self-aligned processing of semiconductor device features
VLSI TECHNOLOGY INC37 citations93
US5985749ANov 16, 1999
Method of forming a via hole structure including CVD tungsten silicide barrier layer
VLSI TECHNOLOGY INC31 citations93
US5963784AOct 5, 1999
Methods of determining parameters of a semiconductor device and the width of an insulative spacer of a semiconductor device
VLSI TECHNOLOGY INC30 citations93
US5933739AAug 3, 1999
Self-aligned silicidation structure and method of formation thereof
VLSI TECHNOLOGY INC32 citations93
US5834356ANov 10, 1998
Method of making high resistive structures in salicided process semiconductor devices
VLSI TECHNOLOGY INC42 citations93
US6150266ANov 21, 2000
Local interconnect formed using silicon spacer
VLSI TECHNOLOGY INC27 citations92
US5895245AApr 20, 1999
Plasma ash for silicon surface preparation
VLSI TECHNOLOGY INC20 citations92
US5880006AMar 9, 1999
Method for fabrication of a semiconductor device
VLSI TECHNOLOGY INC24 citations92
US6060376AMay 9, 2000
Integrated etch process for polysilicon/metal gate
VLSI TECHNOLOGY INC16 citations82
US6309937B1Oct 30, 2001
Method of making shallow junction semiconductor devices
VLSI TECHNOLOGY INC10 citations74
US6303504B1Oct 16, 2001
Method of improving process robustness of nickel salicide in semiconductors
VLSI TECHNOLOGY INC9 citations74
US6265252B1Jul 24, 2001
Reducing the formation of electrical leakage pathways during manufacture of an electronic device
VLSI TECHNOLOGY INC9 citations74
US6309948B1Oct 30, 2001
Method for fabrication of a semiconductor device
VLSI TECHNOLOGY INC14 citations73
SYNOPSYS INC
20 patentsUS7926018B2Apr 12, 2011
Method and apparatus for generating a layout for a transistor
SYNOPSYS INC108 citations98
US7895548B2Feb 22, 2011
Filler cells for design optimization in a place-and-route system
SYNOPSYS INC128 citations98
US7484198B2Jan 27, 2009
Managing integrated circuit stress using dummy diffusion regions
SYNOPSYS INC48 citations96
US8964453B2Feb 24, 2015
SRAM layouts
SYNOPSYS INC16 citations93
US7897479B2Mar 1, 2011
Managing integrated circuit stress using dummy diffusion regions
SYNOPSYS INC18 citations93
US7681164B2Mar 16, 2010
Method and apparatus for placing an integrated circuit device within an integrated circuit layout
SYNOPSYS INC31 citations93
US7669161B2Feb 23, 2010
Minimizing effects of interconnect variations in integrated circuit designs
SYNOPSYS INC17 citations93
US7600207B2Oct 6, 2009
Stress-managed revision of integrated circuit layouts
SYNOPSYS INC24 citations93
US7542891B2Jun 2, 2009
Method of correlating silicon stress to device instance parameters for circuit simulation
SYNOPSYS INC40 citations93
US9547740B2Jan 17, 2017
Methods for fabricating high-density integrated circuit devices
SYNOPSYS INC17 citations84
US7908573B2Mar 15, 2011
Minimizing effects of interconnect variations in integrated circuit designs
SYNOPSYS INC11 citations84
US7767515B2Aug 3, 2010
Managing integrated circuit stress using stress adjustment trenches
SYNOPSYS INC18 citations84
US10311200B2Jun 4, 2019
Pre-silicon design rule evaluation
SYNOPSYS INC7 citations82
US9147027B2Sep 29, 2015
Chip cross-section identification and rendering during failure analysis
SYNOPSYS INC6 citations82
US11984384B2May 14, 2024
Power routing for 2.5D or 3D integrated circuits including a buried power rail and interposer with power delivery network
SYNOPSYS INC2 citations73
US11742247B2Aug 29, 2023
Epitaxial growth of source and drain materials in a complementary field effect transistor (CFET)
SYNOPSYS INC2 citations73
US9418189B2Aug 16, 2016
SRAM layouts
SYNOPSYS INC4 citations73
US9379018B2Jun 28, 2016
Increasing Ion/Ioff ratio in FinFETs and nano-wires
SYNOPSYS INC3 citations71
US8847324B2Sep 30, 2014
Increasing ION /IOFF ratio in FinFETs and nano-wires
SYNOPSYS INC4 citations71
US12581933B2Mar 17, 2026
Power routing for 2.5D or 3D integrated circuits including a buried power rail and interposer with power delivery network
SYNOPSYS INC0 citations63
MOROZ VICTOR
3 patentsUS8069430B2Nov 29, 2011
Stress-managed revision of integrated circuit layouts
MOROZ VICTOR8 citations84
US8686512B2Apr 1, 2014
Elevation of transistor channels to reduce impact of shallow trench isolation on transistor performance
MOROZ VICTOR4 citations73
US8701054B2Apr 15, 2014
Boosting transistor performance with non-rectangular channels
MOROZ VICTOR5 citations71
KONINKL PHILIPS ELECTRONICS NV
2 patentsLIN XI-WEI
2 patentsPHILIPS SEMICONDUCTORS INC
1 patentShowing the top 50 of 75 patents by PatentIndex Score.