P

Inventor

JANG YOUNG-CHUL

KR17 patents
⚠️ This page may combine multiple inventors who share the name “JANG YOUNG-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

15 patents
US6211094B1Apr 3, 2001

Thickness control method in fabrication of thin-film layers in semiconductor devices

SAMSUNG ELECTRONICS CO LTD101 citations94
US7683404B2Mar 23, 2010

Stacked memory and method for forming the same

SAMSUNG ELECTRONICS CO LTD32 citations92
US7602028B2Oct 13, 2009

NAND flash memory devices having 3-dimensionally arranged memory cells and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD23 citations92
US5863807AJan 26, 1999

Manufacturing method of a semiconductor integrated circuit

SAMSUNG ELECTRONICS CO LTD75 citations91
US5740065AApr 14, 1998

Method for manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD36 citations91
US7538386B2May 26, 2009

MOS transistor having protruded-shape channel and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US7960844B2Jun 14, 2011

3-dimensional flash memory device, method of fabrication and method of operation

SAMSUNG ELECTRONICS CO LTD6 citations63
US7910433B2Mar 22, 2011

Methods of fabricating multi-layer nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD2 citations63
US7170133B2Jan 30, 2007

Transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7141851B2Nov 28, 2006

Transistors having a recessed channel region

SAMSUNG ELECTRONICS CO LTD3 citations63
US8343812B2Jan 1, 2013

Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations62
US8034668B2Oct 11, 2011

Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines

SAMSUNG ELECTRONICS CO LTD3 citations62
US7759203B2Jul 20, 2010

MOS transistor having protruded-shape channel and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations62
US7601998B2Oct 13, 2009

Semiconductor memory device having metallization comprising select lines, bit lines and word lines

SAMSUNG ELECTRONICS CO LTD1 citations62
US7563683B2Jul 21, 2009

Transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52

JANG YOUNG-CHUL

2 patents