P

Inventor

HASEGAWA ETSUO

JP74 patents
⚠️ This page may combine multiple inventors who share the name “HASEGAWA ETSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

37 patents
US5738975AApr 14, 1998

Photosensitive resin and method for patterning by use of the same

NEC CORP149 citations99
US5994025ANov 30, 1999

Photoresist, compounds for composing the photoresist, and method of forming pattern by using the photoresist

NEC CORP93 citations97
US7432035B2Oct 7, 2008

(Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it

NEC CORP54 citations96
US7186495B2Mar 6, 2007

(Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it

NEC CORP46 citations96
US5866304AFeb 2, 1999

Photosensitive resin and method for patterning by use of the same

NEC CORP61 citations96
US5691111ANov 25, 1997

Photosensitive resin composition useful as resist for deep UV lithography containing sulfonium salts

NEC CORP47 citations96
US5635332AJun 3, 1997

Alkylsulfonium salts and photoresist compositions containing the same

NEC CORP63 citations96
US6528232B1Mar 4, 2003

Sulfonium salt compound, photoresist composition and method for patterning by employing same

NEC CORP28 citations93
US6437052B1Aug 20, 2002

Monomer having diol structure, polymer thereof, and negative photoresist composition and pattern forming method using the same

NEC CORP29 citations93
US6352813B2Mar 5, 2002

Photosensitive resin composition and patterning method using the same

NEC CORP22 citations93
US6146806ANov 14, 2000

Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same

NEC CORP36 citations93
US6140010AOct 31, 2000

Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same

NEC CORP27 citations93
US6106998AAug 22, 2000

Negative resist materials, pattern formation method making use thereof, and method of manufacturing semiconductor devices

NEC CORP44 citations93
US6074801AJun 13, 2000

Negative type photoresist composition used for light beam with short wavelength and method of forming pattern using the same

NEC CORP41 citations93
US6030747AFeb 29, 2000

Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask

NEC CORP29 citations93
US5756850AMay 26, 1998

Sulfonium salts having bridged cyclic alkyl group useful as resist for deep UV lithography

NEC CORP18 citations93
US5747622AMay 5, 1998

Polymer having silicon atoms and sulfonium salt units and photoresist compositions containing the same

NEC CORP21 citations93
US5621019AApr 15, 1997

Monomer having vinyl group, polymer thereof and photosensitive resin including those

NEC CORP37 citations93
US5585507ADec 17, 1996

Alkylsulfonium salts and photoresist compositions containing the same

NEC CORP35 citations93
US6866964B2Mar 15, 2005

Secondary battery

NEC CORP19 citations92
US6503656B1Jan 7, 2003

Method for production of battery

NEC CORP22 citations92
US6235433B1May 22, 2001

High molecular gel electrolyte and secondary battery using the same

NEC CORP41 citations92
US5770346AJun 23, 1998

Photoresist and compounds for composing the photoresist

NEC CORP18 citations92
US5665518ASep 9, 1997

Photoresist and monomer and polymer for composing the photoresist

NEC CORP36 citations92
US5586001ADec 17, 1996

Solid electrolyte capacitor using polyaniline doped with disulfonic acid

NEC CORP47 citations92
US5674576AOct 7, 1997

Liquid crystalline optical device operable at a low drive voltage

NEC CORP45 citations91
US7642011B2Jan 5, 2010

Secondary battery with a radical compound active material

NEC CORP8 citations84
US6638685B2Oct 28, 2003

Photoacid generator containing two kinds of sulfonium salt compound, chemically amplified resist containing the same and pattern transfer method

NEC CORP9 citations74
US6639358B2Oct 28, 2003

Organic electroluminescent device with buried lower elecrodes and method for manufacturing the same

NEC CORP9 citations74
US6602647B2Aug 5, 2003

Sulfonium salt compound and resist composition and pattern forming method using the same

NEC CORP11 citations74
US6559337B2May 6, 2003

(Meth)acrylate, polymer, photoresist composition, and pattern forming process making use of the composition

NEC CORP10 citations74
US6469197B1Oct 22, 2002

Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same

NEC CORP8 citations74
US6391529B2May 21, 2002

(Meth)acrylate, polymer photoresist composition, and pattern forming process making use of the composition

NEC CORP12 citations74
US6287746B1Sep 11, 2001

Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask

NEC CORP12 citations74
US6248499B1Jun 19, 2001

(Meth)acrylate, polymer, photoresist composition, and pattern forming process making use of the composition

NEC CORP6 citations74
US5439990AAug 8, 1995

Photolytic polymer and photoresist composition

NEC CORP8 citations74
US6322908B1Nov 27, 2001

Organic electroluminescent device

NEC CORP13 citations73

DENSO CORP

9 patents

NIPPON DENSO CO

2 patents

YAMADA ATSUSHI

1 patent

NIPPON OILS & FATS CO LTD

1 patent

Showing the top 50 of 74 patents by PatentIndex Score.