Inventor
LIM KHEE YONG
SG36 patents
⚠️ This page may combine multiple inventors who share the name “LIM KHEE YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES SG PTE LTD
27 patentsUS10424568B1Sep 24, 2019
Image sensor with stacked SPAD and method for producing the same
GLOBALFOUNDRIES SG PTE LTD10 citations83
US9343466B1May 17, 2016
Methods for fabricating flash memory cells and integrated circuits having flash memory cells embedded with logic
GLOBALFOUNDRIES SG PTE LTD14 citations82
US10103156B2Oct 16, 2018
Strap layout for non-volatile memory device
GLOBALFOUNDRIES SG PTE LTD5 citations73
US10724983B2Jul 28, 2020
Sensor device and a method for forming the sensor device
GLOBALFOUNDRIES SG PTE LTD2 citations72
US10020372B1Jul 10, 2018
Method to form thicker erase gate poly superflash NVM
GLOBALFOUNDRIES SG PTE LTD5 citations71
US9653365B1May 16, 2017
Methods for fabricating integrated circuits with low, medium, and/or high voltage transistors on an extremely thin silicon-on-insulator substrate
GLOBALFOUNDRIES SG PTE LTD2 citations71
US11522097B2Dec 6, 2022
Diode devices and methods of forming diode devices
GLOBALFOUNDRIES SG PTE LTD2 citations69
US11316063B2Apr 26, 2022
Diode devices and methods of forming a diode device
GLOBALFOUNDRIES SG PTE LTD2 citations68
US7999325B2Aug 16, 2011
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
GLOBALFOUNDRIES SG PTE LTD3 citations62
US12464833B2Nov 4, 2025
Avalanche photodetectors with a combined lateral and vertical arrangement
GLOBALFOUNDRIES SG PTE LTD0 citations61
US11462622B1Oct 4, 2022
Memory cells and methods of forming a memory cell
GLOBALFOUNDRIES SG PTE LTD1 citations61
US8945997B2Feb 3, 2015
Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same
GLOBALFOUNDRIES SG PTE LTD3 citations61
US11152410B2Oct 19, 2021
Image sensor with reduced capacitance transfer gate
GLOBALFOUNDRIES SG PTE LTD0 citations60
US8963116B2Feb 24, 2015
Wrap around phase change memory
GLOBALFOUNDRIES SG PTE LTD3 citations60
US12051761B2Jul 30, 2024
Multi-semiconductor layer photodetector and related method
GLOBALFOUNDRIES SG PTE LTD0 citations58
US10991704B2Apr 27, 2021
Memory device and a method for forming the memory device
GLOBALFOUNDRIES SG PTE LTD0 citations52
US9520506B2Dec 13, 2016
3D high voltage charge pump
GLOBALFOUNDRIES SG PTE LTD1 citations51
US9444041B2Sep 13, 2016
Back-gated non-volatile memory cell
GLOBALFOUNDRIES SG PTE LTD1 citations51
US10608108B2Mar 31, 2020
Extended drain MOSFETs (EDMOS)
GLOBALFOUNDRIES SG PTE LTD0 citations50
US9911867B2Mar 6, 2018
Fin-based nonvolatile memory structures, integrated circuits with such structures, and methods for fabricating same
GLOBALFOUNDRIES SG PTE LTD0 citations50
US9196830B2Nov 24, 2015
Wrap around phase change memory
GLOBALFOUNDRIES SG PTE LTD0 citations50
US11444168B2Sep 13, 2022
Transistor devices and methods of forming transistor devices
GLOBALFOUNDRIES SG PTE LTD0 citations47
US10522614B2Dec 31, 2019
Method to fabricate capacitance-matching FET and related device
GLOBALFOUNDRIES SG PTE LTD0 citations45
US12176405B1Dec 24, 2024
Field-effect transistors with airgap spacers
GLOBALFOUNDRIES SG PTE LTD0 citations44
US9362297B2Jun 7, 2016
Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same
GLOBALFOUNDRIES SG PTE LTD0 citations43
US10707358B2Jul 7, 2020
Selective shielding of ambient light at chip level
GLOBALFOUNDRIES SG PTE LTD0 citations42
US10395987B2Aug 27, 2019
Transistor with source-drain silicide pullback
GLOBALFOUNDRIES SG PTE LTD0 citations40
CHARTERED SEMICONDUCTOR MFG
4 patentsUS7445978B2Nov 4, 2008
Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
CHARTERED SEMICONDUCTOR MFG22 citations92
US7256084B2Aug 14, 2007
Composite stress spacer
CHARTERED SEMICONDUCTOR MFG12 citations83
US7615427B2Nov 10, 2009
Spacer-less low-k dielectric processes
CHARTERED SEMICONDUCTOR MFG3 citations62
US7615433B2Nov 10, 2009
Double anneal with improved reliability for dual contact etch stop liner scheme
CHARTERED SEMICONDUCTOR MFG1 citations50