P

Inventor

NAKANO KAICHIRO

JP46 patents
⚠️ This page may combine multiple inventors who share the name “NAKANO KAICHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

40 patents
US5738975AApr 14, 1998

Photosensitive resin and method for patterning by use of the same

NEC CORP149 citations99
US5994025ANov 30, 1999

Photoresist, compounds for composing the photoresist, and method of forming pattern by using the photoresist

NEC CORP93 citations97
US7432035B2Oct 7, 2008

(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it

NEC CORP54 citations96
US7186495B2Mar 6, 2007

(Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it

NEC CORP46 citations96
US5866304AFeb 2, 1999

Photosensitive resin and method for patterning by use of the same

NEC CORP61 citations96
US5691111ANov 25, 1997

Photosensitive resin composition useful as resist for deep UV lithography containing sulfonium salts

NEC CORP47 citations96
US5635332AJun 3, 1997

Alkylsulfonium salts and photoresist compositions containing the same

NEC CORP63 citations96
US6528232B1Mar 4, 2003

Sulfonium salt compound, photoresist composition and method for patterning by employing same

NEC CORP28 citations93
US6352813B2Mar 5, 2002

Photosensitive resin composition and patterning method using the same

NEC CORP22 citations93
US6146806ANov 14, 2000

Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same

NEC CORP36 citations93
US6140010AOct 31, 2000

Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same

NEC CORP27 citations93
US6106998AAug 22, 2000

Negative resist materials, pattern formation method making use thereof, and method of manufacturing semiconductor devices

NEC CORP44 citations93
US6074801AJun 13, 2000

Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same

NEC CORP41 citations93
US6030747AFeb 29, 2000

Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask

NEC CORP29 citations93
US5756850AMay 26, 1998

Sulfonium salts having bridged cyclic alkyl group useful as resist for deep UV lithography

NEC CORP18 citations93
US5747622AMay 5, 1998

Polymer having silicon atoms and sulfonium salt units and photoresist compositions containing the same

NEC CORP21 citations93
US5621019AApr 15, 1997

Monomer having vinyl group, polymer thereof and photosensitive resin including those

NEC CORP37 citations93
US5585507ADec 17, 1996

Alkylsulfonium salts and photoresist compositions containing the same

NEC CORP35 citations93
US5770346AJun 23, 1998

Photoresist and compounds for composing the photoresist

NEC CORP18 citations92
US5665518ASep 9, 1997

Photoresist and monomer and polymer for composing the photoresist

NEC CORP36 citations92
US6638685B2Oct 28, 2003

Photoacid generator containing two kinds of sulfonium salt compound, chemically amplified resist containing the same and pattern transfer method

NEC CORP9 citations74
US6639084B2Oct 28, 2003

Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer

NEC CORP6 citations74
US6602647B2Aug 5, 2003

Sulfonium salt compound and resist composition and pattern forming method using the same

NEC CORP11 citations74
US6559337B2May 6, 2003

(Meth)acrylate, polymer, photoresist composition, and pattern forming process making use of the composition

NEC CORP10 citations74
US6469197B1Oct 22, 2002

Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same

NEC CORP8 citations74
US6391529B2May 21, 2002

(Meth)acrylate, polymer photoresist composition, and pattern forming process making use of the composition

NEC CORP12 citations74
US6287746B1Sep 11, 2001

Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask

NEC CORP12 citations74
US6248499B1Jun 19, 2001

(Meth)acrylate, polymer, photoresist composition, and pattern forming process making use of the composition

NEC CORP6 citations74
US5439990AAug 8, 1995

Photolytic polymer and photoresist composition

NEC CORP8 citations74
US5985522ANov 16, 1999

Photoresist and compounds for composing the photoresist

NEC CORP14 citations73
US8969483B2Mar 3, 2015

(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it

NEC CORP2 citations63
US7847017B2Dec 7, 2010

Photosensitive resin composition for optical waveguide formation, optical waveguide and method for producing optical waveguide

NEC CORP3 citations63
US7232639B2Jun 19, 2007

Monomer having fluorine-containing acetal or ketal structure, polymer thereof, and chemical-amplification-type resist composition as well as process for formation of pattern with use of the same

NEC CORP4 citations63
US6849384B2Feb 1, 2005

Photoacid generators, photoresist compositions containing the same and pattering method with the use of the compositions

NEC CORP4 citations63
US6746722B2Jun 8, 2004

Fluorine-containing phenylmaleimide derivative, polymer, chemically amplified resist composition, and method for pattern formation using the composition

NEC CORP2 citations63
US6710188B2Mar 23, 2004

Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer

NEC CORP4 citations63
US7439005B2Oct 21, 2008

Styrene derivative, styrene polymer, photosensitive resin composition, and method for forming pattern

NEC CORP0 citations52
US7192682B2Mar 20, 2007

Unsaturated monomers, polymers, chemically-amplified resist composition, and process of pattern formation

NEC CORP0 citations52
US6924079B2Aug 2, 2005

Resist resin, chemical amplification type resist, and method of forming of pattern with the same

NEC CORP0 citations52
US7470499B2Dec 30, 2008

Alicyclic unsaturated compound, polymer, chemically amplified resist composition and method for forming pattern using said composition

NEC CORP0 citations42

MAEDA KATSUMI

2 patents

NEC CORPROATION

1 patent

OHMURA MASAKI

1 patent

NAKAHARA KENTARO

1 patent

KOREEDA YUICHI

1 patent