Inventor
OH JAE-HEE
KR33 patents
⚠️ This page may combine multiple inventors who share the name “OH JAE-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
22 patentsUS8030129B2Oct 4, 2011
Method of fabricating nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD516 citations99
US7541252B2Jun 2, 2009
Methods of fabricating a semiconductor device including a self-aligned cell diode
SAMSUNG ELECTRONICS CO LTD101 citations96
US7651906B2Jan 26, 2010
Integrated circuit devices having a stress buffer spacer and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD27 citations93
US7598112B2Oct 6, 2009
Phase change memory devices and their methods of fabrication
SAMSUNG ELECTRONICS CO LTD24 citations93
US7442602B2Oct 28, 2008
Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other
SAMSUNG ELECTRONICS CO LTD39 citations93
US7375389B2May 20, 2008
Semiconductor device having a capacitor-under-bitline structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US8384060B2Feb 26, 2013
Resistive memory device
SAMSUNG ELECTRONICS CO LTD7 citations84
US8021966B2Sep 20, 2011
Method fabricating nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD11 citations84
US7906773B2Mar 15, 2011
Phase change memory device
SAMSUNG ELECTRONICS CO LTD13 citations84
US7671395B2Mar 2, 2010
Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other
SAMSUNG ELECTRONICS CO LTD14 citations84
US7612360B2Nov 3, 2009
Non-volatile memory devices having cell diodes
SAMSUNG ELECTRONICS CO LTD16 citations84
US7534723B2May 19, 2009
Methods of forming fine patterns, and methods of forming trench isolation layers using the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US8039828B2Oct 18, 2011
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations74
US6777735B2Aug 17, 2004
Semiconductor memory device having a metal plug or a landing pad
SAMSUNG ELECTRONICS CO LTD6 citations74
US6620685B2Sep 16, 2003
Method for fabricating of semiconductor memory device having a metal plug or a landing pad
SAMSUNG ELECTRONICS CO LTD7 citations74
US6486531B2Nov 26, 2002
Contact structure with a lower interconnection having t-shaped portion in cross section and method for forming the same
SAMSUNG ELECTRONICS CO LTD11 citations74
US7625777B2Dec 1, 2009
Memory device having highly integrated cell structure and method of its fabrication
SAMSUNG ELECTRONICS CO LTD4 citations63
US7622307B2Nov 24, 2009
Semiconductor devices having a planarized insulating layer and methods of forming the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7163859B2Jan 16, 2007
Method of manufacturing capacitors for semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations63
US7910912B2Mar 22, 2011
Semiconductor devices having a planarized insulating layer
SAMSUNG ELECTRONICS CO LTD1 citations52
US7018903B2Mar 28, 2006
Method of forming semiconductor device with capacitor
SAMSUNG ELECTRONICS CO LTD0 citations48
US12598978B2Apr 7, 2026
Semiconductor device having a source/drain contact connected to a back-side power rail by a landing pad and a through electrode
SAMSUNG ELECTRONICS CO LTD0 citations47
PARK JAE-HYUN
4 patentsUS8143610B2Mar 27, 2012
Semiconductor phase-change memory device
PARK JAE-HYUN25 citations92
US8148193B2Apr 3, 2012
Semiconductor device and method of fabricating the same
PARK JAE-HYUN4 citations63
US8120005B2Feb 21, 2012
Phase change memory devices and their methods of fabrication
PARK JAE-HYUN3 citations63
US8958229B2Feb 17, 2015
Nonvolatile memory device and method of fabricating same
PARK JAE-HYUN0 citations42