Inventor
CHO HAG-JU
KR25 patents
⚠️ This page may combine multiple inventors who share the name “CHO HAG-JU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS6509601B1Jan 21, 2003
Semiconductor memory device having capacitor protection layer and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD231 citations98
US6821862B2Nov 23, 2004
Methods of manufacturing integrated circuit devices that include a metal oxide layer disposed on another layer to protect the other layer from diffusion of impurities and integrated circuit devices manufactured using same
SAMSUNG ELECTRONICS CO LTD80 citations97
US6740531B2May 25, 2004
Method of fabricating integrated circuit devices having dielectric regions protected with multi-layer insulation structures
SAMSUNG ELECTRONICS CO LTD19 citations92
US6096592AAug 1, 2000
Methods of forming integrated circuit capacitors having plasma treated regions therein
SAMSUNG ELECTRONICS CO LTD34 citations92
US6001660ADec 14, 1999
Methods of forming integrated circuit capacitors using metal reflow techniques
SAMSUNG ELECTRONICS CO LTD48 citations90
US7972950B2Jul 5, 2011
Method of fabricating semiconductor device having dual gate
SAMSUNG ELECTRONICS CO LTD8 citations84
US7507652B2Mar 24, 2009
Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure
SAMSUNG ELECTRONICS CO LTD10 citations84
US7390719B2Jun 24, 2008
Method of manufacturing a semiconductor device having a dual gate structure
SAMSUNG ELECTRONICS CO LTD10 citations84
US11024631B2Jun 1, 2021
Integrated circuit device including field isolation layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US7023037B2Apr 4, 2006
Integrated circuit devices having dielectric regions protected with multi-layer insulation structures
SAMSUNG ELECTRONICS CO LTD8 citations73
US8748239B2Jun 10, 2014
Method of fabricating a gate
SAMSUNG ELECTRONICS CO LTD4 citations72
US9236313B2Jan 12, 2016
Method of fabricating semiconductor device having dual gate
SAMSUNG ELECTRONICS CO LTD1 citations63
US7531881B2May 12, 2009
Semiconductor devices having transistors with different gate structures and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7494859B2Feb 24, 2009
Semiconductor device having metal gate patterns and related method of manufacture
SAMSUNG ELECTRONICS CO LTD4 citations62
US7892958B2Feb 22, 2011
Methods of fabricating semiconductor devices having transistors with different gate structures
SAMSUNG ELECTRONICS CO LTD0 citations52
US7399670B2Jul 15, 2008
Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed
SAMSUNG ELECTRONICS CO LTD0 citations52
US8367502B2Feb 5, 2013
Method of manufacturing dual gate semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations49
US7727841B2Jun 1, 2010
Method of manufacturing semiconductor device with dual gates
SAMSUNG ELECTRONICS CO LTD0 citations41