Inventor

JUNG SOON-MOON

KR66 patents

⚠️ This page may combine multiple inventors who share the name “JUNG SOON-MOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JUNG SOON-MOON

SAMSUNG ELECTRONICS CO LTD

Non-volatile memory devices including etching protection layers and methods of forming the same

Unitary interconnection structures integral with a dielectric layer

Method of forming contact structure in a semiconductor device

Method of forming contact holes of semiconductor device

Small-sized static random access memory cell

Semiconductor devices having thin film transistors and methods of fabricating the same

Memory device including 3-dimensionally arranged memory cell transistors and methods of operating the same

Stacked memory and method for forming the same

Semiconductor device with three-dimensional array structure

NAND flash memory devices having 3-dimensionally arranged memory cells and methods of fabricating the same

Semiconductor integrated circuits with stacked node contact structures

Unitary interconnection structures integral with a dielectric layer and fabrication methods thereof

Semiconductor memory device having three dimensional structure

Semiconductor device having a plurality of stacked transistors and method of fabricating the same

Semiconductor memory device and method for arranging and manufacturing the same

Non-volatile memory device and method of operating the same

Semiconductor device and method of forming the same

NAND-type non-volatile memory devices having a stacked structure

Node contact structures in semiconductor devices

Phase change memory device and method of fabricating the same

Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the same

Methods of fabricating a semiconductor device having a node contact structure of a CMOS inverter

Three-dimensional memory device and driving method thereof

One transistor DRAM device and method of forming the same

Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the same

Method of forming single crystal semiconductor thin film on insulator and semiconductor device fabricated thereby

Multilevel integrated circuit devices and methods of forming the same

Methods of fabricating semiconductor devices having gate insulating layers with differing thicknesses

Layouts for CMOS SRAM cells and devices

Semiconductor device having three dimensional structure

3-dimensional flash memory device, method of fabrication and method of operation

Methods of fabricating multi-layer nonvolatile memory devices

Nand-type non-volatile memory device

Methods of forming SRAM cells having landing pad in contact with upper and lower cell gate patterns

Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques

Semiconductor devices with a source/drain regions formed on a recessed portion of an isolation layer

Transistor and method of fabricating the same

Transistors having a recessed channel region

SRAM cells having landing pad in contact with upper and lower cell gate patterns and methods of forming the same

Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the same

Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines

Semiconductor memory devices having vertically-stacked transistors therein

Semiconductor memory device having metallization comprising select lines, bit lines and word lines

Semiconductor transistor with multi-level transistor structure and method of fabricating the same

Methods of fabricating semiconductor devices having thin film transistors

Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon

LEE JAE DUK

Methods of programming non-volatile flash memory devices by applying a higher voltage level to a selected word line than to a word line neighboring the selected word line

UNIV FLORIDA

Method of fabricating a crystalline thin film on an amorphous substrate

JEONG JAE-HUN

Methods of forming one transistor DRAM devices

PARK JUN-BEOM

Method of forming semiconductor device having common node that contacts plural stacked active elements and that has resistive memory elements corresponding to the active elements