Inventor
NAKANO KAICHIRO
JP46 patents
⚠️ This page may combine multiple inventors who share the name “NAKANO KAICHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
40 patentsUS5738975AApr 14, 1998
Photosensitive resin and method for patterning by use of the same
NEC CORP149 citations99
US5994025ANov 30, 1999
Photoresist, compounds for composing the photoresist, and method of forming pattern by using the photoresist
NEC CORP93 citations97
US7432035B2Oct 7, 2008
(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it
NEC CORP54 citations96
US7186495B2Mar 6, 2007
(Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it
NEC CORP46 citations96
US5866304AFeb 2, 1999
Photosensitive resin and method for patterning by use of the same
NEC CORP61 citations96
US5691111ANov 25, 1997
Photosensitive resin composition useful as resist for deep UV lithography containing sulfonium salts
NEC CORP47 citations96
US5635332AJun 3, 1997
Alkylsulfonium salts and photoresist compositions containing the same
NEC CORP63 citations96
US6528232B1Mar 4, 2003
Sulfonium salt compound, photoresist composition and method for patterning by employing same
NEC CORP28 citations93
US6352813B2Mar 5, 2002
Photosensitive resin composition and patterning method using the same
NEC CORP22 citations93
US6146806ANov 14, 2000
Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same
NEC CORP36 citations93
US6140010AOct 31, 2000
Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same
NEC CORP27 citations93
US6106998AAug 22, 2000
Negative resist materials, pattern formation method making use thereof, and method of manufacturing semiconductor devices
NEC CORP44 citations93
US6074801AJun 13, 2000
Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same
NEC CORP41 citations93
US6030747AFeb 29, 2000
Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask
NEC CORP29 citations93
US5756850AMay 26, 1998
Sulfonium salts having bridged cyclic alkyl group useful as resist for deep UV lithography
NEC CORP18 citations93
US5747622AMay 5, 1998
Polymer having silicon atoms and sulfonium salt units and photoresist compositions containing the same
NEC CORP21 citations93
US5621019AApr 15, 1997
Monomer having vinyl group, polymer thereof and photosensitive resin including those
NEC CORP37 citations93
US5585507ADec 17, 1996
Alkylsulfonium salts and photoresist compositions containing the same
NEC CORP35 citations93
US5770346AJun 23, 1998
Photoresist and compounds for composing the photoresist
NEC CORP18 citations92
US5665518ASep 9, 1997
Photoresist and monomer and polymer for composing the photoresist
NEC CORP36 citations92
US6638685B2Oct 28, 2003
Photoacid generator containing two kinds of sulfonium salt compound, chemically amplified resist containing the same and pattern transfer method
NEC CORP9 citations74
US6639084B2Oct 28, 2003
Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer
NEC CORP6 citations74
US6602647B2Aug 5, 2003
Sulfonium salt compound and resist composition and pattern forming method using the same
NEC CORP11 citations74
US6559337B2May 6, 2003
(Meth)acrylate, polymer, photoresist composition, and pattern forming process making use of the composition
NEC CORP10 citations74
US6469197B1Oct 22, 2002
Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same
NEC CORP8 citations74
US6391529B2May 21, 2002
(Meth)acrylate, polymer photoresist composition, and pattern forming process making use of the composition
NEC CORP12 citations74
US6287746B1Sep 11, 2001
Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask
NEC CORP12 citations74
US6248499B1Jun 19, 2001
(Meth)acrylate, polymer, photoresist composition, and pattern forming process making use of the composition
NEC CORP6 citations74
US5439990AAug 8, 1995
Photolytic polymer and photoresist composition
NEC CORP8 citations74
US5985522ANov 16, 1999
Photoresist and compounds for composing the photoresist
NEC CORP14 citations73
US8969483B2Mar 3, 2015
(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it
NEC CORP2 citations63
US7847017B2Dec 7, 2010
Photosensitive resin composition for optical waveguide formation, optical waveguide and method for producing optical waveguide
NEC CORP3 citations63
US7232639B2Jun 19, 2007
Monomer having fluorine-containing acetal or ketal structure, polymer thereof, and chemical-amplification-type resist composition as well as process for formation of pattern with use of the same
NEC CORP4 citations63
US6849384B2Feb 1, 2005
Photoacid generators, photoresist compositions containing the same and pattering method with the use of the compositions
NEC CORP4 citations63
US6746722B2Jun 8, 2004
Fluorine-containing phenylmaleimide derivative, polymer, chemically amplified resist composition, and method for pattern formation using the composition
NEC CORP2 citations63
US6710188B2Mar 23, 2004
Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer
NEC CORP4 citations63
US7439005B2Oct 21, 2008
Styrene derivative, styrene polymer, photosensitive resin composition, and method for forming pattern
NEC CORP0 citations52
US7192682B2Mar 20, 2007
Unsaturated monomers, polymers, chemically-amplified resist composition, and process of pattern formation
NEC CORP0 citations52
US6924079B2Aug 2, 2005
Resist resin, chemical amplification type resist, and method of forming of pattern with the same
NEC CORP0 citations52
US7470499B2Dec 30, 2008
Alicyclic unsaturated compound, polymer, chemically amplified resist composition and method for forming pattern using said composition
NEC CORP0 citations42
MAEDA KATSUMI
2 patentsUS8802798B2Aug 12, 2014
(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it
MAEDA KATSUMI0 citations50
US8414733B2Apr 9, 2013
Photosensitive resin composition for optical waveguide formation, optical waveguide and method for producing optical waveguide
MAEDA KATSUMI0 citations50