P

Inventor

OSADA MAI

JP35 patents
⚠️ This page may combine multiple inventors who share the name “OSADA MAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SEMICONDUCTOR ENERGY LAB

29 patents
US7221338B2May 22, 2007

Display device

SEMICONDUCTOR ENERGY LAB82 citations99
US7129917B2Oct 31, 2006

Light-emitting device

SEMICONDUCTOR ENERGY LAB142 citations99
US6933533B2Aug 23, 2005

Light emitting device and method of manufacturing the same

SEMICONDUCTOR ENERGY LAB99 citations99
US6872973B1Mar 29, 2005

Electro-optical device

SEMICONDUCTOR ENERGY LAB108 citations99
US6583776B2Jun 24, 2003

Light-emitting device

SEMICONDUCTOR ENERGY LAB149 citations99
US7995010B2Aug 9, 2011

Light-emitting device

SEMICONDUCTOR ENERGY LAB61 citations98
US7623098B2Nov 24, 2009

Display device

SEMICONDUCTOR ENERGY LAB55 citations98
US6906344B2Jun 14, 2005

Thin film transistor with plural channels and corresponding plural overlapping electrodes

SEMICONDUCTOR ENERGY LAB70 citations98
US6740938B2May 25, 2004

Transistor provided with first and second gate electrodes with channel region therebetween

SEMICONDUCTOR ENERGY LAB114 citations98
US7990348B2Aug 2, 2011

Display device

SEMICONDUCTOR ENERGY LAB35 citations96
US7623100B2Nov 24, 2009

Display device

SEMICONDUCTOR ENERGY LAB26 citations96
US7623099B2Nov 24, 2009

Display device

SEMICONDUCTOR ENERGY LAB28 citations96
US7154119B2Dec 26, 2006

Thin film transistor with plural channels and corresponding plural overlapping electrodes

SEMICONDUCTOR ENERGY LAB43 citations96
US7629618B2Dec 8, 2009

Light emitting device and method of manufacturing the same

SEMICONDUCTOR ENERGY LAB12 citations93
US7535022B2May 19, 2009

Thin film transistor with plural channels and corresponding overlapping electrode

SEMICONDUCTOR ENERGY LAB32 citations93
US7403179B2Jul 22, 2008

Electro-optical device

SEMICONDUCTOR ENERGY LAB29 citations93
US7045369B2May 16, 2006

Method of fabricating and/or repairing a light emitting device

SEMICONDUCTOR ENERGY LAB21 citations93
US9793335B2Oct 17, 2017

Light emitting device and method of manufacturing the same

SEMICONDUCTOR ENERGY LAB6 citations84
US9231044B2Jan 5, 2016

Light emitting device and method of manufacturing the same

SEMICONDUCTOR ENERGY LAB5 citations84
US7727779B2Jun 1, 2010

Method of fabricating and/or repairing a light emitting device

SEMICONDUCTOR ENERGY LAB9 citations84
US8013346B2Sep 6, 2011

Light emitting device and method of manufacturing the same

SEMICONDUCTOR ENERGY LAB6 citations74
US9331130B2May 3, 2016

Light-emitting device

SEMICONDUCTOR ENERGY LAB1 citations63
US9196663B2Nov 24, 2015

Display device

SEMICONDUCTOR ENERGY LAB1 citations63
US9178004B2Nov 3, 2015

Light-emitting device

SEMICONDUCTOR ENERGY LAB2 citations63
US9035853B2May 19, 2015

Light-emitting device

SEMICONDUCTOR ENERGY LAB1 citations63
US8674909B2Mar 18, 2014

Light-emitting device

SEMICONDUCTOR ENERGY LAB1 citations63
US10032840B2Jul 24, 2018

Light-emitting device

SEMICONDUCTOR ENERGY LAB0 citations52
US9502483B2Nov 22, 2016

Light-emitting device

SEMICONDUCTOR ENERGY LAB0 citations52
US8638278B2Jan 28, 2014

Display device

SEMICONDUCTOR ENERGY LAB0 citations52

YAMAZAKI SHUNPEI

5 patents

KOYAMA JUN

1 patent