Inventor
SHEU JINN-KONG
TW22 patents
⚠️ This page may combine multiple inventors who share the name “SHEU JINN-KONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SOUTH EPITAXY CORP
9 patentsUS6914268B2Jul 5, 2005
LED device, flip-chip LED package and light reflecting structure
SOUTH EPITAXY CORP119 citations97
US6593597B2Jul 15, 2003
Group III-V element-based LED having ESD protection capacity
SOUTH EPITAXY CORP151 citations97
US7482696B2Jan 27, 2009
Light-emitting diode package structure
SOUTH EPITAXY CORP51 citations93
US7151281B2Dec 19, 2006
Light-emitting diode structure with electrostatic discharge protection
SOUTH EPITAXY CORP21 citations92
US6686610B2Feb 3, 2004
Light emitting diode
SOUTH EPITAXY CORP33 citations92
US6712478B2Mar 30, 2004
Light emitting diode
SOUTH EPITAXY CORP17 citations82
US6559482B1May 6, 2003
III-N compound semiconductor bipolar transistor structure and method of manufacture
SOUTH EPITAXY CORP7 citations73
US7358173B2Apr 15, 2008
Bumping process of light emitting diode
SOUTH EPITAXY CORP3 citations62
US7205648B2Apr 17, 2007
Flip-chip light emitting diode package structure
SOUTH EPITAXY CORP6 citations62
UNIV NAT CENTRAL
5 patentsUS7271418B2Sep 18, 2007
Semiconductor apparatus for white light generation and amplification
UNIV NAT CENTRAL3 citations62
US7674642B2Mar 9, 2010
Method of fabricating linear cascade high-speed green light emitting diode
UNIV NAT CENTRAL2 citations59
US7622788B2Nov 24, 2009
GaN heterojunction bipolar transistor with a p-type strained InGaN base layer
UNIV NAT CENTRAL4 citations58
US7456436B2Nov 25, 2008
LED device having reduced spectrum
UNIV NAT CENTRAL5 citations58
US7759172B2Jul 20, 2010
Method of forming a planar combined structure of a bipolar junction transistor and n-type and p-type metal semiconductor field-effect transistors and method for forming the same
UNIV NAT CENTRAL0 citations37