Inventor
SOMAN RAVINDRA
US8 patents
Patents
8 patentsUS6812086B2Nov 2, 2004
Method of making a semiconductor transistor
INTEL CORP136 citations98
US7019326B2Mar 28, 2006
Transistor with strain-inducing structure in channel
INTEL CORP35 citations92
US6933589B2Aug 23, 2005
Method of making a semiconductor transistor
INTEL CORP32 citations92
US6927140B2Aug 9, 2005
Method for fabricating a bipolar transistor base
INTEL CORP27 citations92
US6723622B2Apr 20, 2004
Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
INTEL CORP38 citations92
US7005359B2Feb 28, 2006
Bipolar junction transistor with improved extrinsic base region and method of fabrication
INTEL CORP6 citations73
US7517768B2Apr 14, 2009
Method for fabricating a heterojunction bipolar transistor
INTEL CORP6 citations58
US7473591B2Jan 6, 2009
Transistor with strain-inducing structure in channel
INTEL CORP0 citations51