P

Inventor

OH JAE-HEE

KR33 patents
⚠️ This page may combine multiple inventors who share the name “OH JAE-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

22 patents
US8030129B2Oct 4, 2011

Method of fabricating nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD516 citations99
US7541252B2Jun 2, 2009

Methods of fabricating a semiconductor device including a self-aligned cell diode

SAMSUNG ELECTRONICS CO LTD101 citations96
US7651906B2Jan 26, 2010

Integrated circuit devices having a stress buffer spacer and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD27 citations93
US7598112B2Oct 6, 2009

Phase change memory devices and their methods of fabrication

SAMSUNG ELECTRONICS CO LTD24 citations93
US7442602B2Oct 28, 2008

Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other

SAMSUNG ELECTRONICS CO LTD39 citations93
US7375389B2May 20, 2008

Semiconductor device having a capacitor-under-bitline structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD20 citations92
US8384060B2Feb 26, 2013

Resistive memory device

SAMSUNG ELECTRONICS CO LTD7 citations84
US8021966B2Sep 20, 2011

Method fabricating nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD11 citations84
US7906773B2Mar 15, 2011

Phase change memory device

SAMSUNG ELECTRONICS CO LTD13 citations84
US7671395B2Mar 2, 2010

Phase change memory cells having a cell diode and a bottom electrode self-aligned with each other

SAMSUNG ELECTRONICS CO LTD14 citations84
US7612360B2Nov 3, 2009

Non-volatile memory devices having cell diodes

SAMSUNG ELECTRONICS CO LTD16 citations84
US7534723B2May 19, 2009

Methods of forming fine patterns, and methods of forming trench isolation layers using the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US8039828B2Oct 18, 2011

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations74
US6777735B2Aug 17, 2004

Semiconductor memory device having a metal plug or a landing pad

SAMSUNG ELECTRONICS CO LTD6 citations74
US6620685B2Sep 16, 2003

Method for fabricating of semiconductor memory device having a metal plug or a landing pad

SAMSUNG ELECTRONICS CO LTD7 citations74
US6486531B2Nov 26, 2002

Contact structure with a lower interconnection having t-shaped portion in cross section and method for forming the same

SAMSUNG ELECTRONICS CO LTD11 citations74
US7625777B2Dec 1, 2009

Memory device having highly integrated cell structure and method of its fabrication

SAMSUNG ELECTRONICS CO LTD4 citations63
US7622307B2Nov 24, 2009

Semiconductor devices having a planarized insulating layer and methods of forming the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7163859B2Jan 16, 2007

Method of manufacturing capacitors for semiconductor devices

SAMSUNG ELECTRONICS CO LTD6 citations63
US7910912B2Mar 22, 2011

Semiconductor devices having a planarized insulating layer

SAMSUNG ELECTRONICS CO LTD1 citations52
US7018903B2Mar 28, 2006

Method of forming semiconductor device with capacitor

SAMSUNG ELECTRONICS CO LTD0 citations48
US12598978B2Apr 7, 2026

Semiconductor device having a source/drain contact connected to a back-side power rail by a landing pad and a through electrode

SAMSUNG ELECTRONICS CO LTD0 citations47

PARK JAE-HYUN

4 patents

KIM JUNG-IN

3 patents

TAIYO YUDEN KK

1 patent

LEE KONG-SOO

1 patent

KIM JIN-YOUNG

1 patent

EUN SUNG-HO

1 patent