Inventor

ILLGEN RALF

DE24 patents

⚠️ This page may combine multiple inventors who share the name “ILLGEN RALF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ILLGEN RALF

GLOBALFOUNDRIES INC

Ferroelectric FinFET

Source and drain doping using doped raised source and drain regions

Semiconductor structure including a first transistor and a second transistor

Temperature independent resistor

Method of forming a semiconductor structure including a vertical nanowire

Non-volatile transistor element including a buried ferroelectric material based storage mechanism

Ferroelectric FinFET

Semiconductor-on-insulator wafer, semiconductor structure including a transistor, and methods for the formation and operation thereof

Method including a formation of a transistor and semiconductor structure including a first transistor and a second transistor

Threshold voltage adjustment in a fin transistor by corner implantation

Device including a transistor having a stressed channel region and method for the formation thereof

FLACHOWSKY STEFAN

Replacement gate FinFET structures with high mobility channel

In situ doping and diffusionless annealing of embedded stressor regions in PMOS and NMOS devices

Methods of forming stressed silicon-carbon areas in an NMOS transistor

Methods for fabricating MOS devices with stress memorization

Implantation of hydrogen to improve gate insulation layer-substrate interface

Methods of forming a semiconductor device with recessed source/design regions, and a semiconductor device comprising same

BALDAUF TIM

Integrated circuits having protruding source and drain regions and methods for forming integrated circuits

Threshold voltage adjustment in a Fin transistor by corner implantation

Strain engineering in three-dimensional transistors based on strained isolation material

HOENTSCHEL JAN

Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes

Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes

ILLGEN RALF

Ultrathin body fully depleted silicon-on-insulator integrated circuits and methods for fabricating same

Methods of forming a PMOS device with in situ doped epitaxial source/drain regions