P

Inventor

ISHIGAKI YOSHIYUKI

JP38 patents
⚠️ This page may combine multiple inventors who share the name “ISHIGAKI YOSHIYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

23 patents
US6236117B1May 22, 2001

Semiconductor memory device including shunt interconnection

MITSUBISHI ELECTRIC CORP22 citations93
US6097103AAug 1, 2000

Semiconductor device having an improved interconnection and method for fabricating the same

MITSUBISHI ELECTRIC CORP20 citations92
US5973548AOct 26, 1999

Internal supply voltage generating circuit for generating internal supply voltage less susceptible to variation of external supply voltage

MITSUBISHI ELECTRIC CORP25 citations92
US5777920AJul 7, 1998

Semiconductor memory device and method of manufacturing the same

MITSUBISHI ELECTRIC CORP32 citations92
US5471085ANov 28, 1995

Semiconductor device with polycrystalline silicon emitter conductive layer

MITSUBISHI ELECTRIC CORP22 citations92
US6268627B1Jul 31, 2001

Semiconductor device having impurity regions with varying impurity concentrations

MITSUBISHI ELECTRIC CORP16 citations84
US5619056AApr 8, 1997

SRAM semiconductor device

MITSUBISHI ELECTRIC CORP13 citations82
US6404024B1Jun 11, 2002

Semiconductor device

MITSUBISHI ELECTRIC CORP7 citations74
US6271569B1Aug 7, 2001

Semiconductor device having memory cells and method of manufacturing the same

MITSUBISHI ELECTRIC CORP12 citations74
US6242297B1Jun 5, 2001

Semiconductor device having an improved interconnection and method for fabricating the same

MITSUBISHI ELECTRIC CORP6 citations74
US6198149B1Mar 6, 2001

Semiconductor device having novel insulating film structure

MITSUBISHI ELECTRIC CORP10 citations74
US5994719ANov 30, 1999

SRAM semiconductor device

MITSUBISHI ELECTRIC CORP5 citations74
US5841153ANov 24, 1998

SRAM semiconductor device

MITSUBISHI ELECTRIC CORP12 citations74
US5659193AAug 19, 1997

Semiconductor device and method for manufacturing the same

MITSUBISHI ELECTRIC CORP17 citations74
US5600589AFeb 4, 1997

Static random access memory

MITSUBISHI ELECTRIC CORP12 citations74
US5245209ASep 14, 1993

Semiconductor device including complementary insulating gate field effect transistors and bipolar transistors in semiconductor substrate

MITSUBISHI ELECTRIC CORP13 citations74
US5480816AJan 2, 1996

Method of fabricating a bipolar transistor having a link base

MITSUBISHI ELECTRIC CORP18 citations73
US5350939ASep 27, 1994

Semiconductor device and method of manufacturing thereof

MITSUBISHI ELECTRIC CORP14 citations73
US5319234AJun 7, 1994

C-BiCMOS semiconductor device

MITSUBISHI ELECTRIC CORP16 citations73
US5731618AMar 24, 1998

Semiconductor device and method of manufacturing thereof

MITSUBISHI ELECTRIC CORP4 citations63
US5355009AOct 11, 1994

Semiconductor device and method of fabricating same

MITSUBISHI ELECTRIC CORP4 citations62
US6632716B2Oct 14, 2003

Semiconductor device and manufacturing method thereof

MITSUBISHI ELECTRIC CORP0 citations52
US6147387ANov 14, 2000

Static random access memory

MITSUBISHI ELECTRIC CORP0 citations52

RENESAS TECH CORP

11 patents

TOMITA HIDEMOTO

2 patents

RENESAS ELECTRONICS CORP

2 patents