Inventor

FAULKNER CARL M

US4 patents

⚠️ This page may combine multiple inventors who share the name “FAULKNER CARL M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ACORN TECH INC

2 patents

US7902029B2Mar 8, 2011

Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor

ACORN TECH INC10 citations83

US7816240B2Oct 19, 2010

Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)

ACORN TECH INC14 citations83

GRUPP DANIEL E

1 patent

US8263467B2Sep 11, 2012

Process for fabricating a self-aligned deposited source/drain insulated gate field-effect transistor

GRUPP DANIEL E18 citations91

FAULKNER CARL M

1 patent

US8658523B2Feb 25, 2014

Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source(s) and/or drain(s)

FAULKNER CARL M16 citations88