Inventor
DING PEIJUN
US103 patents
⚠️ This page may combine multiple inventors who share the name “DING PEIJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
47 patentsUS6919275B2Jul 19, 2005
Method of preventing diffusion of copper through a tantalum-comprising barrier layer
APPLIED MATERIALS INC87 citations99
US6350353B2Feb 26, 2002
Alternate steps of IMP and sputtering process to improve sidewall coverage
APPLIED MATERIALS INC175 citations99
US6328871B1Dec 11, 2001
Barrier layer for electroplating processes
APPLIED MATERIALS INC161 citations99
US6066892AMay 23, 2000
Copper alloy seed layer for copper metallization in an integrated circuit
APPLIED MATERIALS INC185 citations99
US6037257AMar 14, 2000
Sputter deposition and annealing of copper alloy metallization
APPLIED MATERIALS INC117 citations99
US5879523AMar 9, 1999
Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
APPLIED MATERIALS INC160 citations99
US6692617B1Feb 17, 2004
Sustained self-sputtering reactor having an increased density plasma
APPLIED MATERIALS INC79 citations98
US6436267B1Aug 20, 2002
Method for achieving copper fill of high aspect ratio interconnect features
APPLIED MATERIALS INC105 citations98
US6398929B1Jun 4, 2002
Plasma reactor and shields generating self-ionized plasma for sputtering
APPLIED MATERIALS INC128 citations98
US6582569B1Jun 24, 2003
Process for sputtering copper in a self ionized plasma
APPLIED MATERIALS INC75 citations97
US6413383B1Jul 2, 2002
Method for igniting a plasma in a sputter reactor
APPLIED MATERIALS INC92 citations97
US7253109B2Aug 7, 2007
Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
APPLIED MATERIALS INC44 citations96
US7074714B2Jul 11, 2006
Method of depositing a metal seed layer on semiconductor substrates
APPLIED MATERIALS INC26 citations96
US6911124B2Jun 28, 2005
Method of depositing a TaN seed layer
APPLIED MATERIALS INC52 citations96
US6758947B2Jul 6, 2004
Damage-free sculptured coating deposition
APPLIED MATERIALS INC47 citations96
US6627050B2Sep 30, 2003
Method and apparatus for depositing a tantalum-containing layer on a substrate
APPLIED MATERIALS INC67 citations96
US6610184B2Aug 26, 2003
Magnet array in conjunction with rotating magnetron for plasma sputtering
APPLIED MATERIALS INC44 citations96
US6605197B1Aug 12, 2003
Method of sputtering copper to fill trenches and vias
APPLIED MATERIALS INC57 citations96
US6566259B1May 20, 2003
Integrated deposition process for copper metallization
APPLIED MATERIALS INC41 citations96
US6399479B1Jun 4, 2002
Processes to improve electroplating fill
APPLIED MATERIALS INC74 citations96
US6387805B2May 14, 2002
Copper alloy seed layer for copper metallization
APPLIED MATERIALS INC58 citations96
US6184137B1Feb 6, 2001
Structure and method for improving low temperature copper reflow in semiconductor features
APPLIED MATERIALS INC48 citations96
US6160315ADec 12, 2000
Copper alloy via structure
APPLIED MATERIALS INC73 citations96
US6139699AOct 31, 2000
Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
APPLIED MATERIALS INC72 citations96
US5911113AJun 8, 1999
Silicon-doped titanium wetting layer for aluminum plug
APPLIED MATERIALS INC65 citations96
US5736021AApr 7, 1998
Electrically floating shield in a plasma reactor
APPLIED MATERIALS INC91 citations96
US6893541B2May 17, 2005
Multi-step process for depositing copper seed layer in a via
APPLIED MATERIALS INC51 citations95
US6207558B1Mar 27, 2001
Barrier applications for aluminum planarization
APPLIED MATERIALS INC77 citations95
US6174811B1Jan 16, 2001
Integrated deposition process for copper metallization
APPLIED MATERIALS INC48 citations94
US7381639B2Jun 3, 2008
Method of depositing a metal seed layer on semiconductor substrates
APPLIED MATERIALS INC10 citations93
US6506287B1Jan 14, 2003
Overlap design of one-turn coil
APPLIED MATERIALS INC31 citations93
US6458255B2Oct 1, 2002
Ultra-low resistivity tantalum films and methods for their deposition
APPLIED MATERIALS INC32 citations93
US6235163B1May 22, 2001
Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance
APPLIED MATERIALS INC54 citations93
US7569125B2Aug 4, 2009
Shields usable with an inductively coupled plasma reactor
APPLIED MATERIALS INC16 citations92
US7294574B2Nov 13, 2007
Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement
APPLIED MATERIALS INC36 citations92
US7041201B2May 9, 2006
Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith
APPLIED MATERIALS INC31 citations92
US7014887B1Mar 21, 2006
Sequential sputter and reactive precleans of vias and contacts
APPLIED MATERIALS INC26 citations92
US6875321B2Apr 5, 2005
Auxiliary magnet array in conjunction with magnetron sputtering
APPLIED MATERIALS INC26 citations92
US6790776B2Sep 14, 2004
Barrier layer for electroplating processes
APPLIED MATERIALS INC34 citations92
US6488823B1Dec 3, 2002
Stress tunable tantalum and tantalum nitride films
APPLIED MATERIALS INC30 citations92
US6368880B2Apr 9, 2002
Barrier applications for aluminum planarization
APPLIED MATERIALS INC33 citations92
US6313033B1Nov 6, 2001
Ionized metal plasma Ta, TaNx, W, and WNx liners for gate electrode applications
APPLIED MATERIALS INC33 citations92
US6277198B1Aug 21, 2001
Use of tapered shadow clamp ring to provide improved physical vapor deposition system
APPLIED MATERIALS INC27 citations92
US6200433B1Mar 13, 2001
IMP technology with heavy gas sputtering
APPLIED MATERIALS INC45 citations92
US6193811B1Feb 27, 2001
Method for improved chamber bake-out and cool-down
APPLIED MATERIALS INC23 citations92
US6149776ANov 21, 2000
Copper sputtering target
APPLIED MATERIALS INC42 citations92
US6110821AAug 29, 2000
Method for forming titanium silicide in situ
APPLIED MATERIALS INC37 citations92
UNIV NEW YORK STATE RES FOUND
2 patentsCHIANG TONY
1 patentShowing the top 50 of 103 patents by PatentIndex Score.