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Inventor
COTTON RANDY W
US
2 patents
Patents
2 patents
US7544575B2
Jun 9, 2009
Dual metal silicide scheme using a dual spacer process
FREESCALE SEMICONDUCTOR INC
12 citations
81
US7071038B2
Jul 4, 2006
Method of forming a semiconductor device having a dielectric layer with high dielectric constant
FREESCALE SEMICONDUCTOR INC
10 citations
71