Inventor
WANG KEJIA
CN25 patents
⚠️ This page may combine multiple inventors who share the name “WANG KEJIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
8 patentsUS9917195B2Mar 13, 2018
High doped III-V source/drain junctions for field effect transistors
IBM4 citations84
US9935201B2Apr 3, 2018
High doped III-V source/drain junctions for field effect transistors
IBM1 citations63
US9041141B2May 26, 2015
Structure and method of fabricating a CZTS photovoltaic device by electrodeposition
IBM3 citations63
US10355086B2Jul 16, 2019
High doped III-V source/drain junctions for field effect transistors
IBM0 citations52
US10256304B2Apr 9, 2019
High doped III-V source/drain junctions for field effect transistors
IBM0 citations52
US9935179B2Apr 3, 2018
Method for making semiconductor device with filled gate line end recesses
IBM0 citations52
US9620505B2Apr 11, 2017
Semiconductor device with different fin sets
IBM0 citations52
US8790956B2Jul 29, 2014
Structure and method of fabricating a CZTS photovoltaic device by electrodeposition
IBM0 citations52
ST MICROELECTRONICS INC
5 patentsUS9202919B1Dec 1, 2015
FinFETs and techniques for controlling source and drain junction profiles in finFETs
ST MICROELECTRONICS INC21 citations93
US9660057B2May 23, 2017
Method of forming a reduced resistance fin structure
ST MICROELECTRONICS INC8 citations84
US9653579B2May 16, 2017
Method for making semiconductor device with filled gate line end recesses
ST MICROELECTRONICS INC10 citations84
US9299721B2Mar 29, 2016
Method for making semiconductor device with different fin sets
ST MICROELECTRONICS INC14 citations84
US9318579B2Apr 19, 2016
Method for making a semiconductor device while avoiding nodules on a gate
ST MICROELECTRONICS INC1 citations52
GUO DECHAO
3 patentsUS8900935B2Dec 2, 2014
Deposition on a nanowire using atomic layer deposition
GUO DECHAO347 citations99
US8802482B2Aug 12, 2014
Method to fabricate multicrystal solar cell with light trapping surface using nanopore copolymer
GUO DECHAO4 citations73
US9437677B2Sep 6, 2016
Deposition on a nanowire using atomic layer deposition
GUO DECHAO2 citations63
GRAHAM WILLIAM
2 patentsGLOBALFOUNDRIES INC
2 patentsUS9299775B2Mar 29, 2016
Methods for the production of integrated circuits comprising epitaxially grown replacement structures
GLOBALFOUNDRIES INC7 citations82
US9275861B2Mar 1, 2016
Methods of forming group III-V semiconductor materials on group IV substrates and the resulting substrate structures
GLOBALFOUNDRIES INC1 citations52