P

Inventor

KUO YU-TSE

TW46 patents
⚠️ This page may combine multiple inventors who share the name “KUO YU-TSE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

45 patents
US9728541B1Aug 8, 2017

Static random-access memory (SRAM) cell array and forming method thereof

UNITED MICROELECTRONICS CORP16 citations92
US9871048B1Jan 16, 2018

Memory device

UNITED MICROELECTRONICS CORP13 citations84
US9786647B1Oct 10, 2017

Semiconductor layout structure

UNITED MICROELECTRONICS CORP7 citations84
US9698047B2Jul 4, 2017

Dummy gate technology to avoid shorting circuit

UNITED MICROELECTRONICS CORP12 citations84
US9379119B1Jun 28, 2016

Static random access memory

UNITED MICROELECTRONICS CORP15 citations84
US9401366B1Jul 26, 2016

Layout pattern for 8T-SRAM and the manufacturing method thereof

UNITED MICROELECTRONICS CORP14 citations83
US9761302B1Sep 12, 2017

Static random access memory cell and manufacturing method thereof

UNITED MICROELECTRONICS CORP19 citations80
US10847521B2Nov 24, 2020

Layout pattern of a static random access memory

UNITED MICROELECTRONICS CORP4 citations73
US10068909B1Sep 4, 2018

Layout pattern of a memory device formed by static random access memory

UNITED MICROELECTRONICS CORP4 citations73
US10026726B2Jul 17, 2018

Dummy gate technology to avoid shorting circuit

UNITED MICROELECTRONICS CORP3 citations73
US9953988B2Apr 24, 2018

Method of forming static random-access memory (SRAM) cell array

UNITED MICROELECTRONICS CORP2 citations73
US9947674B2Apr 17, 2018

Static random-access memory (SRAM) cell array

UNITED MICROELECTRONICS CORP2 citations73
US11475953B1Oct 18, 2022

Semiconductor layout pattern and forming method thereof

UNITED MICROELECTRONICS CORP4 citations72
US10861549B1Dec 8, 2020

Ternary content addressable memory unit capable of reducing charge sharing effect

UNITED MICROELECTRONICS CORP3 citations72
US10706914B2Jul 7, 2020

Static random access memory

UNITED MICROELECTRONICS CORP5 citations72
US10559573B2Feb 11, 2020

Static random access memory structure

UNITED MICROELECTRONICS CORP5 citations72
US10529723B2Jan 7, 2020

Layout pattern for static random access memory

UNITED MICROELECTRONICS CORP6 citations72
US10366756B1Jul 30, 2019

Control circuit used for ternary content-addressable memory with two logic units

UNITED MICROELECTRONICS CORP2 citations72
US10153287B1Dec 11, 2018

Layout pattern for static random access memory

UNITED MICROELECTRONICS CORP6 citations72
US10381056B2Aug 13, 2019

Dual port static random access memory (DPSRAM) cell

UNITED MICROELECTRONICS CORP6 citations70
US12340830B2Jun 24, 2025

Spin-orbit torque magnetic random access memory circuit and layout thereof

UNITED MICROELECTRONICS CORP1 citations64
US9941288B2Apr 10, 2018

Static random-access memory (SRAM) cell array

UNITED MICROELECTRONICS CORP1 citations63
US11170854B2Nov 9, 2021

Layout pattern of two-port ternary content addressable memory

UNITED MICROELECTRONICS CORP0 citations62
US10892013B2Jan 12, 2021

Two-port ternary content addressable memory and layout pattern thereof, and associated memory device

UNITED MICROELECTRONICS CORP1 citations62
US10522551B2Dec 31, 2019

Semiconductor device and semiconductor apparatus

UNITED MICROELECTRONICS CORP1 citations62
US12349369B2Jul 1, 2025

Layout pattern of magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US12063791B2Aug 13, 2024

Layout pattern of magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US11943935B2Mar 26, 2024

Layout pattern of magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US11915755B2Feb 27, 2024

Layout of semiconductor memory device

UNITED MICROELECTRONICS CORP0 citations61
US11489010B2Nov 1, 2022

Layout pattern of magnetoresistive random access memory

UNITED MICROELECTRONICS CORP0 citations61
US10978122B1Apr 13, 2021

Memory including non-volatile cells and current driving circuit

UNITED MICROELECTRONICS CORP0 citations60
US9166003B2Oct 20, 2015

Layout configuration for memory cell array

UNITED MICROELECTRONICS CORP2 citations59
US12148809B2Nov 19, 2024

Layout pattern of static random access memory

UNITED MICROELECTRONICS CORP0 citations52
US11475952B2Oct 18, 2022

Ternary content addressable memory and two-port static random access memory

UNITED MICROELECTRONICS CORP0 citations52
US10468420B2Nov 5, 2019

Method of forming static random-access memory (SRAM) cell array

UNITED MICROELECTRONICS CORP0 citations52
US10050046B2Aug 14, 2018

Static random-access memory (SRAM) cell array and forming method thereof

UNITED MICROELECTRONICS CORP1 citations52
US10050044B2Aug 14, 2018

Static random-access memory device

UNITED MICROELECTRONICS CORP0 citations52
US10020049B1Jul 10, 2018

Six-transistor static random access memory cell and operation method thereof

UNITED MICROELECTRONICS CORP0 citations52
US9859282B1Jan 2, 2018

Semiconductor structure

UNITED MICROELECTRONICS CORP1 citations52
US9799650B2Oct 24, 2017

Semiconductor layout structure

UNITED MICROELECTRONICS CORP0 citations52
US12224001B2Feb 11, 2025

Layout pattern of static random access memory and the forming method thereof

UNITED MICROELECTRONICS CORP0 citations51
US10410684B2Sep 10, 2019

Memory device with oxide semiconductor static random access memory and method for operating the same

UNITED MICROELECTRONICS CORP0 citations51
US10134449B2Nov 20, 2018

Semiconductor memory device

UNITED MICROELECTRONICS CORP0 citations41
US9947673B1Apr 17, 2018

Semiconductor memory device

UNITED MICROELECTRONICS CORP0 citations40
US10762951B1Sep 1, 2020

Static random access memory device with keeper circuit

UNITED MICROELECTRONICS CORP0 citations34

CHUANG MENG-PING

1 patent