P

Inventor

KAVALIEROS JACK

US214 patents
⚠️ This page may combine multiple inventors who share the name “KAVALIEROS JACK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

45 patents
US7825437B2Nov 2, 2010

Unity beta ratio tri-gate transistor static random access memory (SRAM)

INTEL CORP166 citations99
US7531437B2May 12, 2009

Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material

INTEL CORP195 citations99
US7518196B2Apr 14, 2009

Field effect transistor with narrow bandgap source and drain regions and method of fabrication

INTEL CORP72 citations99
US7358121B2Apr 15, 2008

Tri-gate devices and methods of fabrication

INTEL CORP153 citations99
US7170120B2Jan 30, 2007

Carbon nanotube energy well (CNEW) field effect transistor

INTEL CORP149 citations99
US7126199B2Oct 24, 2006

Multilayer metal gate electrode

INTEL CORP154 citations99
US7005366B2Feb 28, 2006

Tri-gate devices and methods of fabrication

INTEL CORP121 citations99
US6914295B2Jul 5, 2005

Tri-gate devices and methods of fabrication

INTEL CORP71 citations99
US6858478B2Feb 22, 2005

Tri-gate devices and methods of fabrication

INTEL CORP629 citations99
US6696345B2Feb 24, 2004

Metal-gate electrode for CMOS transistor applications

INTEL CORP164 citations99
US6653700B2Nov 25, 2003

Transistor structure and method of fabrication

INTEL CORP144 citations99
US7898041B2Mar 1, 2011

Block contact architectures for nanoscale channel transistors

INTEL CORP113 citations98
US7569443B2Aug 4, 2009

Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate

INTEL CORP72 citations98
US7547637B2Jun 16, 2009

Methods for patterning a semiconductor film

INTEL CORP52 citations98
US7494862B2Feb 24, 2009

Methods for uniform doping of non-planar transistor structures

INTEL CORP70 citations98
US7390709B2Jun 24, 2008

Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode

INTEL CORP71 citations98
US7381608B2Jun 3, 2008

Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode

INTEL CORP85 citations98
US7361958B2Apr 22, 2008

Nonplanar transistors with metal gate electrodes

INTEL CORP86 citations98
US7279375B2Oct 9, 2007

Block contact architectures for nanoscale channel transistors

INTEL CORP93 citations98
US7220635B2May 22, 2007

Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer

INTEL CORP78 citations98
US7217611B2May 15, 2007

Methods for integrating replacement metal gate structures

INTEL CORP70 citations98
US7208361B2Apr 24, 2007

Replacement gate process for making a semiconductor device that includes a metal gate electrode

INTEL CORP128 citations98
US7157378B2Jan 2, 2007

Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode

INTEL CORP107 citations98
US7153784B2Dec 26, 2006

Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode

INTEL CORP86 citations98
US7153734B2Dec 26, 2006

CMOS device with metal and silicide gate electrodes and a method for making it

INTEL CORP64 citations98
US7148548B2Dec 12, 2006

Semiconductor device with a high-k gate dielectric and a metal gate electrode

INTEL CORP117 citations98
US7064066B1Jun 20, 2006

Method for making a semiconductor device having a high-k gate dielectric and a titanium carbide gate electrode

INTEL CORP65 citations98
US6974733B2Dec 13, 2005

Double-gate transistor with enhanced carrier mobility

INTEL CORP95 citations98
US6970373B2Nov 29, 2005

Method and apparatus for improving stability of a 6T CMOS SRAM cell

INTEL CORP84 citations98
US7074680B2Jul 11, 2006

Method for making a semiconductor device having a high-k gate dielectric

INTEL CORP64 citations97
US6960517B2Nov 1, 2005

N-gate transistor

INTEL CORP72 citations97
US7893506B2Feb 22, 2011

Field effect transistor with narrow bandgap source and drain regions and method of fabrication

INTEL CORP35 citations96
US7560756B2Jul 14, 2009

Tri-gate devices and methods of fabrication

INTEL CORP31 citations96
US7514346B2Apr 7, 2009

Tri-gate devices and methods of fabrication

INTEL CORP28 citations96
US7504678B2Mar 17, 2009

Tri-gate devices and methods of fabrication

INTEL CORP35 citations96
US7427794B2Sep 23, 2008

Tri-gate devices and methods of fabrication

INTEL CORP39 citations96
US7355281B2Apr 8, 2008

Method for making semiconductor device having a high-k gate dielectric layer and a metal gate electrode

INTEL CORP47 citations96
US7323423B2Jan 29, 2008

Forming high-k dielectric layers on smooth substrates

INTEL CORP49 citations96
US7176090B2Feb 13, 2007

Method for making a semiconductor device that includes a metal gate electrode

INTEL CORP58 citations96
US7138323B2Nov 21, 2006

Planarizing a semiconductor structure to form replacement metal gates

INTEL CORP51 citations96
US7060568B2Jun 13, 2006

Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit

INTEL CORP53 citations96
US6952040B2Oct 4, 2005

Transistor structure and method of fabrication

INTEL CORP45 citations96
US6610615B1Aug 26, 2003

Plasma nitridation for reduced leakage gate dielectric layers

INTEL CORP127 citations96
US11063131B2Jul 13, 2021

Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering

INTEL CORP31 citations94
US7838373B2Nov 23, 2010

Replacement spacers for MOSFET fringe capacitance reduction and processes of making same

INTEL CORP52 citations94

MUKHERJEE NILOY

2 patents

RADOSAVLJEVIC MARKO

1 patent

BRASK JUSTIN K

1 patent

THEN HAN WUI

1 patent

Showing the top 50 of 214 patents by PatentIndex Score.