Inventor

FUJINAGA MASATO

JP15 patents

⚠️ This page may combine multiple inventors who share the name “FUJINAGA MASATO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

12 patents

US5471403ANov 28, 1995

Method for predicting the three-dimensional topography of surfaces of semiconductor devices after reflow processing

MITSUBISHI ELECTRIC CORP207 citations98

US6396113B1May 28, 2002

Active trench isolation structure to prevent punch-through and junction leakage

MITSUBISHI ELECTRIC CORP28 citations92

US6355387B1Mar 12, 2002

Method of making a mask pattern

MITSUBISHI ELECTRIC CORP38 citations92

US5502643AMar 26, 1996

Method of and an apparatus for setting up parameters which are used to manufacture a semiconductor device

MITSUBISHI ELECTRIC CORP35 citations92

US5307296AApr 26, 1994

Method of simulating semiconductor manufacture with process functions according to user application

MITSUBISHI ELECTRIC CORP12 citations73

US5812435ASep 22, 1998

Shape simulation method allowing simulation of processed shape during steps of manufacturing a semiconductor device in a short period of time

MITSUBISHI ELECTRIC CORP13 citations73

US5293557AMar 8, 1994

Method of describing a surface of an object after processing

MITSUBISHI ELECTRIC CORP12 citations73

US4905068AFeb 27, 1990

Semiconductor device having interconnection layers of T-shape cross section

MITSUBISHI ELECTRIC CORP16 citations73

US5416339AMay 16, 1995

Semiconductor device having electrode for collecting electric charge in channel region

MITSUBISHI ELECTRIC CORP2 citations61

RENESAS TECH CORP

3 patents

US6670711B2Dec 30, 2003

Semiconductor device including low dielectric constant insulating film formed on upper and side surfaces of the gate electrode

RENESAS TECH CORP1 citations52

US7365433B2Apr 29, 2008

High-frequency semiconductor device and method of manufacturing the same

RENESAS TECH CORP0 citations51

US7095118B2Aug 22, 2006

High-Frequency semiconductor device with noise elimination characteristic