Inventor

JANSSENS JOHAN CAMIEL JULIA

BE31 patents

⚠️ This page may combine multiple inventors who share the name “JANSSENS JOHAN CAMIEL JULIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JANSSENS JOHAN CAMIEL JULIA

SEMICONDUCTOR COMPONENTS IND LLC

Semiconductor device having biasing structure for self-isolating buried layer and method therefor

Semiconductor device having self-isolating bulk substrate and method therefor

Image sensors with vertically stacked photodiodes and vertical transfer gates

Image sensors with vertically stacked photodiodes and vertical transfer gates

Integrated circuit control of anti-series switches

Reducing MOSFET body current

Semiconductor device having self-isolating bulk substrate and method therefor

Semiconductor device having biasing structure for self-isolating buried layer and method therefor

Isolation structure for semiconductor device having self-biasing buried layer and method therefor

Methods and related systems of a readout circuit for use with a wheatstone bridge sensor

Method of forming a semiconductor device and circuit therefor

Image sensors with vertically stacked photodiodes and vertical transfer gates

Bidirectional leakage compensation circuits for use in integrated circuits and method therefor

Circuit that changes voltage of back electrode of transistor based on error condition

High voltage diode on SOI substrate with trench-modified current path

High voltage diode on SOI substrate with trench-modified current path

Electronic device including a semiconductor body or an isolation structure within a trench

Method of forming a semiconductor device and current sensing circuit therefor

Isolation structure for semiconductor device having self-biasing buried layer and method therefor

Controlling an output signal independently of the first harmonic

Reducing MOSFET body current

Electronic device including a HEMT with a segmented gate electrode

Semiconductor device having optimized drain termination and method therefor

Semiconductor device having biasing structure for self-isolating buried layer and method therefor

Circuit and an electronic device including a transistor and a component and a process of forming the same

HV MOS leakage compensation for ultralow current operation

Integrated floating diode structure and method therefor

Spread spectrum clock generator and method

Drive circuit and method

SEMICONDUCTOR COMPONENTS IND

Methods and systems of a rectifier circuit

AMI SEMICONDUCTOR BELGIUM BVBA

H-bridge utilizing intermediate switching phase(s)