Inventor
TANG DENNY D
US31 patents
⚠️ This page may combine multiple inventors who share the name “TANG DENNY D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
13 patentsUS5343422AAug 30, 1994
Nonvolatile magnetoresistive storage device using spin valve effect
IBM154 citations97
US5452165ASep 19, 1995
Close packed magnetic head linear array
IBM78 citations96
US5117271AMay 26, 1992
Low capacitance bipolar junction transistor and fabrication process therfor
IBM56 citations96
US4473598ASep 25, 1984
Method of filling trenches with silicon and structures
IBM74 citations95
US5298786AMar 29, 1994
SOI lateral bipolar transistor with edge-strapped base contact and method of fabricating same
IBM43 citations92
US5089724AFeb 18, 1992
High-speed low-power ECL/NTL circuits with AC-coupled complementary push-pull output stage
IBM22 citations92
US5106767AApr 21, 1992
Process for fabricating low capacitance bipolar junction transistor
IBM56 citations91
US4446476AMay 1, 1984
Integrated circuit having a sublayer electrical contact and fabrication thereof
IBM29 citations91
US4338622AJul 6, 1982
Self-aligned semiconductor circuits and process therefor
IBM24 citations80
US4425574AJan 10, 1984
Buried injector memory cell formed from vertical complementary bipolar transistor circuits and method of fabrication therefor
IBM16 citations74
US4274891AJun 23, 1981
Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition
IBM15 citations74
US4939563AJul 3, 1990
Double carrier deflection high sensitivity magnetic sensor
IBM17 citations73
US4864539ASep 5, 1989
Radiation hardened bipolar static RAM cell
IBM13 citations72
TAIWAN SEMICONDUCTOR MFG
12 patentsUS6985383B2Jan 10, 2006
Reference generator for multilevel nonlinear resistivity memory storage elements
TAIWAN SEMICONDUCTOR MFG48 citations93
US7221584B2May 22, 2007
MRAM cell having shared configuration
TAIWAN SEMICONDUCTOR MFG27 citations92
US7170775B2Jan 30, 2007
MRAM cell with reduced write current
TAIWAN SEMICONDUCTOR MFG41 citations92
US7166881B2Jan 23, 2007
Multi-sensing level MRAM structures
TAIWAN SEMICONDUCTOR MFG41 citations92
US7319262B2Jan 15, 2008
MRAM over sloped pillar
TAIWAN SEMICONDUCTOR MFG10 citations84
US7173846B2Feb 6, 2007
Magnetic RAM and array architecture using a two transistor, one MTJ cell
TAIWAN SEMICONDUCTOR MFG10 citations84
US7099176B2Aug 29, 2006
Non-orthogonal write line structure in MRAM
TAIWAN SEMICONDUCTOR MFG11 citations84
US6909628B2Jun 21, 2005
High density magnetic RAM and array architecture using a one transistor, one diode, and one MTJ cell
TAIWAN SEMICONDUCTOR MFG17 citations84
US7205632B2Apr 17, 2007
Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
TAIWAN SEMICONDUCTOR MFG1 citations52
US7151304B2Dec 19, 2006
Method to reduce switch threshold of soft magnetic films
TAIWAN SEMICONDUCTOR MFG0 citations52
US6890767B2May 10, 2005
Method to reduce switch threshold of soft magnetic films
TAIWAN SEMICONDUCTOR MFG0 citations52
US6847061B2Jan 25, 2005
Elimination of implant damage during manufacture of HBT
TAIWAN SEMICONDUCTOR MFG0 citations48
HITACHI GLOBAL STORAGE TECH
5 patentsUS7079355B2Jul 18, 2006
Magnetic transducer with a write head having a multi-layer coil
HITACHI GLOBAL STORAGE TECH24 citations91
US6804879B2Oct 19, 2004
Method of fabricating a magnetic transducer with a write head having a multi-layer coil
HITACHI GLOBAL STORAGE TECH32 citations91
US6901653B2Jun 7, 2005
Process for manufacturing a magnetic head coil structure
HITACHI GLOBAL STORAGE TECH5 citations74
US7313858B2Jan 1, 2008
Method for manufacturing a magnetic head coil structure and/or pole tip structure
HITACHI GLOBAL STORAGE TECH1 citations63
US7304821B2Dec 4, 2007
Magnetic head coil structure and method for manufacturing the same
HITACHI GLOBAL STORAGE TECH0 citations52