P

Inventor

CHO HAG-JU

KR25 patents
⚠️ This page may combine multiple inventors who share the name “CHO HAG-JU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

18 patents
US6509601B1Jan 21, 2003

Semiconductor memory device having capacitor protection layer and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD231 citations98
US6821862B2Nov 23, 2004

Methods of manufacturing integrated circuit devices that include a metal oxide layer disposed on another layer to protect the other layer from diffusion of impurities and integrated circuit devices manufactured using same

SAMSUNG ELECTRONICS CO LTD80 citations97
US6740531B2May 25, 2004

Method of fabricating integrated circuit devices having dielectric regions protected with multi-layer insulation structures

SAMSUNG ELECTRONICS CO LTD19 citations92
US6096592AAug 1, 2000

Methods of forming integrated circuit capacitors having plasma treated regions therein

SAMSUNG ELECTRONICS CO LTD34 citations92
US6001660ADec 14, 1999

Methods of forming integrated circuit capacitors using metal reflow techniques

SAMSUNG ELECTRONICS CO LTD48 citations90
US7972950B2Jul 5, 2011

Method of fabricating semiconductor device having dual gate

SAMSUNG ELECTRONICS CO LTD8 citations84
US7507652B2Mar 24, 2009

Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure

SAMSUNG ELECTRONICS CO LTD10 citations84
US7390719B2Jun 24, 2008

Method of manufacturing a semiconductor device having a dual gate structure

SAMSUNG ELECTRONICS CO LTD10 citations84
US11024631B2Jun 1, 2021

Integrated circuit device including field isolation layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US7023037B2Apr 4, 2006

Integrated circuit devices having dielectric regions protected with multi-layer insulation structures

SAMSUNG ELECTRONICS CO LTD8 citations73
US8748239B2Jun 10, 2014

Method of fabricating a gate

SAMSUNG ELECTRONICS CO LTD4 citations72
US9236313B2Jan 12, 2016

Method of fabricating semiconductor device having dual gate

SAMSUNG ELECTRONICS CO LTD1 citations63
US7531881B2May 12, 2009

Semiconductor devices having transistors with different gate structures and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7494859B2Feb 24, 2009

Semiconductor device having metal gate patterns and related method of manufacture

SAMSUNG ELECTRONICS CO LTD4 citations62
US7892958B2Feb 22, 2011

Methods of fabricating semiconductor devices having transistors with different gate structures

SAMSUNG ELECTRONICS CO LTD0 citations52
US7399670B2Jul 15, 2008

Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed

SAMSUNG ELECTRONICS CO LTD0 citations52
US8367502B2Feb 5, 2013

Method of manufacturing dual gate semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations49
US7727841B2Jun 1, 2010

Method of manufacturing semiconductor device with dual gates

SAMSUNG ELECTRONICS CO LTD0 citations41

NA HOON-JOO

2 patents

LEE HYO-SAN

1 patent

IMEC

1 patent

CHO HAG-JU

1 patent

KIM JONG-PIL

1 patent

GOVOREANU BOGDAN

1 patent