Inventor
MORICEAU HUBERT
FR83 patents
⚠️ This page may combine multiple inventors who share the name “MORICEAU HUBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
34 patentsUS6809044B1Oct 26, 2004
Method for making a thin film using pressurization
COMMISSARIAT ENERGIE ATOMIQUE184 citations99
US6756286B1Jun 29, 2004
Method for transferring a thin film comprising a step of generating inclusions
COMMISSARIAT ENERGIE ATOMIQUE263 citations99
US6204079B1Mar 20, 2001
Selective transfer of elements from one support to another support
COMMISSARIAT ENERGIE ATOMIQUE120 citations98
US6403450B1Jun 11, 2002
Heat treatment method for semiconductor substrates
COMMISSARIAT ENERGIE ATOMIQUE101 citations97
US6991995B2Jan 31, 2006
Method of producing a semiconductor structure having at least one support substrate and an ultrathin layer
COMMISSARIAT ENERGIE ATOMIQUE54 citations96
US6974759B2Dec 13, 2005
Method for making a stacked comprising a thin film adhering to a target substrate
COMMISSARIAT ENERGIE ATOMIQUE46 citations96
US6756285B1Jun 29, 2004
Multilayer structure with controlled internal stresses and making same
COMMISSARIAT ENERGIE ATOMIQUE86 citations95
US7902038B2Mar 8, 2011
Detachable substrate with controlled mechanical strength and method of producing same
COMMISSARIAT ENERGIE ATOMIQUE50 citations94
US7713369B2May 11, 2010
Detachable substrate or detachable structure and method for the production thereof
COMMISSARIAT ENERGIE ATOMIQUE48 citations94
US7883994B2Feb 8, 2011
Process for the transfer of a thin film
COMMISSARIAT ENERGIE ATOMIQUE21 citations93
US7229899B2Jun 12, 2007
Process for the transfer of a thin film
COMMISSARIAT ENERGIE ATOMIQUE25 citations93
US6808967B1Oct 26, 2004
Method for producing a buried layer of material in another material
COMMISSARIAT ENERGIE ATOMIQUE23 citations93
US7579259B2Aug 25, 2009
Simplified method of producing an epitaxially grown structure
COMMISSARIAT ENERGIE ATOMIQUE21 citations92
US7494897B2Feb 24, 2009
Method of producing mixed substrates and structure thus obtained
COMMISSARIAT ENERGIE ATOMIQUE29 citations92
US7232739B2Jun 19, 2007
Multifunctional metallic bonding
COMMISSARIAT ENERGIE ATOMIQUE24 citations92
US6821376B1Nov 23, 2004
Method for separating two elements and a device therefor
COMMISSARIAT ENERGIE ATOMIQUE50 citations91
US6724017B2Apr 20, 2004
Method for automatic organization of microstructures or nanostructures and related device obtained
COMMISSARIAT ENERGIE ATOMIQUE25 citations91
US8679946B2Mar 25, 2014
Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate
COMMISSARIAT ENERGIE ATOMIQUE5 citations84
US8609514B2Dec 17, 2013
Process for the transfer of a thin film comprising an inclusion creation step
COMMISSARIAT ENERGIE ATOMIQUE6 citations84
US7781300B2Aug 24, 2010
Method for producing mixed stacked structures, different insulating areas and/or localised vertical electrical conducting areas
COMMISSARIAT ENERGIE ATOMIQUE14 citations84
US7550052B2Jun 23, 2009
Method of producing a complex structure by assembling stressed structures
COMMISSARIAT ENERGIE ATOMIQUE8 citations82
US7541263B2Jun 2, 2009
Method for providing mixed stacked structures, with various insulating zones and/or electrically conducting zones vertically localized
COMMISSARIAT ENERGIE ATOMIQUE8 citations82
US7264996B2Sep 4, 2007
Method for separating wafers bonded together to form a stacked structure
COMMISSARIAT ENERGIE ATOMIQUE7 citations74
US7258743B2Aug 21, 2007
Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure
COMMISSARIAT ENERGIE ATOMIQUE9 citations74
US7189632B2Mar 13, 2007
Multifunctional metallic bonding
COMMISSARIAT ENERGIE ATOMIQUE7 citations74
US7115481B2Oct 3, 2006
Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate
COMMISSARIAT ENERGIE ATOMIQUE10 citations74
US9922954B2Mar 20, 2018
Method for performing direct bonding between two structures
COMMISSARIAT ENERGIE ATOMIQUE2 citations73
US7041227B2May 9, 2006
Method for revealing crystalline defects and/or stress field defects at the molecular adhesion interface of two solid materials
COMMISSARIAT ENERGIE ATOMIQUE8 citations73
US9427948B2Aug 30, 2016
Manufacturing a flexible structure by transfers of layers
COMMISSARIAT ENERGIE ATOMIQUE4 citations72
US10497609B2Dec 3, 2019
Method for direct bonding of substrates including thinning of the edges of at least one of the two substrates
COMMISSARIAT ENERGIE ATOMIQUE1 citations62
US7476595B2Jan 13, 2009
Method for the molecular bonding of microelectronic components to a polymer film
COMMISSARIAT ENERGIE ATOMIQUE2 citations62
US7229897B2Jun 12, 2007
Method for producing a stacked structure
COMMISSARIAT ENERGIE ATOMIQUE6 citations62
US7947564B2May 24, 2011
Method of fabricating a mixed microtechnology structure and a structure obtained thereby
COMMISSARIAT ENERGIE ATOMIQUE3 citations61
US4698281AOct 6, 1987
Garnet-type magnetic material high faraday rotation magnetic film containing such a material and process for the production thereof
COMMISSARIAT ENERGIE ATOMIQUE3 citations61
SOITEC SILICON ON INSULATOR
6 patentsUS7268060B2Sep 11, 2007
Method for fabricating a substrate with useful layer on high resistivity support
SOITEC SILICON ON INSULATOR37 citations93
US7407867B2Aug 5, 2008
Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate
SOITEC SILICON ON INSULATOR19 citations92
US8628674B2Jan 14, 2014
Method for trimming a structure obtained by the assembly of two plates
SOITEC SILICON ON INSULATOR6 citations84
US6991944B2Jan 31, 2006
Surface treatment for multi-layer wafers formed from layers of materials chosen from among semiconducting materials
SOITEC SILICON ON INSULATOR6 citations70
US7776716B2Aug 17, 2010
Method for fabricating a semiconductor on insulator wafer
SOITEC SILICON ON INSULATOR2 citations61
US7645392B2Jan 12, 2010
Methods for preparing a bonding surface of a semiconductor wafer
SOITEC SILICON ON INSULATOR5 citations61
MORICEAU HUBERT
3 patentsUS8481409B2Jul 9, 2013
Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate
MORICEAU HUBERT5 citations83
US8470712B2Jun 25, 2013
Process for the transfer of a thin film comprising an inclusion creation step
MORICEAU HUBERT4 citations73
US9219004B2Dec 22, 2015
Method of fabricating polymer film in the cavity of a wafer
MORICEAU HUBERT2 citations60
ZUSSY MARC
2 patentsCLAVELIER LAURENT
1 patentLIBRALESSO LAURE
1 patentCOMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT
1 patentFOURNEL FRANCK
1 patentSIGNAMARCHEIX THOMAS
1 patentShowing the top 50 of 83 patents by PatentIndex Score.