Inventor
HSU CHENG-YUAN
TW46 patents
⚠️ This page may combine multiple inventors who share the name “HSU CHENG-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
POWERCHIP SEMICONDUCTOR CORP
28 patentsUS6635533B1Oct 21, 2003
Method of fabricating flash memory
POWERCHIP SEMICONDUCTOR CORP100 citations98
US7005699B2Feb 28, 2006
NAND flash memory cell row
POWERCHIP SEMICONDUCTOR CORP23 citations93
US6838343B2Jan 4, 2005
Flash memory with self-aligned split gate and methods for fabricating and for operating the same
POWERCHIP SEMICONDUCTOR CORP21 citations93
US6653183B2Nov 25, 2003
Single-poly EPROM and method for forming the same
POWERCHIP SEMICONDUCTOR CORP18 citations93
US7166513B2Jan 23, 2007
Manufacturing method a flash memory cell array
POWERCHIP SEMICONDUCTOR CORP33 citations92
US6875660B2Apr 5, 2005
Method of manufacturing high coupling ratio flash memory having sidewall spacer floating gate electrode
POWERCHIP SEMICONDUCTOR CORP30 citations92
US6794710B2Sep 21, 2004
Split-gate flash memory structure and method of manufacture
POWERCHIP SEMICONDUCTOR CORP30 citations92
US6774428B1Aug 10, 2004
Flash memory structure and operating method thereof
POWERCHIP SEMICONDUCTOR CORP18 citations92
US6737700B1May 18, 2004
Non-volatile memory cell structure and method for manufacturing thereof
POWERCHIP SEMICONDUCTOR CORP17 citations92
US6914826B2Jul 5, 2005
Flash memory structure and operating method thereof
POWERCHIP SEMICONDUCTOR CORP16 citations84
US7057940B2Jun 6, 2006
Flash memory cell, flash memory cell array and manufacturing method thereof
POWERCHIP SEMICONDUCTOR CORP18 citations83
US6706602B2Mar 16, 2004
Manufacturing method of flash memory
POWERCHIP SEMICONDUCTOR CORP19 citations83
US6917070B2Jul 12, 2005
Single-poly EPROM and method for forming the same
POWERCHIP SEMICONDUCTOR CORP6 citations74
US6765260B1Jul 20, 2004
Flash memory with self-aligned split gate and methods for fabricating and for operating the same
POWERCHIP SEMICONDUCTOR CORP8 citations74
US7436707B2Oct 14, 2008
Flash memory cell structure and operating method thereof
POWERCHIP SEMICONDUCTOR CORP2 citations63
US7180128B2Feb 20, 2007
Non-volatile memory, non-volatile memory array and manufacturing method thereof
POWERCHIP SEMICONDUCTOR CORP3 citations63
US7061805B2Jun 13, 2006
P-channel NAND flash memory and operating method thereof
POWERCHIP SEMICONDUCTOR CORP5 citations63
US6963105B2Nov 8, 2005
Flash memory cell structure
POWERCHIP SEMICONDUCTOR CORP4 citations63
US6869842B2Mar 22, 2005
Method for manufacturing non-volatile memory cell
POWERCHIP SEMICONDUCTOR CORP4 citations63
US6867099B2Mar 15, 2005
Spilt-gate flash memory structure and method of manufacture
POWERCHIP SEMICONDUCTOR CORP2 citations63
US6855598B2Feb 15, 2005
Flash memory cell including two floating gates and an erasing gate
POWERCHIP SEMICONDUCTOR CORP2 citations62
US7196371B2Mar 27, 2007
Flash memory
POWERCHIP SEMICONDUCTOR CORP4 citations60
US7335940B2Feb 26, 2008
Flash memory and manufacturing method thereof
POWERCHIP SEMICONDUCTOR CORP3 citations59
US7391073B2Jun 24, 2008
Non-volatile memory structure and method of fabricating non-volatile memory
POWERCHIP SEMICONDUCTOR CORP2 citations58
US7485529B2Feb 3, 2009
Method of fabricating non-volatile memory
POWERCHIP SEMICONDUCTOR CORP0 citations52
US7029973B2Apr 18, 2006
Method of fabricating a flash memory cell
POWERCHIP SEMICONDUCTOR CORP1 citations51
US7262096B2Aug 28, 2007
NAND flash memory cell row and manufacturing method thereof
POWERCHIP SEMICONDUCTOR CORP0 citations42
US7239555B1Jul 3, 2007
Erasing method for non-volatile memory
POWERCHIP SEMICONDUCTOR CORP0 citations29
TAIWAN SEMICONDUCTOR MFG
5 patentsUS6358827B1Mar 19, 2002
Method of forming a squared-off, vertically oriented polysilicon spacer gate
TAIWAN SEMICONDUCTOR MFG111 citations94
US6828183B1Dec 7, 2004
Process for high voltage oxide and select gate poly for split-gate flash memory
TAIWAN SEMICONDUCTOR MFG27 citations92
US6569736B1May 27, 2003
Method for fabricating square polysilicon spacers for a split gate flash memory device by multi-step polysilicon etch
TAIWAN SEMICONDUCTOR MFG22 citations90
US6849499B2Feb 1, 2005
Process for flash memory cell
TAIWAN SEMICONDUCTOR MFG2 citations63
US6165867ADec 26, 2000
Method to reduce aspect ratio of DRAM peripheral contact
TAIWAN SEMICONDUCTOR MFG1 citations52
UNITED MICROELECTRONICS CORP
3 patentsUS9431256B2Aug 30, 2016
Semiconductor device and manufacturing method thereof
UNITED MICROELECTRONICS CORP5 citations73
US8921913B1Dec 30, 2014
Floating gate forming process
UNITED MICROELECTRONICS CORP4 citations72
US9117847B2Aug 25, 2015
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations51