Inventor
AGAM MOSHE
US22 patents
⚠️ This page may combine multiple inventors who share the name “AGAM MOSHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR COMPONENTS IND LLC
14 patentsUS10026728B1Jul 17, 2018
Semiconductor device having biasing structure for self-isolating buried layer and method therefor
SEMICONDUCTOR COMPONENTS IND LLC21 citations92
US10276556B2Apr 30, 2019
Semiconductor device having biasing structure for self-isolating buried layer and method therefor
SEMICONDUCTOR COMPONENTS IND LLC4 citations71
US10224323B2Mar 5, 2019
Isolation structure for semiconductor device having self-biasing buried layer and method therefor
SEMICONDUCTOR COMPONENTS IND LLC2 citations71
US10153213B2Dec 11, 2018
Process of forming an electronic device including a drift region, a sinker region and a resurf region
SEMICONDUCTOR COMPONENTS IND LLC3 citations68
US12125923B2Oct 22, 2024
High voltage diode on SOI substrate with trench-modified current path
SEMICONDUCTOR COMPONENTS IND LLC0 citations60
US10971632B2Apr 6, 2021
High voltage diode on SOI substrate with trench-modified current path
SEMICONDUCTOR COMPONENTS IND LLC0 citations60
US9478607B2Oct 25, 2016
Electronic device including an isolation structure
SEMICONDUCTOR COMPONENTS IND LLC2 citations59
US10896954B2Jan 19, 2021
Electronic device including a drift region
SEMICONDUCTOR COMPONENTS IND LLC0 citations57
US11251263B2Feb 15, 2022
Electronic device including a semiconductor body or an isolation structure within a trench
SEMICONDUCTOR COMPONENTS IND LLC0 citations55
US10490549B2Nov 26, 2019
Isolation structure for semiconductor device having self-biasing buried layer and method therefor
SEMICONDUCTOR COMPONENTS IND LLC0 citations51
US9923092B2Mar 20, 2018
Method of forming a semiconductor device
SEMICONDUCTOR COMPONENTS IND LLC1 citations51
US11289570B2Mar 29, 2022
Semiconductor device having optimized drain termination and method therefor
SEMICONDUCTOR COMPONENTS IND LLC0 citations50
US10818516B2Oct 27, 2020
Semiconductor device having biasing structure for self-isolating buried layer and method therefor
SEMICONDUCTOR COMPONENTS IND LLC0 citations50
US10497780B2Dec 3, 2019
Circuit and an electronic device including a transistor and a component and a process of forming the same
SEMICONDUCTOR COMPONENTS IND LLC0 citations50
AGAM MOSHE
4 patentsUS8530283B2Sep 10, 2013
Process for forming an electronic device including a nonvolatile memory structure having an antifuse component
AGAM MOSHE6 citations82
US8803282B2Aug 12, 2014
Electronic device including a nonvolatile memory structure having an antifuse component
AGAM MOSHE1 citations50
US8741697B2Jun 3, 2014
Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same
AGAM MOSHE0 citations45
US8724364B2May 13, 2014
Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same
AGAM MOSHE1 citations45