Inventor
KESHAVARZI ALI
US70 patents
⚠️ This page may combine multiple inventors who share the name “KESHAVARZI ALI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
44 patentsUS7061806B2Jun 13, 2006
Floating-body memory cell write
INTEL CORP151 citations99
US6903984B1Jun 7, 2005
Floating-body DRAM using write word line for increased retention time
INTEL CORP138 citations99
US6218892B1Apr 17, 2001
Differential circuits employing forward body bias
INTEL CORP249 citations99
US6218895B1Apr 17, 2001
Multiple well transistor circuits having forward body bias
INTEL CORP293 citations99
US7230846B2Jun 12, 2007
Purge-based floating body memory
INTEL CORP118 citations98
US7102951B2Sep 5, 2006
OTP antifuse cell and cell array
INTEL CORP86 citations98
US6593799B2Jul 15, 2003
Circuit including forward body bias from supply voltage and ground nodes
INTEL CORP88 citations98
US6484265B2Nov 19, 2002
Software control of transistor body bias in controlling chip parameters
INTEL CORP132 citations98
US6411156B1Jun 25, 2002
Employing transistor body bias in controlling chip parameters
INTEL CORP97 citations98
US6519176B1Feb 11, 2003
Dual threshold SRAM cell for single-ended sensing
INTEL CORP57 citations96
US6300819B1Oct 9, 2001
Circuit including forward body bias from supply voltage and ground nodes
INTEL CORP53 citations96
US6272666B1Aug 7, 2001
Transistor group mismatch detection and reduction
INTEL CORP66 citations96
US6232827B1May 15, 2001
Transistors providing desired threshold voltage and reduced short channel effects with forward body bias
INTEL CORP57 citations96
US6181608B1Jan 30, 2001
Dual Vt SRAM cell with bitline leakage control
INTEL CORP62 citations96
US6100751AAug 8, 2000
Forward body biased field effect transistor providing decoupling capacitance
INTEL CORP72 citations96
US7859081B2Dec 28, 2010
Capacitor, method of increasing a capacitance area of same, and system containing same
INTEL CORP25 citations93
US7391640B2Jun 24, 2008
2-transistor floating-body dram
INTEL CORP45 citations93
US7280425B2Oct 9, 2007
Dual gate oxide one time programmable (OTP) antifuse cell
INTEL CORP32 citations93
US7167397B2Jan 23, 2007
Apparatus and method for programming a memory array
INTEL CORP50 citations93
US7123500B2Oct 17, 2006
1P1N 2T gain cell
INTEL CORP30 citations93
US7098507B2Aug 29, 2006
Floating-body dynamic random access memory and method of fabrication in tri-gate technology
INTEL CORP32 citations93
US6794630B2Sep 21, 2004
Method and apparatus for adjusting the threshold of a CMOS radiation-measuring circuit
INTEL CORP28 citations92
US7236410B2Jun 26, 2007
Memory cell driver circuits
INTEL CORP14 citations84
US7120072B2Oct 10, 2006
Two transistor gain cell, method, and system
INTEL CORP13 citations84
US7110278B2Sep 19, 2006
Crosspoint memory array utilizing one time programmable antifuse cells
INTEL CORP14 citations84
US7075821B2Jul 11, 2006
Apparatus and method for a one-phase write to a one-transistor memory cell array
INTEL CORP12 citations84
US7031203B2Apr 18, 2006
Floating-body DRAM using write word line for increased retention time
INTEL CORP14 citations84
US6632686B1Oct 14, 2003
Silicon on insulator device design having improved floating body effect
INTEL CORP16 citations84
US7787292B2Aug 31, 2010
Carbon nanotube fuse element
INTEL CORP8 citations83
US6765414B2Jul 20, 2004
Low frequency testing, leakage control, and burn-in control for high-performance digital circuits
INTEL CORP16 citations83
US7321502B2Jan 22, 2008
Non volatile data storage through dielectric breakdown
INTEL CORP10 citations82
US7514746B2Apr 7, 2009
Floating-body dynamic random access memory and method of fabrication in tri-gate technology
INTEL CORP5 citations74
US7102358B2Sep 5, 2006
Overvoltage detection apparatus, method, and system
INTEL CORP6 citations74
US7057927B2Jun 6, 2006
Floating-body dynamic random access memory with purge line
INTEL CORP5 citations74
US7002842B2Feb 21, 2006
Floating-body dynamic random access memory with purge line
INTEL CORP10 citations74
US6828638B2Dec 7, 2004
Decoupling capacitors for thin gate oxides
INTEL CORP9 citations74
US6734498B2May 11, 2004
Insulated channel field effect transistor with an electric field terminal region
INTEL CORP12 citations74
US6683467B1Jan 27, 2004
Method and apparatus for providing rotational burn-in stress testing
INTEL CORP7 citations74
US8004043B2Aug 23, 2011
Logic circuits using carbon nanotube transistors
INTEL CORP6 citations73
US6825687B2Nov 30, 2004
Selective cooling of an integrated circuit for minimizing power loss
INTEL CORP7 citations73
US6459293B1Oct 1, 2002
Multiple parameter testing with improved sensitivity
INTEL CORP13 citations69
US7355246B2Apr 8, 2008
Memory cell without halo implant
INTEL CORP4 citations63
US7295474B2Nov 13, 2007
Operating an information storage cell array
INTEL CORP3 citations63
US7262107B2Aug 28, 2007
Capacitor structure for a logic process
INTEL CORP3 citations63
CYPRESS SEMICONDUCTOR CORP
2 patentsTAIWAN SEMICONDUCTOR MFG
1 patentDOYLE BRIAN S
1 patentKESHAVARZI ALI
1 patentLongitude Flash Memory Solutions Ltd
1 patentShowing the top 50 of 70 patents by PatentIndex Score.