Inventor

JAIPRAKASH VENKATACHALAM C

US41 patents

⚠️ This page may combine multiple inventors who share the name “JAIPRAKASH VENKATACHALAM C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JAIPRAKASH VENKATACHALAM C

NANTERO INC

One-time programmable, non-volatile field effect devices and methods of making same

Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Devices having vertically-disposed nanofabric articles and methods of making the same

NRAM bit selectable two-device nanotube array

Nanotube-on-gate FET structures and applications

Devices having horizontally-disposed nanofabric articles and methods of making the same

Devices having horizontally-disposed nanofabric articles and methods of making the same

Devices having vertically-disposed nanofabric articles and methods of making the same

Devices having vertically-disposed nanofabric articles and methods of making the same

Process for making bit selectable devices having elements made with nanotubes

Process for making byte erasable devices having elements made with nanotubes

Sensor platform using a horizontally oriented nanotube element

Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Sensor platform using a non-horizontally oriented nanotube element

Sensor platform using a non-horizontally oriented nanotube element

Four terminal non-volatile transistor device

Non-volatile RAM cell and array using nanotube switch position for information state

Nanotube-on-gate FET structures and applications

Devices having horizontally-disposed nanofabric articles and methods of making the same

Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Sensor platform using a non-horizontally oriented nanotube element

Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Method of making sensor platform using a non-horizontally oriented nanotube element

Devices having vertically-disposed nanofabric articles and methods of making the same

INFINEON TECHNOLOGIES AG

DRAM with vertical transistor and trench capacitor memory cells and method of fabrication

Method of manufacturing circuit with buried strap including a liner

Self-aligned collar and strap formation for semiconductor devices

Vertical 8F2 cell dram with active area self-aligned to bit line

DRAM with vertical transistor and trench capacitor memory cells and methods of fabrication

In-situ method for measuring the endpoint of a resist recess etch process

DRAM with very shallow trench isolation

Circuit with buried strap including liner

SIEMENS AG

Recessed shallow trench isolation structure nitride liner and method for making same

Overlay measurement technique using moire patterns

Recessed shallow trench isolation structure nitride liner and method for making same

IBM

TTO nitride liner for improved collar protection and TTO reliability

Process for protecting array top oxide

Non-destructive method and device for measuring the depth of a buried interface

INFINEON TECHNOLOGIES CORP

Methods for forming vertical gate transistors providing improved isolation and alignment of vertical gate contacts

BERTIN CLAUDE L

One-time programmable, non-volatile field effect devices and methods of making same

SEGAL BRENT M

Sensor platform using a horizontally oriented nanotube element