Inventor
GILES FREDERICK P
US7 patents
Patents
7 patentsUS6921697B2Jul 26, 2005
Method for making trench MIS device with reduced gate-to-drain capacitance
SILICONIX INC31 citations92
US6903412B2Jun 7, 2005
Trench MIS device with graduated gate oxide layer
SILICONIX INC21 citations92
US6882000B2Apr 19, 2005
Trench MIS device with reduced gate-to-drain capacitance
SILICONIX INC24 citations92
US6875657B2Apr 5, 2005
Method of fabricating trench MIS device with graduated gate oxide layer
SILICONIX INC17 citations92
US7012005B2Mar 14, 2006
Self-aligned differential oxidation in trenches by ion implantation
SILICONIX INC21 citations91
US6709930B2Mar 23, 2004
Thicker oxide formation at the trench bottom by selective oxide deposition
SILICONIX INC24 citations91
US6849898B2Feb 1, 2005
Trench MIS device with active trench corners and thick bottom oxide
SILICONIX INC11 citations73