P

Inventor

FU JIANMING

US98 patents
⚠️ This page may combine multiple inventors who share the name “FU JIANMING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

49 patents
US6784096B2Aug 31, 2004

Methods and apparatus for forming barrier layers in high aspect ratio vias

APPLIED MATERIALS INC137 citations99
US6451177B1Sep 17, 2002

Vault shaped target and magnetron operable in two sputtering modes

APPLIED MATERIALS INC103 citations99
US6444104B2Sep 3, 2002

Sputtering target having an annular vault

APPLIED MATERIALS INC85 citations99
US6436251B2Aug 20, 2002

Vault-shaped target and magnetron having both distributed and localized magnets

APPLIED MATERIALS INC89 citations99
US6413382B1Jul 2, 2002

Pulsed sputtering with a small rotating magnetron

APPLIED MATERIALS INC171 citations99
US6306265B1Oct 23, 2001

High-density plasma for ionized metal deposition capable of exciting a plasma wave

APPLIED MATERIALS INC138 citations99
US6251242B1Jun 26, 2001

Magnetron and target producing an extended plasma region in a sputter reactor

APPLIED MATERIALS INC287 citations99
US5897752AApr 27, 1999

Wafer bias ring in a sustained self-sputtering reactor

APPLIED MATERIALS INC186 citations99
US6692617B1Feb 17, 2004

Sustained self-sputtering reactor having an increased density plasma

APPLIED MATERIALS INC79 citations98
US6398929B1Jun 4, 2002

Plasma reactor and shields generating self-ionized plasma for sputtering

APPLIED MATERIALS INC128 citations98
US6358376B1Mar 19, 2002

Biased shield in a magnetron sputter reactor

APPLIED MATERIALS INC81 citations98
US6277249B1Aug 21, 2001

Integrated process for copper via filling using a magnetron and target producing highly energetic ions

APPLIED MATERIALS INC273 citations98
US6274008B1Aug 14, 2001

Integrated process for copper via filling

APPLIED MATERIALS INC231 citations98
US6183614B1Feb 6, 2001

Rotating sputter magnetron assembly

APPLIED MATERIALS INC142 citations98
US6582569B1Jun 24, 2003

Process for sputtering copper in a self ionized plasma

APPLIED MATERIALS INC75 citations97
US6413383B1Jul 2, 2002

Method for igniting a plasma in a sputter reactor

APPLIED MATERIALS INC92 citations97
US6221221B1Apr 24, 2001

Apparatus for providing RF return current path control in a semiconductor wafer processing system

APPLIED MATERIALS INC154 citations97
US5985759ANov 16, 1999

Oxygen enhancement of ion metal plasma (IMP) sputter deposited barrier layers

APPLIED MATERIALS INC120 citations97
US7504006B2Mar 17, 2009

Self-ionized and capacitively-coupled plasma for sputtering and resputtering

APPLIED MATERIALS INC49 citations96
US7253109B2Aug 7, 2007

Method of depositing a tantalum nitride/tantalum diffusion barrier layer system

APPLIED MATERIALS INC44 citations96
US6991709B2Jan 31, 2006

Multi-step magnetron sputtering process

APPLIED MATERIALS INC46 citations96
US6974771B2Dec 13, 2005

Methods and apparatus for forming barrier layers in high aspect ratio vias

APPLIED MATERIALS INC46 citations96
US6911124B2Jun 28, 2005

Method of depositing a TaN seed layer

APPLIED MATERIALS INC52 citations96
US6787006B2Sep 7, 2004

Operating a magnetron sputter reactor in two modes

APPLIED MATERIALS INC53 citations96
US6743340B2Jun 1, 2004

Sputtering of aligned magnetic materials and magnetic dipole ring used therefor

APPLIED MATERIALS INC58 citations96
US6730196B2May 4, 2004

Auxiliary electromagnets in a magnetron sputter reactor

APPLIED MATERIALS INC56 citations96
US6627050B2Sep 30, 2003

Method and apparatus for depositing a tantalum-containing layer on a substrate

APPLIED MATERIALS INC67 citations96
US6485618B2Nov 26, 2002

Integrated copper fill process

APPLIED MATERIALS INC47 citations96
US6406599B1Jun 18, 2002

Magnetron with a rotating center magnet for a vault shaped sputtering target

APPLIED MATERIALS INC45 citations96
US6271592B1Aug 7, 2001

Sputter deposited barrier layers

APPLIED MATERIALS INC104 citations96
US6238528B1May 29, 2001

Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source

APPLIED MATERIALS INC55 citations96
US6059945AMay 9, 2000

Sputter target for eliminating redeposition on the target sidewall

APPLIED MATERIALS INC57 citations96
US5841624ANov 24, 1998

Cover layer for a substrate support chuck and method of fabricating same

APPLIED MATERIALS INC60 citations96
US5736021AApr 7, 1998

Electrically floating shield in a plasma reactor

APPLIED MATERIALS INC91 citations96
US6893541B2May 17, 2005

Multi-step process for depositing copper seed layer in a via

APPLIED MATERIALS INC51 citations95
US6228236B1May 8, 2001

Sputter magnetron having two rotation diameters

APPLIED MATERIALS INC113 citations95
US6790323B2Sep 14, 2004

Self ionized sputtering using a high density plasma source

APPLIED MATERIALS INC22 citations93
US6709553B2Mar 23, 2004

Multiple-step sputter deposition

APPLIED MATERIALS INC24 citations93
US6579421B1Jun 17, 2003

Transverse magnetic field for ionized sputter deposition

APPLIED MATERIALS INC43 citations93
US6497802B2Dec 24, 2002

Self ionized plasma sputtering

APPLIED MATERIALS INC21 citations93
US6485617B2Nov 26, 2002

Sputtering method utilizing an extended plasma region

APPLIED MATERIALS INC37 citations93
US6290825B1Sep 18, 2001

High-density plasma source for ionized metal deposition

APPLIED MATERIALS INC53 citations93
US6238803B1May 29, 2001

Titanium nitride barrier layers

APPLIED MATERIALS INC20 citations93
US6176981B1Jan 23, 2001

Wafer bias ring controlling the plasma potential in a sustained self-sputtering reactor

APPLIED MATERIALS INC21 citations93
US6042706AMar 28, 2000

Ionized PVD source to produce uniform low-particle deposition

APPLIED MATERIALS INC29 citations93
US5976334ANov 2, 1999

Reliable sustained self-sputtering

APPLIED MATERIALS INC42 citations93
US5895266AApr 20, 1999

Titanium nitride barrier layers

APPLIED MATERIALS INC23 citations93
US5876576AMar 2, 1999

Apparatus for sputtering magnetic target materials

APPLIED MATERIALS INC46 citations93
US5858184AJan 12, 1999

Process for forming improved titanium-containing barrier layers

APPLIED MATERIALS INC27 citations93

SILEVO INC

1 patent

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