P

Inventor

MORICEAU HUBERT

FR83 patents
⚠️ This page may combine multiple inventors who share the name “MORICEAU HUBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

COMMISSARIAT ENERGIE ATOMIQUE

34 patents
US6809044B1Oct 26, 2004

Method for making a thin film using pressurization

COMMISSARIAT ENERGIE ATOMIQUE184 citations99
US6756286B1Jun 29, 2004

Method for transferring a thin film comprising a step of generating inclusions

COMMISSARIAT ENERGIE ATOMIQUE263 citations99
US6204079B1Mar 20, 2001

Selective transfer of elements from one support to another support

COMMISSARIAT ENERGIE ATOMIQUE120 citations98
US6403450B1Jun 11, 2002

Heat treatment method for semiconductor substrates

COMMISSARIAT ENERGIE ATOMIQUE101 citations97
US6991995B2Jan 31, 2006

Method of producing a semiconductor structure having at least one support substrate and an ultrathin layer

COMMISSARIAT ENERGIE ATOMIQUE54 citations96
US6974759B2Dec 13, 2005

Method for making a stacked comprising a thin film adhering to a target substrate

COMMISSARIAT ENERGIE ATOMIQUE46 citations96
US6756285B1Jun 29, 2004

Multilayer structure with controlled internal stresses and making same

COMMISSARIAT ENERGIE ATOMIQUE86 citations95
US7902038B2Mar 8, 2011

Detachable substrate with controlled mechanical strength and method of producing same

COMMISSARIAT ENERGIE ATOMIQUE50 citations94
US7713369B2May 11, 2010

Detachable substrate or detachable structure and method for the production thereof

COMMISSARIAT ENERGIE ATOMIQUE48 citations94
US7883994B2Feb 8, 2011

Process for the transfer of a thin film

COMMISSARIAT ENERGIE ATOMIQUE21 citations93
US7229899B2Jun 12, 2007

Process for the transfer of a thin film

COMMISSARIAT ENERGIE ATOMIQUE25 citations93
US6808967B1Oct 26, 2004

Method for producing a buried layer of material in another material

COMMISSARIAT ENERGIE ATOMIQUE23 citations93
US7579259B2Aug 25, 2009

Simplified method of producing an epitaxially grown structure

COMMISSARIAT ENERGIE ATOMIQUE21 citations92
US7494897B2Feb 24, 2009

Method of producing mixed substrates and structure thus obtained

COMMISSARIAT ENERGIE ATOMIQUE29 citations92
US7232739B2Jun 19, 2007

Multifunctional metallic bonding

COMMISSARIAT ENERGIE ATOMIQUE24 citations92
US6821376B1Nov 23, 2004

Method for separating two elements and a device therefor

COMMISSARIAT ENERGIE ATOMIQUE50 citations91
US6724017B2Apr 20, 2004

Method for automatic organization of microstructures or nanostructures and related device obtained

COMMISSARIAT ENERGIE ATOMIQUE25 citations91
US8679946B2Mar 25, 2014

Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate

COMMISSARIAT ENERGIE ATOMIQUE5 citations84
US8609514B2Dec 17, 2013

Process for the transfer of a thin film comprising an inclusion creation step

COMMISSARIAT ENERGIE ATOMIQUE6 citations84
US7781300B2Aug 24, 2010

Method for producing mixed stacked structures, different insulating areas and/or localised vertical electrical conducting areas

COMMISSARIAT ENERGIE ATOMIQUE14 citations84
US7550052B2Jun 23, 2009

Method of producing a complex structure by assembling stressed structures

COMMISSARIAT ENERGIE ATOMIQUE8 citations82
US7541263B2Jun 2, 2009

Method for providing mixed stacked structures, with various insulating zones and/or electrically conducting zones vertically localized

COMMISSARIAT ENERGIE ATOMIQUE8 citations82
US7264996B2Sep 4, 2007

Method for separating wafers bonded together to form a stacked structure

COMMISSARIAT ENERGIE ATOMIQUE7 citations74
US7258743B2Aug 21, 2007

Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure

COMMISSARIAT ENERGIE ATOMIQUE9 citations74
US7189632B2Mar 13, 2007

Multifunctional metallic bonding

COMMISSARIAT ENERGIE ATOMIQUE7 citations74
US7115481B2Oct 3, 2006

Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate

COMMISSARIAT ENERGIE ATOMIQUE10 citations74
US9922954B2Mar 20, 2018

Method for performing direct bonding between two structures

COMMISSARIAT ENERGIE ATOMIQUE2 citations73
US7041227B2May 9, 2006

Method for revealing crystalline defects and/or stress field defects at the molecular adhesion interface of two solid materials

COMMISSARIAT ENERGIE ATOMIQUE8 citations73
US9427948B2Aug 30, 2016

Manufacturing a flexible structure by transfers of layers

COMMISSARIAT ENERGIE ATOMIQUE4 citations72
US10497609B2Dec 3, 2019

Method for direct bonding of substrates including thinning of the edges of at least one of the two substrates

COMMISSARIAT ENERGIE ATOMIQUE1 citations62
US7476595B2Jan 13, 2009

Method for the molecular bonding of microelectronic components to a polymer film

COMMISSARIAT ENERGIE ATOMIQUE2 citations62
US7229897B2Jun 12, 2007

Method for producing a stacked structure

COMMISSARIAT ENERGIE ATOMIQUE6 citations62
US7947564B2May 24, 2011

Method of fabricating a mixed microtechnology structure and a structure obtained thereby

COMMISSARIAT ENERGIE ATOMIQUE3 citations61
US4698281AOct 6, 1987

Garnet-type magnetic material high faraday rotation magnetic film containing such a material and process for the production thereof

COMMISSARIAT ENERGIE ATOMIQUE3 citations61

SOITEC SILICON ON INSULATOR

6 patents

MORICEAU HUBERT

3 patents

ZUSSY MARC

2 patents

CLAVELIER LAURENT

1 patent

LIBRALESSO LAURE

1 patent

COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT

1 patent

FOURNEL FRANCK

1 patent

SIGNAMARCHEIX THOMAS

1 patent

Showing the top 50 of 83 patents by PatentIndex Score.