P

Inventor

AGAM MOSHE

US22 patents
⚠️ This page may combine multiple inventors who share the name “AGAM MOSHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SEMICONDUCTOR COMPONENTS IND LLC

14 patents
US10026728B1Jul 17, 2018

Semiconductor device having biasing structure for self-isolating buried layer and method therefor

SEMICONDUCTOR COMPONENTS IND LLC21 citations92
US10276556B2Apr 30, 2019

Semiconductor device having biasing structure for self-isolating buried layer and method therefor

SEMICONDUCTOR COMPONENTS IND LLC4 citations71
US10224323B2Mar 5, 2019

Isolation structure for semiconductor device having self-biasing buried layer and method therefor

SEMICONDUCTOR COMPONENTS IND LLC2 citations71
US10153213B2Dec 11, 2018

Process of forming an electronic device including a drift region, a sinker region and a resurf region

SEMICONDUCTOR COMPONENTS IND LLC3 citations68
US12125923B2Oct 22, 2024

High voltage diode on SOI substrate with trench-modified current path

SEMICONDUCTOR COMPONENTS IND LLC0 citations60
US10971632B2Apr 6, 2021

High voltage diode on SOI substrate with trench-modified current path

SEMICONDUCTOR COMPONENTS IND LLC0 citations60
US9478607B2Oct 25, 2016

Electronic device including an isolation structure

SEMICONDUCTOR COMPONENTS IND LLC2 citations59
US10896954B2Jan 19, 2021

Electronic device including a drift region

SEMICONDUCTOR COMPONENTS IND LLC0 citations57
US11251263B2Feb 15, 2022

Electronic device including a semiconductor body or an isolation structure within a trench

SEMICONDUCTOR COMPONENTS IND LLC0 citations55
US10490549B2Nov 26, 2019

Isolation structure for semiconductor device having self-biasing buried layer and method therefor

SEMICONDUCTOR COMPONENTS IND LLC0 citations51
US9923092B2Mar 20, 2018

Method of forming a semiconductor device

SEMICONDUCTOR COMPONENTS IND LLC1 citations51
US11289570B2Mar 29, 2022

Semiconductor device having optimized drain termination and method therefor

SEMICONDUCTOR COMPONENTS IND LLC0 citations50
US10818516B2Oct 27, 2020

Semiconductor device having biasing structure for self-isolating buried layer and method therefor

SEMICONDUCTOR COMPONENTS IND LLC0 citations50
US10497780B2Dec 3, 2019

Circuit and an electronic device including a transistor and a component and a process of forming the same

SEMICONDUCTOR COMPONENTS IND LLC0 citations50

AGAM MOSHE

4 patents

SEMICONDUCTOR COMPONENTS IND

2 patents

LATTICE SEMICONDUCTOR CORP

2 patents