Inventor

LIN YAI-FEN

TW67 patents

Patents

50 patents

US6380583B1Apr 30, 2002

Method to increase coupling ratio of source to floating gate in split-gate flash

TAIWAN SEMICONDUCTOR MFG46 citations96

US6228695B1May 8, 2001

Method to fabricate split-gate with self-aligned source and self-aligned floating gate to control gate

TAIWAN SEMICONDUCTOR MFG76 citations96

US6159801ADec 12, 2000

Method to increase coupling ratio of source to floating gate in split-gate flash

TAIWAN SEMICONDUCTOR MFG84 citations96

US6153494ANov 28, 2000

Method to increase the coupling ratio of word line to floating gate by lateral coupling in stacked-gate flash

TAIWAN SEMICONDUCTOR MFG70 citations96

US6117733ASep 12, 2000

Method to increase coupling ratio of source to floating gate in split-gate flash

TAIWAN SEMICONDUCTOR MFG28 citations93

US6249454B1Jun 19, 2001

Split-gate flash cell for virtual ground architecture

TAIWAN SEMICONDUCTOR MFG23 citations93

US6242308B1Jun 5, 2001

Method of forming poly tip to improve erasing and programming speed split gate flash

TAIWAN SEMICONDUCTOR MFG21 citations93

US6214662B1Apr 10, 2001

Forming self-align source line for memory array

TAIWAN SEMICONDUCTOR MFG27 citations93

US6174772B1Jan 16, 2001

Optimal process flow of fabricating nitride spacer without inter-poly oxide damage in split gate flash

TAIWAN SEMICONDUCTOR MFG16 citations93

US6165845ADec 26, 2000

Method to fabricate poly tip in split-gate flash

TAIWAN SEMICONDUCTOR MFG29 citations93

US6130132AOct 10, 2000

Clean process for manufacturing of split-gate flash memory device having floating gate electrode with sharp peak

TAIWAN SEMICONDUCTOR MFG29 citations93

US6127229AOct 3, 2000

Process of forming an EEPROM device having a split gate

TAIWAN SEMICONDUCTOR MFG36 citations93

US6093608AJul 25, 2000

Source side injection programming and tip erasing P-channel split gate flash memory cell

TAIWAN SEMICONDUCTOR MFG18 citations93

US6005809ADec 21, 1999

Program and erase method for a split gate flash EEPROM

TAIWAN SEMICONDUCTOR MFG33 citations93

US5976927ANov 2, 1999

Two mask method for reducing field oxide encroachment in memory arrays

TAIWAN SEMICONDUCTOR MFG23 citations93

US5858840AJan 12, 1999

Method of forming sharp beak of poly by nitrogen implant to improve erase speed for split-gate flash

TAIWAN SEMICONDUCTOR MFG37 citations93

US6753569B2Jun 22, 2004

Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation

TAIWAN SEMICONDUCTOR MFG18 citations92

US6538277B2Mar 25, 2003

Split-gate flash cell

TAIWAN SEMICONDUCTOR MFG23 citations92

US6358796B1Mar 19, 2002

Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation

TAIWAN SEMICONDUCTOR MFG46 citations92

US6312989B1Nov 6, 2001

Structure with protruding source in split-gate flash

TAIWAN SEMICONDUCTOR MFG43 citations92

US6309928B1Oct 30, 2001

Split-gate flash cell

TAIWAN SEMICONDUCTOR MFG25 citations92

US6246089B1Jun 12, 2001

P-channel EEPROM devices

TAIWAN SEMICONDUCTOR MFG20 citations92

US6229176B1May 8, 2001

Split gate flash with step poly to improve program speed

TAIWAN SEMICONDUCTOR MFG37 citations92

US6124609ASep 26, 2000

Split gate flash memory with buried source to shrink cell dimension and increase coupling ratio

TAIWAN SEMICONDUCTOR MFG22 citations92

US6090668AJul 18, 2000

Method to fabricate sharp tip of poly in split gate flash

TAIWAN SEMICONDUCTOR MFG34 citations92

US6060360AMay 9, 2000

Method of manufacture of P-channel EEprom and flash EEprom devices

TAIWAN SEMICONDUCTOR MFG37 citations92

US6046086AApr 4, 2000

Method to improve the capacity of data retention and increase the coupling ratio of source to floating gate in split-gate flash

TAIWAN SEMICONDUCTOR MFG35 citations92

US6017795AJan 25, 2000

Method of fabricating buried source to shrink cell dimension and increase coupling ratio in split-gate flash

TAIWAN SEMICONDUCTOR MFG37 citations92

US5970371AOct 19, 1999

Method of forming sharp beak of poly to improve erase speed in split-gate flash EEPROM

TAIWAN SEMICONDUCTOR MFG31 citations92

US5879992AMar 9, 1999

Method of fabricating step poly to improve program speed in split gate flash

TAIWAN SEMICONDUCTOR MFG38 citations92

US6093607AJul 25, 2000

Method of forming sharp beak of poly by oxygen/fluorine implant to improve erase speed for split-gate flash

TAIWAN SEMICONDUCTOR MFG22 citations91

US6259131B1Jul 10, 2001

Poly tip and self aligned source for split-gate flash cell

TAIWAN SEMICONDUCTOR MFG37 citations90

US6333228B1Dec 25, 2001

Method to improve the control of bird's beak profile of poly in split gate flash

TAIWAN SEMICONDUCTOR MFG19 citations84

US5940706AAug 17, 1999

Process for preventing misalignment in split-gate flash memory cell

TAIWAN SEMICONDUCTOR MFG20 citations84

US6674118B2Jan 6, 2004

PIP capacitor for split-gate flash process

TAIWAN SEMICONDUCTOR MFG13 citations83

US6277686B1Aug 21, 2001

PIP capacitor for split-gate flash process

TAIWAN SEMICONDUCTOR MFG16 citations83

US5972753AOct 26, 1999

Method of self-align cell edge implant to reduce leakage current and improve program speed in split-gate flash

TAIWAN SEMICONDUCTOR MFG16 citations82

US5950087ASep 7, 1999

Method to make self-aligned source etching available in split-gate flash

TAIWAN SEMICONDUCTOR MFG20 citations82

US7417278B2Aug 26, 2008

Method to increase coupling ratio of source to floating gate in split-gate flash

TAIWAN SEMICONDUCTOR MFG4 citations74

US7001809B2Feb 21, 2006

Method to increase coupling ratio of source to floating gate in split-gate flash

TAIWAN SEMICONDUCTOR MFG7 citations74

US6635922B1Oct 21, 2003

Method to fabricate poly tip in split gate flash

TAIWAN SEMICONDUCTOR MFG11 citations74

US6573555B1Jun 3, 2003

Source side injection programming and tip erasing P-channel split gate flash memory cell

TAIWAN SEMICONDUCTOR MFG8 citations74

US6534821B2Mar 18, 2003

Structure with protruding source in split-gate flash

TAIWAN SEMICONDUCTOR MFG8 citations74

US6504206B2Jan 7, 2003

Split gate flash cell for multiple storage

TAIWAN SEMICONDUCTOR MFG8 citations74

US6465841B1Oct 15, 2002

Split gate flash memory device having nitride spacer to prevent inter-poly oxide damage

TAIWAN SEMICONDUCTOR MFG13 citations74

Showing the top 50 of 67 patents by PatentIndex Score.

LIN YAI-FEN

Patents

Method to increase coupling ratio of source to floating gate in split-gate flash

Method to fabricate split-gate with self-aligned source and self-aligned floating gate to control gate

Method to increase coupling ratio of source to floating gate in split-gate flash

Method to increase the coupling ratio of word line to floating gate by lateral coupling in stacked-gate flash

Poly tip formation and self-align source process for split-gate flash cell

Stacked-gate flash memory cell with folding gate and increased coupling ratio

Split-gate flash memory device having floating gate electrode with sharp peak

Split gate flash cell for multiple storage

Poly tip formation and self-align source process for split-gate flash cell

Method to increase coupling ratio of source to floating gate in split-gate flash

Split-gate flash cell for virtual ground architecture

Method of forming poly tip to improve erasing and programming speed split gate flash

Forming self-align source line for memory array

Optimal process flow of fabricating nitride spacer without inter-poly oxide damage in split gate flash

Method to fabricate poly tip in split-gate flash

Clean process for manufacturing of split-gate flash memory device having floating gate electrode with sharp peak

Process of forming an EEPROM device having a split gate

Source side injection programming and tip erasing P-channel split gate flash memory cell

Program and erase method for a split gate flash EEPROM

Two mask method for reducing field oxide encroachment in memory arrays

Method of forming sharp beak of poly by nitrogen implant to improve erase speed for split-gate flash

Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation

Split-gate flash cell

Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation

Structure with protruding source in split-gate flash

Split-gate flash cell

P-channel EEPROM devices

Split gate flash with step poly to improve program speed

Split gate flash memory with buried source to shrink cell dimension and increase coupling ratio

Method to fabricate sharp tip of poly in split gate flash

Method of manufacture of P-channel EEprom and flash EEprom devices

Method to improve the capacity of data retention and increase the coupling ratio of source to floating gate in split-gate flash

Method of fabricating buried source to shrink cell dimension and increase coupling ratio in split-gate flash

Method of forming sharp beak of poly to improve erase speed in split-gate flash EEPROM

Method of fabricating step poly to improve program speed in split gate flash

Method of forming sharp beak of poly by oxygen/fluorine implant to improve erase speed for split-gate flash

Poly tip and self aligned source for split-gate flash cell

Method to improve the control of bird&#39;s beak profile of poly in split gate flash

Process for preventing misalignment in split-gate flash memory cell

PIP capacitor for split-gate flash process

PIP capacitor for split-gate flash process

Method of self-align cell edge implant to reduce leakage current and improve program speed in split-gate flash

Method to make self-aligned source etching available in split-gate flash

Method to increase coupling ratio of source to floating gate in split-gate flash

Method to increase coupling ratio of source to floating gate in split-gate flash

Method to fabricate poly tip in split gate flash

Source side injection programming and tip erasing P-channel split gate flash memory cell

Structure with protruding source in split-gate flash

Split gate flash cell for multiple storage

Split gate flash memory device having nitride spacer to prevent inter-poly oxide damage

Method to improve the control of bird's beak profile of poly in split gate flash