P

Inventor

KESHAVARZI ALI

US70 patents
⚠️ This page may combine multiple inventors who share the name “KESHAVARZI ALI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

44 patents
US7061806B2Jun 13, 2006

Floating-body memory cell write

INTEL CORP151 citations99
US6903984B1Jun 7, 2005

Floating-body DRAM using write word line for increased retention time

INTEL CORP138 citations99
US6218892B1Apr 17, 2001

Differential circuits employing forward body bias

INTEL CORP249 citations99
US6218895B1Apr 17, 2001

Multiple well transistor circuits having forward body bias

INTEL CORP293 citations99
US7230846B2Jun 12, 2007

Purge-based floating body memory

INTEL CORP118 citations98
US7102951B2Sep 5, 2006

OTP antifuse cell and cell array

INTEL CORP86 citations98
US6593799B2Jul 15, 2003

Circuit including forward body bias from supply voltage and ground nodes

INTEL CORP88 citations98
US6484265B2Nov 19, 2002

Software control of transistor body bias in controlling chip parameters

INTEL CORP132 citations98
US6411156B1Jun 25, 2002

Employing transistor body bias in controlling chip parameters

INTEL CORP97 citations98
US6519176B1Feb 11, 2003

Dual threshold SRAM cell for single-ended sensing

INTEL CORP57 citations96
US6300819B1Oct 9, 2001

Circuit including forward body bias from supply voltage and ground nodes

INTEL CORP53 citations96
US6272666B1Aug 7, 2001

Transistor group mismatch detection and reduction

INTEL CORP66 citations96
US6232827B1May 15, 2001

Transistors providing desired threshold voltage and reduced short channel effects with forward body bias

INTEL CORP57 citations96
US6181608B1Jan 30, 2001

Dual Vt SRAM cell with bitline leakage control

INTEL CORP62 citations96
US6100751AAug 8, 2000

Forward body biased field effect transistor providing decoupling capacitance

INTEL CORP72 citations96
US7859081B2Dec 28, 2010

Capacitor, method of increasing a capacitance area of same, and system containing same

INTEL CORP25 citations93
US7391640B2Jun 24, 2008

2-transistor floating-body dram

INTEL CORP45 citations93
US7280425B2Oct 9, 2007

Dual gate oxide one time programmable (OTP) antifuse cell

INTEL CORP32 citations93
US7167397B2Jan 23, 2007

Apparatus and method for programming a memory array

INTEL CORP50 citations93
US7123500B2Oct 17, 2006

1P1N 2T gain cell

INTEL CORP30 citations93
US7098507B2Aug 29, 2006

Floating-body dynamic random access memory and method of fabrication in tri-gate technology

INTEL CORP32 citations93
US6794630B2Sep 21, 2004

Method and apparatus for adjusting the threshold of a CMOS radiation-measuring circuit

INTEL CORP28 citations92
US7236410B2Jun 26, 2007

Memory cell driver circuits

INTEL CORP14 citations84
US7120072B2Oct 10, 2006

Two transistor gain cell, method, and system

INTEL CORP13 citations84
US7110278B2Sep 19, 2006

Crosspoint memory array utilizing one time programmable antifuse cells

INTEL CORP14 citations84
US7075821B2Jul 11, 2006

Apparatus and method for a one-phase write to a one-transistor memory cell array

INTEL CORP12 citations84
US7031203B2Apr 18, 2006

Floating-body DRAM using write word line for increased retention time

INTEL CORP14 citations84
US6632686B1Oct 14, 2003

Silicon on insulator device design having improved floating body effect

INTEL CORP16 citations84
US7787292B2Aug 31, 2010

Carbon nanotube fuse element

INTEL CORP8 citations83
US6765414B2Jul 20, 2004

Low frequency testing, leakage control, and burn-in control for high-performance digital circuits

INTEL CORP16 citations83
US7321502B2Jan 22, 2008

Non volatile data storage through dielectric breakdown

INTEL CORP10 citations82
US7514746B2Apr 7, 2009

Floating-body dynamic random access memory and method of fabrication in tri-gate technology

INTEL CORP5 citations74
US7102358B2Sep 5, 2006

Overvoltage detection apparatus, method, and system

INTEL CORP6 citations74
US7057927B2Jun 6, 2006

Floating-body dynamic random access memory with purge line

INTEL CORP5 citations74
US7002842B2Feb 21, 2006

Floating-body dynamic random access memory with purge line

INTEL CORP10 citations74
US6828638B2Dec 7, 2004

Decoupling capacitors for thin gate oxides

INTEL CORP9 citations74
US6734498B2May 11, 2004

Insulated channel field effect transistor with an electric field terminal region

INTEL CORP12 citations74
US6683467B1Jan 27, 2004

Method and apparatus for providing rotational burn-in stress testing

INTEL CORP7 citations74
US8004043B2Aug 23, 2011

Logic circuits using carbon nanotube transistors

INTEL CORP6 citations73
US6825687B2Nov 30, 2004

Selective cooling of an integrated circuit for minimizing power loss

INTEL CORP7 citations73
US6459293B1Oct 1, 2002

Multiple parameter testing with improved sensitivity

INTEL CORP13 citations69
US7355246B2Apr 8, 2008

Memory cell without halo implant

INTEL CORP4 citations63
US7295474B2Nov 13, 2007

Operating an information storage cell array

INTEL CORP3 citations63
US7262107B2Aug 28, 2007

Capacitor structure for a logic process

INTEL CORP3 citations63

CYPRESS SEMICONDUCTOR CORP

2 patents

TAIWAN SEMICONDUCTOR MFG

1 patent

DOYLE BRIAN S

1 patent

KESHAVARZI ALI

1 patent

Longitude Flash Memory Solutions Ltd

1 patent

Showing the top 50 of 70 patents by PatentIndex Score.