Inventor
LEE TONG-HSIN
TW19 patents
⚠️ This page may combine multiple inventors who share the name “LEE TONG-HSIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED SILICON INC
10 patentsUS6169017B1Jan 2, 2001
Method to increase contact area
UNITED SILICON INC33 citations92
US6127228AOct 3, 2000
Method of forming buried bit line
UNITED SILICON INC24 citations92
US6069032AMay 30, 2000
Salicide process
UNITED SILICON INC32 citations92
US6093600AJul 25, 2000
Method of fabricating a dynamic random-access memory device
UNITED SILICON INC24 citations91
US6150237ANov 21, 2000
Method of fabricating STI
UNITED SILICON INC19 citations84
US6214741B1Apr 10, 2001
Method of fabricating a bit line of flash memory
UNITED SILICON INC10 citations73
US6060361AMay 9, 2000
Method for preventing dopant diffusion in dual gate device
UNITED SILICON INC14 citations73
US5932333AAug 3, 1999
Method for manufacturing charge storage electrode
UNITED SILICON INC6 citations62
US6133091AOct 17, 2000
Method of fabricating a lower electrode of capacitor
UNITED SILICON INC1 citations50
US6043154AMar 28, 2000
Method for manufacturing charge storage electrode
UNITED SILICON INC0 citations41
UNITED MICROELECTRONICS CORP
9 patentsUS6251737B1Jun 26, 2001
Method of increasing gate surface area for depositing silicide material
UNITED MICROELECTRONICS CORP25 citations92
US6174782B1Jan 16, 2001
Method of fabricating lower electrode of capacitor
UNITED MICROELECTRONICS CORP32 citations92
US6090698AJul 18, 2000
Fabrication method for an insulation structure having a low dielectric constant
UNITED MICROELECTRONICS CORP38 citations92
US6228756B1May 8, 2001
Method of manufacturing inter-metal dielectric layer
UNITED MICROELECTRONICS CORP11 citations73
US6534354B1Mar 18, 2003
Method of manufacturing MOS transistor with fluorine implantation at a low energy
UNITED MICROELECTRONICS CORP9 citations72
US6300238B1Oct 9, 2001
Method of fabricating node contact opening
UNITED MICROELECTRONICS CORP12 citations72
US6664172B2Dec 16, 2003
Method of forming a MOS transistor with improved threshold voltage stability
UNITED MICROELECTRONICS CORP2 citations62
US6569726B1May 27, 2003
Method of manufacturing MOS transistor with fluoride implantation on silicon nitride etching stop layer
UNITED MICROELECTRONICS CORP2 citations61
US6635537B2Oct 21, 2003
Method of fabricating gate oxide
UNITED MICROELECTRONICS CORP6 citations59