Inventor
KUO YU-TSE
TW46 patents
⚠️ This page may combine multiple inventors who share the name “KUO YU-TSE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
45 patentsUS9728541B1Aug 8, 2017
Static random-access memory (SRAM) cell array and forming method thereof
UNITED MICROELECTRONICS CORP16 citations92
US9871048B1Jan 16, 2018
Memory device
UNITED MICROELECTRONICS CORP13 citations84
US9786647B1Oct 10, 2017
Semiconductor layout structure
UNITED MICROELECTRONICS CORP7 citations84
US9698047B2Jul 4, 2017
Dummy gate technology to avoid shorting circuit
UNITED MICROELECTRONICS CORP12 citations84
US9379119B1Jun 28, 2016
Static random access memory
UNITED MICROELECTRONICS CORP15 citations84
US9401366B1Jul 26, 2016
Layout pattern for 8T-SRAM and the manufacturing method thereof
UNITED MICROELECTRONICS CORP14 citations83
US9761302B1Sep 12, 2017
Static random access memory cell and manufacturing method thereof
UNITED MICROELECTRONICS CORP19 citations80
US10847521B2Nov 24, 2020
Layout pattern of a static random access memory
UNITED MICROELECTRONICS CORP4 citations73
US10068909B1Sep 4, 2018
Layout pattern of a memory device formed by static random access memory
UNITED MICROELECTRONICS CORP4 citations73
US10026726B2Jul 17, 2018
Dummy gate technology to avoid shorting circuit
UNITED MICROELECTRONICS CORP3 citations73
US9953988B2Apr 24, 2018
Method of forming static random-access memory (SRAM) cell array
UNITED MICROELECTRONICS CORP2 citations73
US9947674B2Apr 17, 2018
Static random-access memory (SRAM) cell array
UNITED MICROELECTRONICS CORP2 citations73
US11475953B1Oct 18, 2022
Semiconductor layout pattern and forming method thereof
UNITED MICROELECTRONICS CORP4 citations72
US10861549B1Dec 8, 2020
Ternary content addressable memory unit capable of reducing charge sharing effect
UNITED MICROELECTRONICS CORP3 citations72
US10706914B2Jul 7, 2020
Static random access memory
UNITED MICROELECTRONICS CORP5 citations72
US10559573B2Feb 11, 2020
Static random access memory structure
UNITED MICROELECTRONICS CORP5 citations72
US10529723B2Jan 7, 2020
Layout pattern for static random access memory
UNITED MICROELECTRONICS CORP6 citations72
US10366756B1Jul 30, 2019
Control circuit used for ternary content-addressable memory with two logic units
UNITED MICROELECTRONICS CORP2 citations72
US10153287B1Dec 11, 2018
Layout pattern for static random access memory
UNITED MICROELECTRONICS CORP6 citations72
US10381056B2Aug 13, 2019
Dual port static random access memory (DPSRAM) cell
UNITED MICROELECTRONICS CORP6 citations70
US12340830B2Jun 24, 2025
Spin-orbit torque magnetic random access memory circuit and layout thereof
UNITED MICROELECTRONICS CORP1 citations64
US9941288B2Apr 10, 2018
Static random-access memory (SRAM) cell array
UNITED MICROELECTRONICS CORP1 citations63
US11170854B2Nov 9, 2021
Layout pattern of two-port ternary content addressable memory
UNITED MICROELECTRONICS CORP0 citations62
US10892013B2Jan 12, 2021
Two-port ternary content addressable memory and layout pattern thereof, and associated memory device
UNITED MICROELECTRONICS CORP1 citations62
US10522551B2Dec 31, 2019
Semiconductor device and semiconductor apparatus
UNITED MICROELECTRONICS CORP1 citations62
US12349369B2Jul 1, 2025
Layout pattern of magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations61
US12063791B2Aug 13, 2024
Layout pattern of magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations61
US11943935B2Mar 26, 2024
Layout pattern of magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations61
US11915755B2Feb 27, 2024
Layout of semiconductor memory device
UNITED MICROELECTRONICS CORP0 citations61
US11489010B2Nov 1, 2022
Layout pattern of magnetoresistive random access memory
UNITED MICROELECTRONICS CORP0 citations61
US10978122B1Apr 13, 2021
Memory including non-volatile cells and current driving circuit
UNITED MICROELECTRONICS CORP0 citations60
US9166003B2Oct 20, 2015
Layout configuration for memory cell array
UNITED MICROELECTRONICS CORP2 citations59
US12148809B2Nov 19, 2024
Layout pattern of static random access memory
UNITED MICROELECTRONICS CORP0 citations52
US11475952B2Oct 18, 2022
Ternary content addressable memory and two-port static random access memory
UNITED MICROELECTRONICS CORP0 citations52
US10468420B2Nov 5, 2019
Method of forming static random-access memory (SRAM) cell array
UNITED MICROELECTRONICS CORP0 citations52
US10050046B2Aug 14, 2018
Static random-access memory (SRAM) cell array and forming method thereof
UNITED MICROELECTRONICS CORP1 citations52
US10050044B2Aug 14, 2018
Static random-access memory device
UNITED MICROELECTRONICS CORP0 citations52
US10020049B1Jul 10, 2018
Six-transistor static random access memory cell and operation method thereof
UNITED MICROELECTRONICS CORP0 citations52
US9859282B1Jan 2, 2018
Semiconductor structure
UNITED MICROELECTRONICS CORP1 citations52
US9799650B2Oct 24, 2017
Semiconductor layout structure
UNITED MICROELECTRONICS CORP0 citations52
US12224001B2Feb 11, 2025
Layout pattern of static random access memory and the forming method thereof
UNITED MICROELECTRONICS CORP0 citations51
US10410684B2Sep 10, 2019
Memory device with oxide semiconductor static random access memory and method for operating the same
UNITED MICROELECTRONICS CORP0 citations51
US10134449B2Nov 20, 2018
Semiconductor memory device
UNITED MICROELECTRONICS CORP0 citations41
US9947673B1Apr 17, 2018
Semiconductor memory device
UNITED MICROELECTRONICS CORP0 citations40
US10762951B1Sep 1, 2020
Static random access memory device with keeper circuit
UNITED MICROELECTRONICS CORP0 citations34