Inventor
OKINO TERUAKI
JP37 patents
Patents
37 patentsUS5981947ANov 9, 1999
Apparatus for detecting or collecting secondary electrons, charged-particle beam exposure apparatus comprising same, and related methods
NIKON CORP94 citations98
US5914493AJun 22, 1999
Charged-particle-beam exposure apparatus and methods with substrate-temperature control
NIKON CORP87 citations96
US5973333AOct 26, 1999
Charged-particle-beam pattern-transfer apparatus and methods
NIKON CORP40 citations93
US6815693B2Nov 9, 2004
Charged-particle-beam microlithography apparatus and methods including proximity-effect correction
NIKON CORP38 citations92
US6258511B1Jul 10, 2001
Charged particle beam exposure method utilizing partial exposure stitch area
NIKON CORP21 citations92
US6072184AJun 6, 2000
Charged-particle-beam projection methods
NIKON CORP44 citations92
US5912469AJun 15, 1999
Charged-particle-beam microlithography apparatus
NIKON CORP55 citations92
US5912467AJun 15, 1999
Method and apparatus for measurement of pattern formation characteristics
NIKON CORP29 citations92
US5879842AMar 9, 1999
Pattern projection method with charged particle beam utilizing continuous movement of mask and substrate
NIKON CORP17 citations92
US5874198AFeb 23, 1999
Charged particle beam transfer method
NIKON CORP38 citations92
US5856677AJan 5, 1999
Pattern projection method with charged particle beam and charged particle beam projection system
NIKON CORP30 citations92
US5798196AAug 25, 1998
Pattern transfer method utilizing distribution condition evaluation by charged particle beam
NIKON CORP19 citations92
US6447964B2Sep 10, 2002
Charged-particle-beam microlithography methods including chip-exposure sequences for reducing thermally induced lateral shift of exposure position on the substrate
NIKON CORP17 citations84
US6194732B1Feb 27, 2001
Charged-particle-beam exposure methods with beam parallelism detection and correction
NIKON CORP16 citations84
US5817442AOct 6, 1998
Pattern projection method with charged particle beam utilizing continuous movement to perform projection
NIKON CORP15 citations82
US6680481B2Jan 20, 2004
Mark-detection methods and charged-particle-beam microlithography methods and apparatus comprising same
NIKON CORP8 citations74
US6657207B2Dec 2, 2003
Charged-particle-beam microlithography apparatus and methods including optical corrections made during subfield exposures
NIKON CORP7 citations74
US6541169B1Apr 1, 2003
Methods for charged-particle-beam microlithography including correction of deflection aberrations, and device-manufacturing methods comprising same
NIKON CORP10 citations74
US6362489B2Mar 26, 2002
Charged-particle-beam microlithography methods exhibiting reduced thermal deformation of mark-defining member
NIKON CORP10 citations74
US6307209B1Oct 23, 2001
Pattern-transfer method and apparatus
NIKON CORP10 citations74
US6277542B1Aug 21, 2001
Charged-particle-beam projection-exposure methods exhibiting more uniform beam-current density
NIKON CORP11 citations74
US6207962B1Mar 27, 2001
Charged-particle-beam microlithography apparatus and methods exhibiting reduced thermal deformation of mark-defining member
NIKON CORP12 citations74
US6162581ADec 19, 2000
Charged particle beam pattern-transfer method utilizing non-uniform dose distribution in stitching region
NIKON CORP11 citations74
US6151101ANov 21, 2000
Charged-particle-beam projection-exposure apparatus and methods exhibiting increased throughtput
NIKON CORP12 citations74
US6027843AFeb 22, 2000
Charged-particle-beam microlithography methods including correction of imaging faults
NIKON CORP14 citations74
US5933217AAug 3, 1999
Electron-beam projection-microlithography apparatus and methods
NIKON CORP16 citations74
US5929457AJul 27, 1999
Charged particle beam transfer apparatus
NIKON CORP7 citations74
US5700604ADec 23, 1997
Charged particle beam exposure method and mask employed therefor
NIKON CORP9 citations74
US5624774AApr 29, 1997
Method for transferring patterns with charged particle beam
NIKON CORP11 citations74
US5567949AOct 22, 1996
Charged particle beam transfer apparatus
NIKON CORP13 citations74
US6936831B2Aug 30, 2005
Divided reticles for charged-particle-beam microlithography apparatus, and methods for using same
NIKON CORP4 citations63
US6894291B2May 17, 2005
Apparatus and methods for blocking highly scattered charged particles in a patterned beam in a charged-particle-beam microlithography system
NIKON CORP3 citations63
US6376137B1Apr 23, 2002
Charged-particle-beam microlithography apparatus and methods including correction of stage-positioning errors using a deflector
NIKON CORP6 citations63
US5989753ANov 23, 1999
Method, apparatus, and mask for pattern projection using a beam of charged particles
NIKON CORP2 citations63
US5789119AAug 4, 1998
Image transfer mask for charged particle-beam
NIKON CORP6 citations63
US6664551B2Dec 16, 2003
Methods for detecting incidence orthogonality of a patterned beam in charged-particle-beam (CPB) microlithography, and CPB microlithography systems that perform same
NIKON CORP1 citations52
US5888699AMar 30, 1999
Pattern transfer method and transfer apparatus by charged particle beam
NIKON CORP1 citations52