P

Inventor

LIM KHEE YONG

SG36 patents
⚠️ This page may combine multiple inventors who share the name “LIM KHEE YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES SG PTE LTD

27 patents
US10424568B1Sep 24, 2019

Image sensor with stacked SPAD and method for producing the same

GLOBALFOUNDRIES SG PTE LTD10 citations83
US9343466B1May 17, 2016

Methods for fabricating flash memory cells and integrated circuits having flash memory cells embedded with logic

GLOBALFOUNDRIES SG PTE LTD14 citations82
US10103156B2Oct 16, 2018

Strap layout for non-volatile memory device

GLOBALFOUNDRIES SG PTE LTD5 citations73
US10724983B2Jul 28, 2020

Sensor device and a method for forming the sensor device

GLOBALFOUNDRIES SG PTE LTD2 citations72
US10020372B1Jul 10, 2018

Method to form thicker erase gate poly superflash NVM

GLOBALFOUNDRIES SG PTE LTD5 citations71
US9653365B1May 16, 2017

Methods for fabricating integrated circuits with low, medium, and/or high voltage transistors on an extremely thin silicon-on-insulator substrate

GLOBALFOUNDRIES SG PTE LTD2 citations71
US11522097B2Dec 6, 2022

Diode devices and methods of forming diode devices

GLOBALFOUNDRIES SG PTE LTD2 citations69
US11316063B2Apr 26, 2022

Diode devices and methods of forming a diode device

GLOBALFOUNDRIES SG PTE LTD2 citations68
US7999325B2Aug 16, 2011

Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS

GLOBALFOUNDRIES SG PTE LTD3 citations62
US12464833B2Nov 4, 2025

Avalanche photodetectors with a combined lateral and vertical arrangement

GLOBALFOUNDRIES SG PTE LTD0 citations61
US11462622B1Oct 4, 2022

Memory cells and methods of forming a memory cell

GLOBALFOUNDRIES SG PTE LTD1 citations61
US8945997B2Feb 3, 2015

Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same

GLOBALFOUNDRIES SG PTE LTD3 citations61
US11152410B2Oct 19, 2021

Image sensor with reduced capacitance transfer gate

GLOBALFOUNDRIES SG PTE LTD0 citations60
US8963116B2Feb 24, 2015

Wrap around phase change memory

GLOBALFOUNDRIES SG PTE LTD3 citations60
US12051761B2Jul 30, 2024

Multi-semiconductor layer photodetector and related method

GLOBALFOUNDRIES SG PTE LTD0 citations58
US10991704B2Apr 27, 2021

Memory device and a method for forming the memory device

GLOBALFOUNDRIES SG PTE LTD0 citations52
US9520506B2Dec 13, 2016

3D high voltage charge pump

GLOBALFOUNDRIES SG PTE LTD1 citations51
US9444041B2Sep 13, 2016

Back-gated non-volatile memory cell

GLOBALFOUNDRIES SG PTE LTD1 citations51
US10608108B2Mar 31, 2020

Extended drain MOSFETs (EDMOS)

GLOBALFOUNDRIES SG PTE LTD0 citations50
US9911867B2Mar 6, 2018

Fin-based nonvolatile memory structures, integrated circuits with such structures, and methods for fabricating same

GLOBALFOUNDRIES SG PTE LTD0 citations50
US9196830B2Nov 24, 2015

Wrap around phase change memory

GLOBALFOUNDRIES SG PTE LTD0 citations50
US11444168B2Sep 13, 2022

Transistor devices and methods of forming transistor devices

GLOBALFOUNDRIES SG PTE LTD0 citations47
US10522614B2Dec 31, 2019

Method to fabricate capacitance-matching FET and related device

GLOBALFOUNDRIES SG PTE LTD0 citations45
US12176405B1Dec 24, 2024

Field-effect transistors with airgap spacers

GLOBALFOUNDRIES SG PTE LTD0 citations44
US9362297B2Jun 7, 2016

Integrated circuits having improved split-gate nonvolatile memory devices and methods for fabrication of same

GLOBALFOUNDRIES SG PTE LTD0 citations43
US10707358B2Jul 7, 2020

Selective shielding of ambient light at chip level

GLOBALFOUNDRIES SG PTE LTD0 citations42
US10395987B2Aug 27, 2019

Transistor with source-drain silicide pullback

GLOBALFOUNDRIES SG PTE LTD0 citations40

CHARTERED SEMICONDUCTOR MFG

4 patents

IBM

2 patents

LEE YONG MENG

1 patent

LIM KHEE YONG

1 patent

TOH ENG HUAT

1 patent